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[미국특허] Semiconductor hetero-interface photodetector 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-029/06
  • H01L-031/107
  • H01L-031/00
출원번호 US-0597970 (2000-06-20)
발명자 / 주소
  • John E. Bowers
  • Aaron R. Hawkins
출원인 / 주소
  • The Regents of the University of California
대리인 / 주소
    Gates & Cooper LLP
인용정보 피인용 횟수 : 27  인용 특허 : 36

초록

By using wafer fusion, various structures for photodetectors and photodetectors integrated with other electronics can be achieved. The use of silicon as a multiplication region and III-V compounds as an absorption region create photodetectors that are highly efficient and tailored to specific applic

대표청구항

1. A photodetector, comprising:an absorption layer with a first lattice constant; and a multiplication layer with a second lattice constant fused to the absorption layer to permit a current to effectively pass between the absorption layer and the multiplication layer, said first lattice constant bei

이 특허에 인용된 특허 (36) 인용/피인용 타임라인 분석

  1. Kobayashi Masahiro (Inagi JPX) Yamazaki Susumu (Hadano JPX) Mikawa Takashi (Tokyo JPX) Nakajima Kazuo (Kawasaki JPX) Kaneda Takao (Kawasaki JPX), Avalanche multiplication photodiode having a buried structure.
  2. Brennan Kevin F. (Atlanta GA), Avalanche photodetector.
  3. Yoo Ji-Beom (Daejeon KRX) Park Chan-Yong (Daejeon KRX) Kim Hong-Man (Daejeon KRX), Avalanche photodiode having a multiplication layer with superlattice.
  4. Webb Paul P. (Beaconsfield CAX), Avalanche photodiode with central zone in active and absorptive layers.
  5. Quenzer Hans J. (Berlin DEX) Benecke Wolfgang (Vorwerk-Buchholz DEX), Direct substrate bonding.
  6. Dell John M. (Blackurn South AUX) Yoffe Gideon W. (Eindhoven NLX), Electro-optic device.
  7. Tabatabaie Nader (Red Bank NJ), Fabrication method for modified planar semiconductor structures.
  8. Kurtz Anthony D. (Teaneck NJ) Ned Alexander A. (Bloomingdale NJ), Fusion bonding technique for use in fabricating semiconductor devices.
  9. Terranova Nancy (Wilmington DE) Barnett Allen M. (Newark DE), Hetero-epitaxial growth of non-lattice matched semiconductors.
  10. Koch Thomas L. (Holmdel NJ) Kogelnik Herwig (Rumson NJ) Koren Uziel (Fair Haven NJ), Inline diplex lightwave transceiver.
  11. Bhat Rajaram (Red Bank NJ) Lo Yu-hwa (Ithaca NY), Low-temperature fusion of dissimilar semiconductors.
  12. Kish ; Jr. Fred A. ; Vanderwater David A., Method for bonding compounds semiconductor wafers to create an ohmic interface.
  13. Kasahara Kenichi (Tokyo JPX) Sugou Shigeo (Tokyo JPX), Method for fabricating semiconductor laser and photo detecting arrays for wavelength division multiplexing optical inter.
  14. Goossen Keith W. (Aberdeen NJ), Method for manufacturing integrated semiconductor devices.
  15. Grupen-Shemansky Melissa E. (Phoenix AZ) Cambou Bertrand F. (Mesa AZ), Method of bonding silicon and III-V semiconductor materials.
  16. Takahashi Shigeki (Kawasaki JPX) Shiraki Yasuhiro (Tokyo JPX), Method of forming a pattern in semiconductor device manufacturing process.
  17. Forrest Stephen R. (Torrance CA), Method of making avalanche photodiode.
  18. Black Robert D. (Clifton Park NY) Arthur Stephen D. (Scotia NY) Gilmore Robert S. (Burnt Hills NY) Glascock ; II Homer H. (Scotia NY), Method of making direct bonded wafers having a void free interface.
  19. Furuyama Hideto (Tokyo JPX) Sadamasa Tetsuo (Chigasaki JPX), Method of manufacturing a semiconductor light detector.
  20. Matsushima Yuichi (Tokorozawa JPX) Sakai Kazuo (Tokyo JPX) Akiba Shigeyuki (Tokyo JPX), Method of manufacturing avalanche photo diode.
  21. Liu Hui Chun (1400 Turner Crescent Orleans Ontario CAX K1E 2Y4 ), Multicolor voltage tunable quantum well intersubband infrared photodetector.
  22. Maruska H. Paul (Acton MA), Optical heterodyne receiver for fiber optic communications system.
  23. Duboz Jean-Yves,FRX, Optoelectronic quantum well device having an optical resonant cavity and sustaining inter subband transitions.
  24. Nakagawa Katsumi (Nagahama JPX) Ishihara Shunichi (Hikone JPX) Kanai Masahiro (Tokyo JPX) Murakami Tsutomu (Nagahama JPX) Arao Kozo (Hikone JPX) Fujioka Yasushi (Nagahama JPX) Sakai Akira (Nagahama J, PIN junction photovoltaic element containing Zn, Se, Te, H in an amount of 1 to 4 atomic %.
  25. Sands Timothy D. (Cranbury NJ), Palladium welding of a semiconductor body.
  26. Hunt Neil E. J. (Scotch Plains NJ) Schubert Erdmann F. (New Providence NJ) Zydzik George J. (Columbia NJ), Photodetector with a resonant cavity.
  27. Bryan Robert P. (Boulder CO) Olbright Gregory R. (Boulder CO) Brennan Thomas M. (Albuquerque NM) Tsao Jeffrey Y. (Albuquerque NM), Photodetector with absorbing region having resonant periodic absorption between reflectors.
  28. Matsuyama Jinsho (Nagahama JPX) Murakami Tsutomu (Nagahama JPX) Matsuda Koichi (Nagahama JPX) Yamamoto Hiroshi (Nagahama JPX) Yamashita Toshihiro (Nagahama JPX), Pin junction photovoltaic element having an I-type semiconductor layer with a plurality of regions having different grad.
  29. Unlu M. Selim ; Onat Bora, Polarization sensitive photodetectors and detector arrays.
  30. Biallas Vesna (Ruetlingen DEX) Goebel Herbert (Ruetlingen DEX) Spitz Richard (Ruetlingen DEX), Process for manufacturing semiconductor components.
  31. Bethea Clyde G. (943 Hillside Ave. Plainfield NJ 07062) Hasnain Ghulam (14 Daphne Ct. Edison NJ 08820) Levine Barry F. (22 Bear Brook La. Livingston NJ 07039) Malik Roger J. (23 Ridgedale Ave. Summit, Quantum-well radiation-interactive device, and methods of radiation detection and modulation.
  32. Okuno Yae (Kokubunji JPX) Uomi Kazuhisa (Hachioji JPX) Aoki Masahiro (Kokubunji JPX) Sagawa Misuzu (Kokubunji JPX), Semiconductor device having first and second semiconductor structures directly bonded to each other.
  33. Bowers John E. ; Hawkins Aaron R., Semiconductor hetero-interface photodetector.
  34. Bowers John E. ; Hawkins Aaron R., Semiconductor hetero-interface photodetector.
  35. Cunningham John E. (Lincroft NJ) Goossen Keith W. (Aberdeen NJ), Surface-normal semiconductor optical cavity devices.
  36. Kish Fred A. (San Jose CA) Steranka Frank M. (San Jose CA) DeFevere Dennis C. (Palo Alto CA) Robbins Virginia M. (Los Gatos CA) Uebbing John (Palo Alto CA), Wafer bonding of light emitting diode layers.

