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[미국특허] Dual hybrid magnetic tunnel junction/giant magnetoresistive sensor 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • G11B-005/39
출원번호 US-0588849 (2000-06-06)
발명자 / 주소
  • Hardayal (Harry) Singh Gill
출원인 / 주소
  • International Business Machines Corporation
대리인 / 주소
    William D. Gill
인용정보 피인용 횟수 : 67  인용 특허 : 19

초록 ▼

A dual hybrid magnetic tunnel junction (MTJ)/giant magnetoresistance (GMR) sensor is provided having an MTJ stack, a GMR stack and a common free layer. The MTJ stack includes a first antiferromagnetic (AFM) layer, an first antiparallel (AP)-pinned layer and a tunnel barrier layer. The GMR stack, ope

대표청구항 ▼

1. A dual hybrid magnetic tunnel junction (MTJ)/giant magnetoresisive (GMR) sensor, comprising:an MTJ stack, including a first AP-pinned layer and a tunnel barrier layer, said tunnel barrier layer adjacent to and in contact with said first AP-pinned layer; a GMR stack, including a second AP-pinned l

이 특허에 인용된 특허 (19) 인용/피인용 타임라인 분석

  1. Tong Hua-Ching ; Shi Xizeng ; Dey Subrata ; Gibbons Matthew Richard, Current pinned dual spin valve with synthetic pinned layers.
    상세보기
  2. Baumgart Peter M. (San Jose CA) Dieny Bernard (Grenoble Credex CA FRX) Gurney Bruce A. (Santa Clara CA) Nozieres Jean-Pierre (Corenc CA FRX) Speriosu Virgil S. (San Jose CA) Wilhoit Dennis R. (Morgan, Dual spin valve magnetoresistive sensor.
    상세보기
  3. Noguchi Kiyoshi,JPX ; Oike Taro,JPX ; Araki Satoru,JPX ; Ohta Manabu,JPX ; Sano Masashi,JPX, Ferromagnetic tunnel junction, magnetoresistive element and magnetic head.
    상세보기
  4. Mizushima Koichi,JPX ; Kinno Teruyuki,JPX ; Yamauchi Takashi,JPX ; Inomata Koichiro,JPX, Magnetic device and magnetic sensor using the same.
    상세보기
  5. Fontana ; Jr. Robert Edward ; Parkin Stuart Stephen Papworth, Magnetic tunnel junction device with longitudinal biasing.
    상세보기
  6. Fontana ; Jr. Robert Edward ; Parkin Stuart Stephen Papworth ; Tsang Ching Hwa ; Williams Mason Lamar, Magnetic tunnel junction magnetoresistive read head with sensing layer as rear flux guide.
    상세보기
  7. Gallagher William Joseph (Ardsley NY) Parkin Stuart Stephen Papworth (San Jose CA) Slonczewski John Casimir (Katonah NY) Sun Jonathan Zanhong (Mohegan Lake NY), Magnetic tunnel junctions with controlled magnetic response.
    상세보기
  8. Sakakima Hiroshi,JPX ; Irie Yousuke,JPX, Magnetoresistance element, magnetoresistive head and magnetoresistive memory.
    상세보기
  9. Akiyama Junichi,JPX ; Yoda Hiroaki,JPX ; Ohsawa Yuichi,JPX ; Iwasaki Hitoshi,JPX, Magnetoresistive head having an antiferromagnetic layer interposed between first and second magnetoresistive elements.
    상세보기
  10. Akiyama Junichi (Kawasaki JPX) Yoda Hiroaki (Kawasaki JPX) Ohsawa Yuichi (Yokohama JPX) Iwasaki Hitoshi (Yokohama JPX), Magnetoresistive head with antiferromagnetic sublayers interposed between first and second spin-valve units to exchange.
    상세보기
  11. Dieny Bernard (San Jose CA) Gurney Bruce A. (Santa Clara CA) Lambert Steven E. (San Jose CA) Mauri Daniele (San Jose CA) Parkin Stuart S. P. (San Jose CA) Speriosu Virgil S. (San Jose CA) Wilhoit Den, Magnetoresistive sensor based on the spin valve effect.
    상세보기
  12. Gurney Bruce A. (Santa Clara CA) Heim David E. (Redwood City CA) Lefakis Haralambos (San Jose CA) Need ; III Omar U. (San Jose CA) Speriosu Virgil S. (San Jose CA) Wilhoit Dennis R. (Morgan Hill CA), Magnetoresistive spin valve sensor having a nonmagnetic back layer.
    상세보기
  13. Kamiguchi Yuzo,JPX ; Saito Akiko,JPX ; Koui Katsuhiko,JPX ; Yoshikawa Masatoshi,JPX ; Yuasa Hiromi,JPX ; Fukuzawa Hideaki,JPX ; Hashimoto Susumu,JPX ; Iwasaki Hitoshi,JPX ; Yoda Hiroaki,JPX ; Sahashi, Multi-layered thin-film functional device and magnetoresistance effect element.
    상세보기
  14. Gill Hardayal Singh, Resettable symmetric spin valve.
    상세보기
  15. Gallagher William Joseph ; Parkin Stuart Stephen Papworth, Small area magnetic tunnel junction devices with low resistance and high magnetoresistance.
    상세보기
  16. Ohtsuka Yoshinori,JPX ; Mizoshita Yoshifumi,JPX ; Koshikawa Takao,JPX, Spin valve magnetoresistive head with spun valves connected in series.
    상세보기
  17. Gill Hardayal Singh (Portola Valley CA) Gurney Bruce A. (Santa Clara CA), Spin valve sensor with antiparallel magnetization of pinned layers.
    상세보기
  18. Saito Masamichi,JPX ; Hasegawa Naoya,JPX, Spin-valve type magnetoresistive thin film element comprising free magnetic layer having nife alloy layer.
    상세보기
  19. Zhu Theodore ; Goronkin Herbert, Symmetric magnetic tunnel device.
    상세보기

