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Apparatus for exposing a substrate to plasma radicals 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C23C-016/00
  • C23F-001/02
출원번호 US-0439476 (1999-11-12)
발명자 / 주소
  • David B. Noble
  • Ravi Jallepally
  • Nathan D'Astici
  • Gary Miner
  • Turgut Sahin
  • Guangcai Xing
  • Yashraj Bhatnagar
출원인 / 주소
  • Applied Materials, Inc.
대리인 / 주소
    Blakely, Sokoloff, Taylor & Zafman
인용정보 피인용 횟수 : 49  인용 특허 : 10

초록 ▼

An apparatus and method for exposing a substrate to plasma including a first reaction chamber adapted to generate a plasma comprising ions and radicals and a second reaction chamber coupled to the first reaction chamber and adapted to house a substrate at a sight in the second reaction chamber. The

대표청구항 ▼

1. An apparatus comprising:a first reaction chamber having an outlet; a gas source coupled to the first reaction chamber to supply a gas to the first reaction chamber comprising constituents adapted to react with a substrate in a process step; an excitation energy source coupled to the first reactio

이 특허에 인용된 특허 (10)

  1. Bhatnagar Yashraj K., Apparatus and method for efficient and compact remote microwave plasma generation.
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  2. Yamazaki Shunpei (Tokyo JPX), Conductive layer deposition method with a microwave enhanced CVD system.
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  3. Moslehi Mehrdad M. (Dallas TX), Low-temperature in-situ dry cleaning process for semiconductor wafer.
    상세보기
  4. Moslehi Mehrdad M. (Dallas TX), Plasma density controller for semiconductor device processing equipment.
    상세보기
  5. Matsuo Seitaro (Hachioji JPX) Yoshihara Hideo (Sekimachi JPX) Yamazaki Shinichi (Chofu JPX), Plasma deposition apparatus.
    상세보기
  6. Yashima Koji (Suwa JPX), Plasma treatment apparatus and method.
    상세보기
  7. Fisher Wayne G. (Allen TX), Processing apparatus for wafers.
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  8. Fujishiro Felix (San Antonio TX) Lee Chang-Ou (San Antonio TX) Vines Landon (Boise ID), Rapid thermal oxidation of silicon in an ozone ambient.
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  9. Fong Gary ; Silvestre Irwin ; Truong Quoc, Resonant chamber applicator for remote plasma source.
    상세보기
  10. Davis Cecil J. (Greenville TX) Jucha Rhett B. (Celeste TX) Luttmer Joseph D. (Richardson TX) York Rudy L. (Plano TX) Loewenstein Lee M. (Plano TX) Matthews Robert T. (Plano TX) Hildenbrand Randall C., Wafer processing apparatus having independently controllable energy sources.
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이 특허를 인용한 특허 (49)

