초록 ▼

A method of manufacturing an integrated circuit with a channel region containing germanium. The method can provide a double planar gate structure. The gate structure can be provided over lateral sidewalls of channel region. The semiconductor material containing germanium can increase the charge mobi

A method of manufacturing an integrated circuit with a channel region containing germanium. The method can provide a double planar gate structure. The gate structure can be provided over lateral sidewalls of channel region. The semiconductor material containing germanium can increase the charge mobility associated with the transistor. An epitaxy process can form the channel region. A silicon-on-insulator can be used.

대표청구항 ▼

1. A method of manufacturing an integrated circuit on a substrate, the method comprising:providing a fin area in the substrate; narrowing a width of the fin area by growing a sacrificial material on first sidewalls of the fin area and subsequently removing the sacrificial material to form second sid

1. A method of manufacturing an integrated circuit on a substrate, the method comprising:providing a fin area in the substrate; narrowing a width of the fin area by growing a sacrificial material on first sidewalls of the fin area and subsequently removing the sacrificial material to form second sidewalls on the fin area; providing silicon-germanium material on the second sidewalls of the fin area; providing a dielectric layer over the slicon-germanium material; and providing a gate conductor over the dielectric layer.