이 특허를 인용한 특허 (67) 인용/피인용 타임라인 분석

  1. Gill, Hardayal Singh, Bias structure for magnetic tunnel junction magnetoresistive sensor.
    상세보기
  2. Shimizu, Yutaka; Oshima, Hirotaka; Nagasaka, Keiichi; Seyama, Yoshihiko; Tanaka, Atsushi, CPP GMR free layer having ferromagnetic layers with parallel magnetization separated by non-magnetic layer.
    상세보기
  3. Gill,Hardayal Singh, CPP GMR using Fe based synthetic free layer.
    상세보기
  4. Ohtsu,Takayoshi; Shigematsu,Satoshi; Nishioka,Kouji; Imagawa,Takao; Kataoka,Kouji; Arasawa,Masatoshi; Miyamoto,Norifumi, CPP magneto resistive head with decreased variation in asymmetry and output.
    상세보기
  5. Gill, Hardayal Singh, Differential yoke type read head.
    상세보기
  6. Li,Shaoping; Xue,Song; Gao,Kaizhong; Ryan,Patrick, Differential/dual CPP recording head.
    상세보기
  7. Gadbois, Jason Bryce; Mastain, Steven A.; Price, James K., Electrically insulating magnetic material for a read head.
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  8. Braganca, Patrick M.; Li, Yang; Katine, Jordan A.; Smith, Neil; Tseng, Hsin-Wei, Fabrication of side-by-side sensors for MIMO recording.
    상세보기
  9. Saito, Yoshiaki; Sagoi, Masayuki; Amano, Minoru; Nakajima, Kentaro; Takahashi, Shigeki; Kishi, Tatsuya, Ferromagnetic double tunnel junction element with asymmetric energy band.
    상세보기
  10. Saito,Yoshiaki; Sagoi,Masayuki; Amano,Minoru; Nakajima,Kentaro; Takahashi,Shigeki; Kishi,Tatsuya, Ferromagnetic double tunnel junction element with asymmetric energy band.
    상세보기
  11. Li, Jinshan; Lin, Tsann, GMR sensors with strongly pinning and pinned layers.
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  12. Carey, Matthew Joseph; Childress, Jeffrey Robinson; Gurney, Bruce Alvin, Heterogeneous spacers for CPP GMR stacks.
    상세보기
  13. Wu, Wenqing; Madala, Raghu Sagar; Yuen, Kendrick Hoy Leong; Arabi, Karim, High density low power GSHE-STT MRAM.
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  14. Wu, Wenqing; Madala, Raghu Sagar; Yuen, Kendrick Hoy Leong; Arabi, Karim, High density low power GSHE-STT MRAM.
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  15. Mao,Sining; Nowak,Janusz J.; Linville,Eric S.; Chen,Jian, High sensitivity tunneling GMR sensors with synthetic antiferromagnet free layer.
    상세보기
  16. Heide, Carsten, Magnetic memory device.
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  17. Fukuzawa, Hideaki; Fuji, Yoshihiko; Yuasa, Hiromi; Iwasaki, Hitoshi, Magnetic recording element including a thin film layer with changeable magnetization direction.
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  18. Hasegawa, Naoya; Hayakawa, Yasuo, Magnetic sensing element permitting decrease in effective element size while maintaining large optical element size.
    상세보기
  19. Fuji, Yoshihiko; Fukuzawa, Hideaki; Yuasa, Hiromi, Magneto-resistance effect element.
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  20. Hayashi,Kazuhiko; Fujikata,Junichi; Ishi,Tsutomu; Mori,Shigeru; Ohashi,Keishi; Nakada,Masafumi; Nagahara,Kiyokazu; Ishihara,Kunihiko; Ishiwata,Nobuyuki, Magneto-resistance effect element and magneto-resistance effect head.
    상세보기
  21. Fuji, Yoshihiko; Fukuzawa, Hideaki; Yuasa, Hiromi; Zhang, Kunliang; Li, Min; Hara, Michiko; Kurosaki, Yoshinari, Magneto-resistance effect element, and method for manufacturing the same.
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  22. Fuji, Yoshihiko; Fukuzawa, Hideaki; Yuasa, Hiromi; Zhang, Kunliang; Li, Min; Hara, Michiko; Kurosaki, Yoshinari, Magneto-resistance effect element, and method for manufacturing the same.
    상세보기
  23. Fuke, Hiromi; Hashimoto, Susumu; Takagishi, Masayuki; Iwasaki, Hitoshi, Magneto-resistance effect element, magnetic head, magnetic recording/reproducing device and magnetic memory.
    상세보기
