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[미국특허] Externally excited torroidal plasma source using a gas distribution plate 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C23C-016/00
  • H05H-001/00
출원번호 US-0636700 (2000-08-11)
발명자 / 주소
  • Hiroji Hanawa
  • Yan Ye
  • Kenneth S Collins
  • Kartik Ramaswamy
  • Andrew Nguyen
  • Tsutomu Tanaka
출원인 / 주소
  • Applied Materials Inc.
대리인 / 주소
    Michaelson and Wallace
인용정보 피인용 횟수 : 46  인용 특허 : 28

초록 ▼

A plasma chamber defining an evacuated interior environment for processing a substrate includes a substrate support, an apertured gas distribution plate in spaced facing relationship to the substrate support, and adapted to flow process gases into the chamber interior environment adjacent the substr

대표청구항 ▼

1. A plasma chamber defining an evacuated interior environment for processing a substrate, said chamber comprising:a substrate support; an apertured gas distribution plate in spaced facing relationship to the substrate support, and adapted to flow process gases into the chamber interior environment

이 특허에 인용된 특허 (28) 인용/피인용 타임라인 분석

  1. Harada Shigeru (Itami JPX) Noguchi Takeshi (Itami JPX) Mochizuki Hiroshi (Itami JPX), Apparatus for forming a thin film.
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  2. Ogle John S. (1472 Pashote Ct. Milpitas CA 95035), Apparatus for producing planar plasma using varying magnetic poles.
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  3. Shan Hongching ; Herchen Harald ; Welch Michael, Distributed microwave plasma reactor for semiconductor processing.
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  4. Ghanbari Ebrahim (Huntington NY), Electron cyclotron resonance plasma source.
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  5. Goins James R. (Lake Jackson TX) Ogle John W. (Lake Jackson TX) Ogle James R. (Lake Jackson TX), Fluid relief device.
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  6. Ogle John S. (1472 Pashote Ct. Milpitas CA 95035), High voltage oscilloscope probe with wide frequency response.
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  7. Dalvie Manoj (Katonah NY) Hamaguchi Satoshi (White Plains NY), High-density plasma-processing tool with toroidal magnetic field.
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  8. Reinberg Alan R. (Westport CT) Steinberg George N. (Westport CT) Zarowin Charles B. (Rowayton CT), Inductively coupled discharge for plasma etching and resist stripping.
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  9. Collison Wenli Z. ; Barnes Michael S. ; Ni Tuqiang Q. ; Berney Butch ; Vereb Wayne W. ; McMillin Brian K., Inductively coupled plasma downstream strip module.
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  10. Murzin Ivan Herman ; Ramamurthi Ram K., Inductively coupled plasma powder vaporization for fabricating integrated circuits.
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  11. Bayer Robert (West Milford NJ) Lantsman Alexander D. (Middletown NY) Seirmarco James A. (Buchanan NY), Inductively coupled plasma sputter chamber with conductive material sputtering capabilities.
    상세보기
  12. Donohoe Kevin G. ; Blalock Guy T., Method and apparatus for controlling the temperature of a gas distribution plate in a process reactor.
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  13. Ogle John S. (1472 Pashote Ct. Milpitas CA 95035), Method and apparatus for producing low pressure planar plasma using a coil with its axis parallel to the surface of a co.
    상세보기
  14. Ogle John S. (Milpitas CA), Method and apparatus for producing magnetically-coupled planar plasma.
    상세보기
  15. Zarowin Charles B. (Rowayton CT) Bollinger L. David (Ridgefield CT), Methods and apparatus for generating a plasma for “downstream”rapid shaping of surfaces of substrates and films.
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  16. Ogle John Seldon, Noninvasive blood flow sensor using magnetic field parallel to skin.
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  17. Borden Michael (Brookfield CT) Daniell Keith (East Norwalk CT) Magida Matthew (Monroe CT) Zarowin Charles (Rowayton CT), Plasma assisted oxidation of perovskites for forming high temperature superconductors using inductively coupled discharg.
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  18. Shan Hongching (San Jose CA), Plasma reactor with programmable reactant gas distribution.
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  19. Ogle John Seldon, Plasma source with process nonuniformity improved using ferromagnetic cores.
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  20. Kawakami Satoru (Sagamihara JPX) Suzuki Tsuyoshi (Kawasaki JPX) Arami Junichi (Tokyo-To JPX) Deguchi Yoichi (Machida JPX), Plasma treatment apparatus.
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  21. Shun'ko Evgeny V., RF plasma inductor with closed ferrite core.
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  22. Barnes Mike ; Ishikawa Tetsuya ; Niazi Kaveh ; Tanaka Tsutomu, RF plasma source for material processing.
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  23. Moore James A., Self isolating high frequency saturable reactor.
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  24. Ogle John (Milpitas CA) Yin Gerald Z. (San Jose CA), Split-phase driver for plasma etch system.
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  25. Lane Barton G. (Belmont MA) Sawin Herbert H. (Lexington MA) Smatlak Donna L. (Arlington MA), Toroidal electron cyclotron resonance reactor.
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  26. Smith Donald K. ; Chen Xing ; Holber William M. ; Georgelis Eric, Toroidal low-field reactive gas source.
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  27. Ogle John Seldon, Varying multipole plasma source.
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  28. Hong Liubo ; Forster John ; Fu Jianming, Wafer bias ring in a sustained self-sputtering reactor.
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이 특허를 인용한 특허 (46) 인용/피인용 타임라인 분석

