[특허]Method for forming a radio frequency responsive target and apparatus for verifying the authenticity of same

[미국특허] Method for forming a radio frequency responsive target and apparatus for verifying the authenticity of same 원문보기

IPC분류정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	H01B-013/00
출원번호	US-0328651 (1999-06-09)
발명자 / 주소	Morton Greene G. William Hurley
출원인 / 주소	Gordion Holding Corporation
대리인 / 주소	ReedSmith LLP
인용정보	피인용 횟수 : 30 인용 특허 : 14

초록 ▼

A method for forming a radio frequency responsive target formed of a pattern of thin dipoles, each of which has a position and angular orientation within the pattern, which produce a composite analog radio frequency signal in response to an interrogating signal. A first metallic film layer is deposited on top of a non-conductive substrate, an etchant resistant pattern correspondent to the thin dipole pattern is deposited on top of the first metallic film layer, and a second metallic layer occupying the first metallic layer in at least one area without etchant is applied on top of the first metallic film layer. The etchant resistant pattern is removed to expose portions of the first metallic film layer, and the second metallic layer and the exposed portions of the first metallic film layer are etched simultaneously.

대표청구항 ▼

1. A method for forming a radio frequency responsive target, comprising the steps of:(A) depositing a first metallic film layer on a non-conductive substrate; (B) generating a pattern of thin dipoles, each of said thin dipoles having a position and m angular orientation within said pattern of thin dipoles; (C) depositing an etchant resistant pattern on top of said first metallic film layer, said etchant resistant pattern corresponding to a photographic image of said pattern of thin dipoles, said etchant resistant pattern having a thickness; (D) after step (C), applying a second metallic layer on top of said first metallic film layer, said second metallic layer occupying areas on said first metallic film layer where said etchant resistant pattern is absent, said second metallic layer having a thickness equal to said thickness of said etchant resistant pattern; (E) after step (D), removing said etchant resistant pattern in order to expose portions of said first metallic film layer, and (F) after step (E), simultaneously etching said second metallic layer and said portions of said first metallic film layer until said portions of said first metallic film layer have been removed from said non-conductive substrate; wherein said target is formed of said pat of thin dipoles, and wherein said thin dipoles produce a composite analog radio frequency signal in response to an interrogating signal.

이 특허에 인용된 특허 (14) 인용/피인용 타임라인 분석

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Rensch David B. (Thousand Oaks CA) Chen John Y. (Los Angeles CA), Method for forming thin conducting lines by ion implantation and preferential etching.
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A	생활필수품
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[미국특허] Method for forming a radio frequency responsive target and apparatus for verifying the authenticity of same 원문보기