[특허]Method and apparatus for fabricating high quality single crystal

Method and apparatus for fabricating high quality single crystal 원문보기

IPC분류정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	C30B-029/36
출원번호	US-0686232 (2000-10-12)
우선권정보	JP-0294468 (1999-10-15); JP-0294471 (1999-10-15)
발명자 / 주소	Kazukuni Hara JP Kouki Futatsuyama JP Shoichi Onda JP Fusao Hirose JP Emi Oguri JP Naohiro Sugiyama JP Atsuto Okamoto JP
출원인 / 주소	Denso Corporation JP
대리인 / 주소	Law Offices of David G. Posz
인용정보	피인용 횟수 : 14 인용 특허 : 11

초록 ▼

A crucible for growing a single crystal therein has a seed crystal attachment portion and a peripheral portion surrounding the seed crystal attachment portion through a gap provided therebetween. The seed crystal attachment portion has a support surface for holding a seed crystal on which the single crystal is to be grown, and the support surface is recessed from a surface of the peripheral portion. The seed crystal is attached to the support surface to cover an entire area of the support surface. Accordingly, no poly crystal is formed on the seed crystal attachment portion, and the single crystal can be grown on the seed crystal with high quality.

대표청구항 ▼

1. A method for fabricating a single crystal, comprising:preparing a vessel defining therein a growth space and having a seed crystal attachment portion, and a peripheral portion surrounding the seed crystal attachment portion, the seed crystal attachment portion having a support surface exposed to the growth space and recessed from a peripheral surface of the peripheral portion; attaching a seed crystal to the support surface of the seed crystal attachment portion such that the seed crystal covers an entire area of the support surface and is surrounded by the peripheral surface of the peripheral portion; and growing a single crystal on a growth surface of the seed crystal and a poly crystal on the peripheral surface of the peripheral portion by introducing a material gas within the growth space of the vessel, the single crystal being grown to have a height approximately equal to a height of the poly crystal.

이 특허에 인용된 특허 (11)

Balakrishna Vijay ; Augustine Godfrey ; Gaida Walter E. ; Thomas R. Noel ; Hopkins Richard H., Advanced physical vapor transport method and apparatus for growing high purity single crystal silicon carbide.
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Kordina Olle,SEX ; Hallin Christer,SEX ; Janzen Erik,SEX, Device and a method for epitaxially growing objects by CVD.
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Kordina Olle,SEX ; Hermansson Willy,SEX ; Tuominen Marko,SEX, Device for heat treatment of objects and a method for producing a susceptor.
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Balakrishna Vijay ; Thomas R. Noel ; Augustine Godfrey ; Hopkins Richard H. ; Hobgood H. McDonald, Method and apparatus for growing high purity single crystal silicon carbide.
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Shiomi Hiromu,JPX ; Nishino Shigehiro,JPX, Method of making SiC single crystal and apparatus for making SiC single crystal.
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Furukawa Katsuki (Sakai JPX) Tajima Yoshimitsu (Nara JPX) Suzuki Akira (Nara JPX), Method of producing silicon-carbide single crystals by sublimation recrystallization process using a seed crystal.
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Kito Yasuo,JPX ; Kotanshi Youichi,JPX ; Onda Shoichi,JPX ; Hanazawa Tatuyuki,JPX ; Kitaoka Eiji,JPX, Method of producing single-crystal silicon carbide.
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Kitoh Yasuo,JPX ; Suzuki Masahiko,JPX ; Sugiyama Naohiro,JPX, Process for growing single crystal.
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Kanemoto Masashi,JPX ; Endo Shinobu,JPX ; Hashimoto Masao,JPX, Process for producing high purity silicon carbide powder for preparation of a silicon carbide single crystal and single.
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Takahaski Jun (Sagamihara JPX) Kanaya Masatoshi (Sagamihara JPX), Sublimation growth of single crystal SiC.
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Davis Robert F. (Raleigh NC) Carter ; Jr. Calvin H. (Raleigh NC) Hunter Charles E. (Durham NC), Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide.
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이 특허를 인용한 특허 (14)

Kato,Tomohisa; Nishizawa,Shinichi; Hirose,Fusao, Apparatus for manufacturing single crystal.
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Katsuno, Masakazu; Fujimoto, Tatsuo; Tsuge, Hiroshi; Nakabayashi, Masashi, Crucible vessel and crucible cover having grooves for producing single-crystal silicon carbide, production apparatus and method.
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Hara,Kazukuni; Nagakubo,Masao; Onda,Shoichi, Manufacturing method for producing silicon carbide crystal using source gases.
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Hara, Kazukuni; Nagakubo, Masao; Onda, Shoichi, Manufacturing method for producing silicon carbide crystal using source gases and apparatus for the same.
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Kato,Tomohisa; Nishizawa,Shinichi; Hirose,Fusao, Method and apparatus for manufacturing single crystal.
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Kondo, Hiroyuki; Oguri, Emi; Hirose, Fusao; Nakamura, Daisuke; Okamoto, Atsuto; Sugiyama, Naohiro, Method and apparatus for producing single crystal, substrate for growing single crystal and method for heating single crystal.
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Jenny, Jason Ronald; Malta, David Phillip; Hobgood, Hudson McDonald; Mueller, Stephan; Tsvetkov, Valeri F., Method for producing semi-insulating resistivity in high purity silicon carbide crystals.
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Leonard, Robert Tyler; Powell, Adrian; Tsvetkov, Valeri F., Method of producing high quality silicon carbide crystal in a seeded growth system.
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Jenny, Jason Ronald; Malta, David Phillip; Hobgood, Hudson McDonald; Mueller, Stephan Georg; Brady, Mark; Leonard, Robert Tyler; Powell, Adrian; Tsvetkov, Valerl F., One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer.
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Jenny, Jason Ronald; Malta, David Phillip; Hobgood, Hudson McDonald; Mueller, Stephan Georg; Brady, Mark; Leonard, Robert Tyler; Powell, Adrian; Tsvetkov, Valeri F., One hundred millimeter single crystal silicon carbide wafer.
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Chen, Xiaolong; Wang, Bo; Li, Longyuan; Peng, Tonghua; Liu, Chunjun; Wang, Wenjun; Wang, Gang, Process for growing silicon carbide single crystal by physical vapor transport method and annealing silicon carbide single crystal in situ.
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Leonard, Robert Tyler; Powell, Adrian; Tsvetkov, Valeri F., Producing high quality bulk silicon carbide single crystal by managing thermal stresses at a seed interface.
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Sasaki, Makoto, Silicon carbide substrate, silicon carbide ingot, and methods for manufacturing silicon carbide substrate and silicon carbide ingot.
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Sasaki, Makoto, Silicon carbide substrate, silicon carbide ingot, and methods for manufacturing silicon carbide substrate and silicon carbide ingot.
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IPC	Description
A	생활필수품
A62	인명구조; 소방(사다리 E06C)
A62B	인명구조용의 기구, 장치 또는 방법(특히 의료용에 사용되는 밸브 A61M 39/00; 특히 물에서 쓰이는 인명구조 장치 또는 방법 B63C 9/00; 잠수장비 B63C 11/00; 특히 항공기에 쓰는 것, 예. 낙하산, 투출좌석 B64D; 특히 광산에서 쓰이는 구조장치 E21F 11/00)
A62B-1/08	.. 윈치 또는 풀리에 제동기구가 있는 것

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Method and apparatus for fabricating high quality single crystal 원문보기