  1. Sorensen, Carl A., Apparatus and methods for using high frequency chokes in a substrate deposition apparatus.
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  2. Hanawa,Hiroji; Tanaka,Tsutomu; Collins,Kenneth S.; Al Bayati,Amir; Ramaswamy,Kartik; Nguyen,Andrew, Chemical vapor deposition plasma process using an ion shower grid.
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  3. Hanawa,Hiroji; Tanaka,Tsutomu; Collins,Kenneth S.; Al Bayati,Amir; Ramaswamy,Kartik; Nguyen,Andrew, Chemical vapor deposition plasma process using plural ion shower grids.
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  4. Hanawa, Hiroji; Tanaka, Tsutomu; Collins, Kenneth S.; Al-Bayati, Amir; Ramaswamy, Kartik; Nguyen, Andrew, Chemical vapor deposition plasma reactor having plural ion shower grids.
    상세보기
  5. Ramaswamy,Kartik; Hanawa,Hiroji; Gallo,Biagio; Collins,Kenneth S; Ma,Kai; Parihar,Vijay; Jennings,Dean; Mayur,Abhilash J.; Al Bayati,Amir; Nguyen,Andrew, Copper barrier reflow process employing high speed optical annealing.
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  6. Ramaswamy,Kartik; Hanawa,Hiroji; Gallo,Biagio; Collins,Kenneth S.; Ma,Kai; Parihar,Vijay; Jennings,Dean; Mayur,Abhilash J.; Al Bayati,Amir; Nguyen,Andrew, Copper conductor annealing process employing high speed optical annealing with a low temperature-deposited optical absorber layer.
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  7. Ito,Hiroyuki; Matsunaga,Yasuhiko; Hanawa,Hiroji, Electron flood apparatus and ion implantation system.
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  8. Hanawa,Hiroji; Collins,Kenneth S; Ramaswamy,Kartik; Nguyen,Andrew; Tanaka,Tsutomu; Ye,Yan, Externally excited torroidal plasma source.
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  9. Maydan, Dan; Thakur, Randir P. S.; Collins, Kenneth S.; Al-Bayati, Amir; Hanawa, Hiroji; Ramaswamy, Kartik; Gallo, Biagio; Nguyen, Andrew, Fabrication of silicon-on-insulator structure using plasma immersion ion implantation.
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  10. Pak, Samuel S.; Lee, Sang In; Lee, Daniel Ho; Yang, Hyoseok Daniel, Gas injection plate.
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  11. Pak, Samuel S.; Lee, Sang In; Lee, Daniel Ho; Yang, Hyoseok Daniel, Gas tube assembly.
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  12. Buchberger, Jr.,Douglas A.; Hoffman,Daniel J.; Ramaswamy,Kartik; Nguyen,Andrew; Hanawa,Hiorji; Collins,Kenneth S.; Al Bayati,Amir, Gasless high voltage high contact force wafer contact-cooling electrostatic chuck.
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  13. Hanawa, Hiroji; Collins, Kenneth S.; Trow, John R.; Stover, David; Silveira, Fernando, High-frequency electrostatically shielded toroidal plasma and radical source.
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  14. Pan, Shaoher X.; Hanawa, Hiroji; Forster, John C.; Chen, Fusen, Inductive plasma loop enhancing magnetron sputtering.
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  15. Kabansky, Alex, Integrated circuit fabrication dual plasma process with separate introduction of different gases into gas flow.
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  16. Hanawa,Hiroji; Ramaswamy,Kartik; Collins,Kenneth S.; Al Bayati,Amir; Gallo,Biagio; Nguyen,Andrew, Low temperature CVD process with selected stress of the CVD layer on CMOS devices.
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  17. Ramaswamy,Kartik; Hanawa,Hiroji; Gallo,Biagio; Collins,Kenneth S.; Ma,Kai; Parihar,Vijay; Jennings,Dean; Mayur,Abhilash J.; Al Bayati,Amir; Nguyen,Andrew, Low temperature plasma deposition process for carbon layer deposition.