  24. Fuke, Hiromi; Hashimoto, Susumu; Takagishi, Masayuki; Iwasaki, Hitoshi, Magneto-resistance effect element, magnetic head, magnetic recording/reproducing device and method for manufacturing a magneto-resistance effect element.
    상세보기
  25. Kamiguchi,Yuuzo; Yuasa,Hiromi; Nagata,Tomohiko; Yoda,Hiroaki, Magnetoresistance effect element, and magnetic head and magnetic recording and/or reproducing system utilizing the magnetoresistance element.
    상세보기
  26. Okuno, Shiho; Ohsawa, Yuichi; Haneda, Shigeru; Kamiguchi, Yuzo; Kishi, Tatsuya, Magnetoresistance effect element, its manufacturing method, magnetic reproducing element and magnetic memory.
    상세보기
  27. Okuno,Shiho; Ohsawa,Yuichi; Haneda,Shigeru; Kamiguchi,Yuzo; Kishi,Tatsuya, Magnetoresistance effect element, its manufacturing method, magnetic reproducing element and magnetic memory.
    상세보기
  28. Okuno,Shiho; Ohsawa,Yuichi; Haneda,Shigeru; Kamiguchi,Yuzo; Kishi,Tatsuya, Magnetoresistance effect element, its manufacturing method, magnetic reproducing element and magnetic memory.
    상세보기
  29. Kamiguchi, Yuuzo; Yuasa, Hiromi; Nagata, Tomohiko; Yoda, Hiroaki, Magnetoresistance effect element, magnetic head and magnetic recording and/or reproducing system.
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  30. Kamiguchi,Yuuzo; Yuasa,Hiromi; Nagata,Tomohiko; Yoda,Hiroaki, Magnetoresistance effect element, magnetic head and magnetic recording and/or reproducing system.
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  31. Kim,Young Keun; Park,Jeong Suk; Lee,Seong Rae, Magnetoresistive device exhibiting small and stable bias fields independent of device size variation.
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  32. Fukuzawa, Hideaki; Yuasa, Hiromi; Fuji, Yoshihiko; Iwasaki, Hitoshi, Magnetoresistive effect element and manufacturing method thereof.
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  33. Hashimoto, Susumu; Fuke, Hiromi; Iwasaki, Hitoshi; Doi, Masaaki; Miyake, Kousaku; Sahashi, Masashi, Magnetoresistive effect element and manufacturing method thereof, and magnetic head, magnetic reproducing apparatus, and magnetic memory using the same.
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  34. Yuasa,Hiromi; Yoshikawa,Masatoshi; Koui,Katsuhiko; Iwasaki,Hitoshi; Sahashi,Masashi, Magnetoresistive effect element, magnetic head and magnetic reproducing apparatus.
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  35. Yuasa,Hiromi; Yoshikawa,Masatoshi; Koui,Katsuhiko; Iwasaki,Hitoshi; Sahashi,Masashi, Magnetoresistive effect element, magnetic head and magnetic reproducing apparatus.
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  36. Yuasa,Hiromi; Yoshikawa,Masatoshi; Koui,Katsuhiko; Iwasaki,Hitoshi; Sahashi,Masashi, Magnetoresistive effect element, magnetic head and magnetic reproducing apparatus.
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  37. Yuasa,Hiromi; Fukuzawa,Hideaki; Hashimoto,Susumu; Iwasaki,Hitoshi, Magnetoresistive effect element, magnetic head, and magnetic reproducing apparatus.
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  38. Fukuzawa, Hideaki; Murakami, Shuichi; Yuasa, Hiromi; Fuji, Yoshihiko, Magnetoresistive element and method of manufacturing the same.
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  39. Murakami, Shuichi; Fukuzawa, Hideaki; Yuasa, Hiromi; Fuji, Yoshihiko, Magnetoresistive element and method of manufacturing the same.
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  40. Schwarzl, Siegfried, Memory cell configuration and production method.
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  44. Gill, Hardayal Singh, Method and apparatus for providing improved pinning structure for tunneling magnetoresistive sensor.
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  50. Yuasa, Hiromi; Fukuzawa, Hideaki; Fuji, Yoshihiko; Iwasaki, Hitoshi, Method for manufacturing magnetoresistance effect element.
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