초록 ▼

A circuit incorporated IGBT is provided with a semiconductor substrate having an IGBT area and a circuit area which are adjacent to each other. In a semiconductor layer of one conductivity type in which a circuit element is formed in the circuit area, there is provided another semiconductor layer of

A circuit incorporated IGBT is provided with a semiconductor substrate having an IGBT area and a circuit area which are adjacent to each other. In a semiconductor layer of one conductivity type in which a circuit element is formed in the circuit area, there is provided another semiconductor layer of another conductivity type which adjoins the circuit element and has an impurity concentration higher than that of the semiconductor layer of the one conductivity type. An electrode contacts the other semiconductor layer and is connected to an electrode of the IGBT. Carriers are ejected from the other semiconductor layer to the electrode of the IGBT, thereby making it possible to prevent an erroneous operation of the circuit.

대표청구항 ▼

1. A circuit incorporated IGBT comprising a semiconductor substrate having an IGBT area and a circuit area which are adjacent to each other, wherein:said IGBT area includes a first layer of one conductivity type extending to said circuit area, a second layer of another conductivity type adjoining th

1. A circuit incorporated IGBT comprising a semiconductor substrate having an IGBT area and a circuit area which are adjacent to each other, wherein:said IGBT area includes a first layer of one conductivity type extending to said circuit area, a second layer of another conductivity type adjoining the said first layer and extending to said circuit area, a third layer of the one conductivity type formed in said second layer, a fourth layer of the other conductivity type formed in said third layer, a first electrode formed through an insulating film on a surface of said third layer between said second layer and said fourth layer, a second electrode contacting said third layer and said fourth layer, and a third electrode contacting said first layer, said circuit area includes a fifth layer of the one conductivity type formed in a portion of said second layer extending from said IGBT area, a circuit element formed in said fifth layer, a sixth layer of the one conductivity type provided adjacent to said circuit element and in said fifth layer and having an impurity concentration higher than that of said fifth layer, a fourth electrode contacting said sixth layer, a seventh layer and an eighth layer of the other conductivity type formed in said fifth layer, said seventh layer and eighth layer being separated from said sixth layer, a fifth electrode formed through an insulating film on a surface of said fifth layer between said seventh layer and said between said seventh layer and said eighth layer and said circuit element includes a circuit element electrode separate from said second electrode and electrically connected to said second electrode through another circuit element, and said second electrode and said fourth electrode are electrically connected, wherein said circuit element electrode is a sixth electrode contacting said seventh layer, said another circuit element includes a resistor and said second electrode and said sixth electrode are electrically connected through said resistor.