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  18. Boughton, Daniel Robert; Jarvis, Scott Michael, Method and apparatus for adding thermal energy to a glass melt.
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  19. Al Bayati,Amir; Roberts,Rick J.; Collins,Kenneth S.; MacWilliams,Ken; Hanawa,Hiroji; Ramaswamy,Kartik; Gallo,Biagio; Nguyen,Andrew, Method for ion implanting insulator material to reduce dielectric constant.
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  20. Boughton, Daniel Robert, Methods and apparatus for material processing using atmospheric thermal plasma reactor.
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  21. Boughton, Daniel Robert, Methods and apparatus for material processing using atmospheric thermal plasma reactor.
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  22. Boughton, Daniel Robert, Methods and apparatus for material processing using dual source cyclonic plasma reactor.
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  23. Boughton, Daniel Robert, Methods and apparatus for material processing using plasma thermal source.
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  24. Nguyen,Andrew; Hanawa,Hiroji; Collins,Kenneth S.; Ramaswamy,Kartik; Al Bayati,Amir; Gallo,Biagio, O-ringless tandem throttle valve for a plasma reactor chamber.
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  25. Collins,Kenneth S.; Hanawa,Hiroji; Ramaswamy,Kartik; Nguyen,Andrew; Al Bayati,Amir; Gallo,Biagio; Monroy,Gonzalo Antonio, Plasma immersion ion implantation apparatus including a plasma source having low dissociation and low minimum plasma voltage.
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  26. Collins,Kenneth S.; Hanawa,Hiroji; Ramaswamy,Kartik; Nguyen,Andrew; Al Bayati,Amir; Gallo,Biagio, Plasma immersion ion implantation process.
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  27. Collins,Kenneth S.; Hanawa,Hiroji; Ramaswamy,Kartik; Nguyen,Andrew; Al Bayati,Amir; Gallo,Biagio, Plasma immersion ion implantation process.
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  28. Collins,Kenneth S.; Hanawa,Hiroji; Ramaswamy,Kartik; Nguyen,Andrew; Al Bayati,Amir; Gallo,Biagio, Plasma immersion ion implantation process.
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  29. Collins,Kenneth S.; Hanawa,Hiroji; Ramaswamy,Kartik; Nguyen,Andrew; Al Bayati,Amir; Gallo,Biagio; Monroy,Gonzalo Antonio, Plasma immersion ion implantation process using a capacitively couple plasma source having low dissociation and low minimum plasma voltage.
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  30. Collins,Kenneth S.; Hanawa,Hiroji; Ramaswamy,Kartik; Nguyen,Andrew; Al Bayati,Amir; Gallo,Biagio; Monroy,Gonzalo Antonio, Plasma immersion ion implantation process using a capacitively coupled plasma source having low dissociation and low minimum plasma voltage.
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  31. Collins, Kenneth S.; Hanawa, Hiroji; Ramaswamy, Kartik; Nguyen, Andrew; Al-Bayati, Amir; Gallo, Biagio; Monroy, Gonzalo Antonio, Plasma immersion ion implantation process using a plasma source having low dissociation and low minimum plasma voltage.
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  32. Collins,Kenneth S.; Hanawa,Hiroji; Ramaswamy,Kartik; Nguyen,Andrew; Al Bayati,Amir; Gallo,Biagio; Monroy,Gonzalo Antonio, Plasma immersion ion implantation process using an inductively coupled plasma source having low dissociation and low minimum plasma voltage.