이 특허를 인용한 특허 (27) 인용/피인용 타임라인 분석

  1. Kang, Yong-Hoon; Kim, Jeong-Mee, Arrayed waveguide grating module and device and method for monitoring optical signal using the same.
  2. Shi, Jin-Wei; Liu, Chee-Wee, Avalanche photo-detector with high saturation power and high gain-bandwidth product.
  3. Dries,J. Christopher; Douma,Darin J.; Hofmeister,Rudolf J., Controlling the dynamic range of an avalanche photodiode.
  4. Morse, Michael T.; Dosunmu, Olufemi I.; Liu, Ansheng; Paniccia, Mario J., Germanium/silicon avalanche photodetector with separate absorption and multiplication regions.
  5. Morse, Michael T.; Dosunmu, Olufemi I.; Liu, Ansheng; Paniccia, Mario J., Germanium/silicon avalanche photodetector with separate absorption and multiplication regions.
  6. Huffaker, Diana L.; Dawson, Larry R.; Balakrishnan, Ganesh, Hybrid integration based on wafer-bonding of devices to AlSb monolithically grown on Si.
  7. Bowers, John E., Hybrid silicon evanescent photodetectors.
  8. Bowers, John E., Hybrid silicon optoelectronic device and method of formation.
  9. Bowers, John E., III-V photonic integration on silicon.
  10. Bowers, John E., III-V photonic integration on silicon.
  11. Bowers, John E., III-V photonic integration on silicon.
  12. Bowers, John Edward, III-V photonic integration on silicon.
  13. Parekh, Nileshkumar J.; Ulupinar, Fatih; Prakash, Rajat, Inter-frequency handoff.
  14. Pauchard, Alexandre; Morse, Michael T., Inverted planar avalanche photodiode.
  15. Bowers, John E.; Cohen, Oded; Fang, Alexander W.; Jones, Richard; Paniccia, Mario J.; Park, Hyundai, Method for electrically pumped semiconductor evanescent laser.
  16. Singh, Ranbir, Method, apparatus, material, and system of using a high gain avalanche photodetector transistor.
  17. Fowler, Daivid; Espiau de Lamaestre, Roch, Photodetection device.
  18. Espiau De Lamaestre, Roch; Boutami, Salim; Gravrand, Olivier; Le Perchec, Jérôme, Photodetector optimized by metal texturing provided on the rear surface.
  19. Parekh, Nileshkumar J.; Ulupinar, Fatih; Prakash, Rajat, Resource allocation during tune-away.
  20. Sarid, Gadi; Kang, Yimin; Pauchard, Alexandre, Semi-planar avalanche photodiode.
  21. Morse,Michael T., Semiconductor waveguide-based avalanche photodetector with separate absorption and multiplication regions.
  22. Morse,Michael T., Semiconductor waveguide-based avalanche photodetector with separate absorption and multiplication regions.
  23. Song, I-hun; Huaxiang, Yin; Jeon, Sang-hun; Park, Sung-ho, Transistors, methods of manufacturing the same, and electronic devices including transistors.
  24. Parekh, Nileshkumar J.; Ulupinar, Fatih; Prakash, Rajat, Tune-away and cross paging systems and methods.
  25. Parekh, Nileshkumar J.; Ulupinar, Fatih; Prakash, Rajat, Tune-away protocols for wireless systems.
  26. Parekh, Nileshkumar J.; Ulupinar, Fatih; Prakash, Rajat, Tune-away protocols for wireless systems.
  27. Parekh, Nileshkumar Jayendrabhai; Ulupinar, Fatih; Prakash, Rajat, Tune-away protocols for wireless systems.

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