초록 ▼

An optical structure and a method of manufacturing a laser diode chip. The optical structure includes a silicon substrate, an optical fiber fixed to that substrate, and a laser diode chip. Grooves are formed in the optical fiber and the laser diode chip. Those grooves are used for aligning and posit

An optical structure and a method of manufacturing a laser diode chip. The optical structure includes a silicon substrate, an optical fiber fixed to that substrate, and a laser diode chip. Grooves are formed in the optical fiber and the laser diode chip. Those grooves are used for aligning and positioning the optical fiber relative to the laser diode chip. The laser diode chip is manufactured by vapor-depositing a nitride thin film (Si3N4) on a laminated wafer comprised of n-type InP layers, p-type Inp layers, and InGaAs layer. Then, etching an InGaAs layer using a solution of sulfuric acid, hydrogen peroxide, and distilled water after opening an etching window to form a V-mesa and V-grooves; etching an InP layer using a hydrochloric acid solution; vapor-depositing a nitride thin film (SiNx), opening an electrode forming window to form electrodes on the wafer, and forming p-type and n-type electrodes the wafer.

대표청구항 ▼

1. An optical transmitting module consisting of a silicon substrate, an optical fiber fixed to the substrate and a laser diode chip, with a first fixing groove for supporting and fixing the optical fiber, with a second fixing groove for supporting and fixing the laser diode chip and with a mediating

1. An optical transmitting module consisting of a silicon substrate, an optical fiber fixed to the substrate and a laser diode chip, with a first fixing groove for supporting and fixing the optical fiber, with a second fixing groove for supporting and fixing the laser diode chip and with a mediating groove for positioning the optical fiber and the laser diode chip at a definite distance, said mediating groove being formed between the first and the second groove, wherein all grooves are formed on the top side of said substrate, wherein the first and the second fixing groove are each formed in predetermined depths on the top side of the substrate such that a central axis of the optical fiber aligns with a center of an optical beam from a laser diode chip, wherein the optical fiber and the laser diode chip are received in the first and the second grooves such that mutual positions of the optical fiber and of the laser diode chip are determined by seating the optical fiber and the laser diode chip in the first and the second groove;wherein said laser diode chip is manufactured by: (1) vapor-depositing a nitride thin film (Si3N4) on the surface of a wafer on which an n type InP, a p type InP, an n type InP, a p type InP and InGaAs layers are successively laminated with the completion of a tertiary MOCVD growth, and etching the InGaAs layer by using a mixed solution of sulfuric acid, hydrogen peroxide and distilled water after opening an etching window by means of photolithography to form V-grooves as cutting sites to control the size of laser diode chip to within +1 micron; (2) etching an InP layer as a current cut-off layer by using a hydrochloric acid solution; (3) vapor-depositing a nitride thin film(SiNx) by using a PECVD process; (4) opening the electrode forming window to form electrodes by means of a photolithography and forming P type electrodes on the surface of the wafer; (5) forming a N type electrode on the back surface of the wafer after polishing the bottom surface; and (6) manufacturing laser diode chips having a desired size by cutting the V- grooves on the chip set with a breaker, when the laser diode chip set with V-grooves is completed through the above described steps of (1) to (5).