초록 ▼

Methods are disclosed for forming shaped structures from silicon and/or germanium containing material with a material removal process that is selective to low stress portions of the material. In general, the method initially provides a layer of the material on a semiconductor substrate. The material

Methods are disclosed for forming shaped structures from silicon and/or germanium containing material with a material removal process that is selective to low stress portions of the material. In general, the method initially provides a layer of the material on a semiconductor substrate. The material, which has uniform stress therein, is then masked, and the stress in a portion of the material is reduced, such as by implanting ions into an unmasked portion. The mask is removed, and the high stress masked portion of the material is selectively removed, preferably by an etching process. The low stress portion of the material remains and forms a shaped structure. One preferred selective etching process uses a basic etchant. The various methods are used to form raised shaped structures, shaped openings, polysilicon plugs, capacitor storage nodes, surround-gate transistors, free-standing walls, interconnect lines, trench capacitors, and trench isolation regions.

대표청구항 ▼

1. A method of selectively removing material from a semiconductor substrate, comprising:providing a volume of a material located on a semiconductor substrate, said volume of said material having therein a first portion and a second portion, the first portion having implanted therein atomic particles

1. A method of selectively removing material from a semiconductor substrate, comprising:providing a volume of a material located on a semiconductor substrate, said volume of said material having therein a first portion and a second portion, the first portion having implanted therein atomic particles at a first concentration, and the second portion having implanted therein said atomic particles at a second concentration, wherein the first concentration is greater than the second concentration; selectively removing said material, wherein the material removal rate from the second portion is greater than the material removal rate from the first portion; and maintaining the semiconductor substrate within a temperature range after said first and second portions of said volume of said material were implanted with said atomic particles and until selectively removing said material from the second portion, so that the implanted atomic particles in the volume of the material are not substantially diffused.