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  33. Hanawa, Hiroji; Tanaka, Tsutomu; Collins, Kenneth S.; Al-Bayati, Amir; Ramaswamy, Kartik; Nguyen, Andrew, Plasma immersion ion implantation reactor having an ion shower grid.
    상세보기
  34. Hanawa, Hiroji; Tanaka, Tsutomu; Collins, Kenneth S.; Al-Bayati, Amir; Ramaswamy, Kartik; Nguyen, Andrew, Plasma immersion ion implantation reactor having multiple ion shower grids.
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  35. Collins,Kenneth S.; Hanawa,Hiroji; Ramaswamy,Kartik; Nguyen,Andrew; Al Bayati,Amir; Gallo,Biagio; Monroy,Gonzalo Antonio, Plasma immersion ion implantation system including a plasma source having low dissociation and low minimum plasma voltage.
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  36. Lubomirsky, Dmitry; Yang, Jang-Gyoo; Miller, Matthew; Pinson, Jay; Chuc, Kien, Plasma source design.
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  37. Lubomirsky, Dmitry; Yang, Jang-Gyoo; Miller, Matthew; Pinson, Jay; Chuc, Kien, Plasma source design.
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  38. Beckmann, Rudolf; Fuhr, Markus; Zultzke, Walter; Weinrich, Werner, Plasma source with reliable ignition.
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  39. Ramaswamy,Kartik; Hanawa,Hiroji; Gallo,Biagio; Collins,Kenneth S.; Ma,Kai; Parihar,Vijay; Jennings,Dean; Mayur,Abhilash J.; Al Bayati,Amir; Nguyen,Andrew, Process for low temperature plasma deposition of an optical absorption layer and high speed optical annealing.
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  40. Collins, Kenneth S.; Hanawa, Hiroji; Ramaswamy, Kartik; Al-Bayati, Amir; Nguyen, Andrew; Gallo, Biagio, RF measurement feedback control and diagnostics for a plasma immersion ion implantation reactor.
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  41. Ramaswamy,Kartik; Hanawa,Hiroji; Gallo,Biagio; Collins,Kenneth S.; Ma,Kai; Parihar,Vijay; Jennings,Dean; Mayur,Abhilash J.; Al Bayati,Amir; Nguyen,Andrew, Semiconductor junction formation process including low temperature plasma deposition of an optical absorption layer and high speed optical annealing.
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  42. Al Bayati,Amir; Collins,Kenneth S.; Hanawa,Hiroji; Ramaswamy,Kartik; Gallo,Biagio; Nguyen,Andrew, Semiconductor on insulator vertical transistor fabrication and doping process.
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  43. Ramaswamy,Kartik; Hanawa,Hiroji; Gallo,Biagio; Collins,Kenneth S.; Ma,Kai; Parihar,Vijay; Jennings,Dean; Mayur,Abhilash J.; Al Bayati,Amir; Nguyen,Andrew, Semiconductor substrate process using a low temperature deposited carbon-containing hard mask.
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  44. Ramaswamy,Kartik; Hanawa,Hiroji; Gallo,Biagio; Collins,Kenneth S.; Ma,Kai; Parihar,Vijay; Jennings,Dean; Mayur,Abhilash J.; Al Bayati,Amir; Nguyen,Andrew, Semiconductor substrate process using an optically writable carbon-containing mask.
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  45. Al Bayati,Amir; Collins,Kenneth S.; Hanawa,Hiroji; Ramaswamy,Kartik; Gallo,Biagio; Nguyen,Andrew, Silicon-on-insulator wafer transfer method using surface activation plasma immersion ion implantation for wafer-to-wafer adhesion enhancement.
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  46. Hanawa,Hiroji; Ramaswamy,Kartik; Collins,Kenneth S.; Al Bayati,Amir; Gallo,Biagio; Nguyen,Andrew, Very low temperature CVD process with independently variable conformality, stress and composition of the CVD layer.
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