초록 ▼

A damascene structure and method of making the same in a low k dielectric material employs an imageable layer in which the damascene pattern is provided. The imageable layer is an alicyclic polymer into which silicon is incorporated by liquid silylation, for example. The silicon-rich regions are con

A damascene structure and method of making the same in a low k dielectric material employs an imageable layer in which the damascene pattern is provided. The imageable layer is an alicyclic polymer into which silicon is incorporated by liquid silylation, for example. The silicon-rich regions are converted upon exposure to the plasma etch that etches the low k dielectric material into a hard mask containing silicon dioxide, for example. The low k dielectric material is protected from further etching by the mask thus created.

대표청구항 ▼

1. A method of forming a damascene structure in a semiconductor device, comprising the steps of:forming a first low k dielectric layer; depositing an imageable layer comprising an alicyclic polymer on the first low k dielectric layer; patterning the first imageable layer to create a first patterned

1. A method of forming a damascene structure in a semiconductor device, comprising the steps of:forming a first low k dielectric layer; depositing an imageable layer comprising an alicyclic polymer on the first low k dielectric layer; patterning the first imageable layer to create a first patterned layer having an upper surface with an opening defined by side surfaces in the first patterned layer; performing liquid silylation of the first patterned layer to form a silicon-rich region on the upper surface and the side surfaces of the first patterned layer; etching the first low k dielectric layer through the opening while simultaneously converting the silicon-rich region into silicon dioxide which functions as a hard mask protecting the first low k dielectric layer from being etched except through the opening.