  1. Moore, John T.; DeBoer, Scott J., Capacitors.
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  2. Moore,John T.; DeBoer,Scott J., Capacitors, methods of forming capacitors, and methods of forming capacitor dielectric layers.
    상세보기
  3. Chen, Chia-Lin; Lee, Tze Liang; Chen, Shih-Chang, Device performance improvement by heavily doped pre-gate and post polysilicon gate clean.
    상세보기
  4. Kraus, Joseph Arthur; Strassner, James David, Dual wafer load lock.
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  5. Chan, Michael; Bristol, Robert; Doczy, Mark, In-situ cleaning of light source collector optics.
    상세보기
  6. Chan,Michael; Bristol,Robert; Doczy,Mark, In-situ cleaning of light source collector optics.
    상세보기
  7. Sugawara, Takuya; Ozaki, Shigenori; Sasaki, Masaru, Material for electronic device and process for producing the same.
    상세보기
  8. Rogers, Matthew S.; Curtis, Roger; Hawrylchak, Lara; Lai, Ken Kaung; Hwang, Bernard L.; Tobin, Jeffrey; Olsen, Christopher; Bevan, Malcolm J., Method and apparatus for selective nitridation process.
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  9. Burnham, Jay S.; Nakos, James S.; Quinlivan, James J.; Roque, Jr., Bernie; Shank, Steven M.; Ward, Beth A., Method for fabricating a nitrided silicon-oxide gate dielectric.
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  10. Burnham,Jay S.; Nakos,James S.; Quinlivan,James J.; Roque, Jr.,Bernie A.; Shank,Steven M.; Ward,Beth A., Method for fabricating a nitrided silicon-oxide gate dielectric.
    상세보기
  11. Cho, Byoung Hee, Method for forming gate oxide in semiconductor device.
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  12. Reid, Kimberly G.; Dip, Anthony, Method for growing a thin oxynitride film on a substrate.
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  13. Reid, Kimberly G.; Dip, Anthony, Method for growing an oxynitride film on a substrate.
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  14. Kula, Witold, Method for oxidizing a metal layer.
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  15. Dip, Anthony, Method for replacing a nitrous oxide based oxidation process with a nitric oxide based oxidation process for substrate processing.
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  16. Moore, John T.; DeBoer, Scott J., Method of forming a capacitor dielectric layer.
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  17. Sandhu, Gurtej S.; Moore, John T.; Rueger, Neal R., Method of forming a nitrogen-enriched region within silicon-oxide-containing masses.
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  18. Beaman, Kevin L.; Moore, John T., Method of forming a structure over a semiconductor substrate.
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  19. Beaman, Kevin L.; Moore, John T., Method of forming a structure over a semiconductor substrate.
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  20. Beaman,Kevin L.; Moore,John T., Method of forming a structure over a semiconductor substrate.
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  21. You,Young Sub; Yang,Cheol Kyu; Lee,Woong; Lee,Jae Chul; Leam,Hun Hyeoung, Method of forming silicon oxynitride layer in semiconductor device and apparatus of forming the same.
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  22. Moore, John T., Method of forming transistors associated with semiconductor substrates comprising forming a nitrogen-comprising region across an oxide region of a transistor gate.
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  23. Tjandra, Agus; Olsen, Christopher S.; Swenberg, Johanes; Hawrylchak, Lara, Methods and apparatus for selective oxidation of a substrate.
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  24. Tjandra, Agus; Olsen, Christopher S.; Swenberg, Johanes; Hawrylchak, Lara, Methods and apparatus for selective oxidation of a substrate.
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  25. Tjandra, Agus S.; Olsen, Christopher S.; Swenberg, Johanes F.; Yokota, Yoshitaka, Methods for forming conformal oxide layers on semiconductor devices.
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  26. Rogers, Matthew S.; Bautista, Kevin, Methods for forming layers on semiconductor substrates.
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  27. Kher, Shreyas S.; Narwankar, Pravin K.; Ahmed, Khaled Z.; Ma, Yi, Methods for manufacturing high dielectric constant film.
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  28. Sandhu,Gurtej S.; Moore,John T.; Rueger,Neal R., Methods of forming a nitrogen enriched region.
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  29. Moore, John T.; DeBoer, Scott J., Methods of forming capacitors.
    상세보기
  30. Eppich,Denise M.; Beaman,Kevin L., Methods of forming capacitors and methods of forming capacitor dielectric layers.
    상세보기
  31. Moore, John T., Methods of forming dielectric materials and methods of processing semiconductor substrates.
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  32. Moore, John T., Methods of forming oxide regions over semiconductor substrates.
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  33. Beaman, Kevin L.; Moore, John T., Methods of forming structures over semiconductor substrates, and methods of forming transistors associated with semiconductor substrates.
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  34. Beaman,Kevin L.; Moore,John T., Methods of forming transistors.
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  35. Moore, John T., Methods of forming transistors associated with semiconductor substrates.
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  36. Sandhu, Gurtej S.; Moore, John T.; Rueger, Neal R., Methods of incorporating nitrogen into silicon-oxide-containing layers.
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  37. Gurba,April; Alshareef,Husam; Niimi,Hiroaki, Monitoring of nitrided oxide gate dielectrics by determination of a wet etch.
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  38. Huang, Mengbing; Spratt, William T., Optical barriers, waveguides, and methods for fabricating barriers and waveguides for use in harsh environments.
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  39. Ma, Kai; Olsen, Christopher S.; Yokota, Yoshitaka, Post treatment methods for oxide layers on semiconductor devices.
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  40. Yamaguchi,Masonori; Yoshioka,Masaki, Processor and method for processing.
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  41. Beaman, Kevin L.; Moore, John T., Semiconductor assemblies, methods of forming structures over semiconductor substrates, and methods of forming transistors associated with semiconductor substrates.
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  42. Moore,John T., Semiconductor constructions.
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  43. Chen, Chia-Lin; Lee, Tze-Liang; Chen, Shih-Chang, Semiconductor wafer manufacturing methods employing cleaning delay period.
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  44. Su, Chin-Ta, Single chip pad oxide layer growth process.
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  45. Nakanishi,Toshio; Sugawara,Takuya; Matsuyama,Seiji; Sasaki,Masaru, Substrate processing method and material for electronic device.
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  46. Lee,Chung J.; Kumar,Atul; Chen,Chieh; Pikovsky,Yuri, System for forming composite polymer dielectric film.
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  47. Moore, John T., Transistor devices.
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  48. Sandhu,Gurtej S.; Moore,John T.; Rueger,Neal R., Transistor structures.
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  49. Sandhu, Gurtej S.; Moore, John T.; Rueger, Neal R., Transistor structures, methods of incorporating nitrogen into silicon-oxide-containing layers; and methods of forming transistors.
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