[특허]CVD ruthenium seed for CVD ruthenium deposition

[미국특허] CVD ruthenium seed for CVD ruthenium deposition 원문보기

IPC분류정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	C23C-016/40
출원번호	US-0827878 (2001-04-05)
발명자 / 주소	Xiaoliang Jin Christopher P. Wade Xianzhi Tao Elaine Pao Yaxin Wang Jun Zhao
출원인 / 주소	Applied Materials, Inc.
대리인 / 주소	Adler & Associates
인용정보	피인용 횟수 : 30 인용 특허 : 5

초록 ▼

The present invention provides a method of forming a ruthenium seed layer on a substrate comprising the steps of introducing a ruthenium-containing compound into a CVD apparatus; introducing oxygen into the CVD apparatus; maintaining an oxygen rich environment in the process chamber for the initial formation of a ruthenium oxide seed layer; vaporizing the ruthenium-containing compound; depositing the ruthenium oxide seed layer onto the substrate by chemical vapor deposition; and annealing the deposited ruthenium oxide seed layer in a gas ambient forming a ruthenium seed layer. Also provided is a method of depositing a ruthenium thin metal film using a metalorganic precursor onto a CVD ruthenium seed layer by metalorganic chemical vapor deposition.

대표청구항 ▼

1. A method of forming a ruthenium seed layer on a substrate comprising the steps of:(a) vaporizing a ruthenium-containing compound; (b) introducing the vaporized ruthenium-containing compound into a CVD apparatus; (c) introducing oxygen into the CVD apparatus to form an oxygen rich environment; wherein said oxygen is introduced at a flow rate of about 1000 sccm to about 5000 sccm; (d) maintaining the oxygen rich environment in a process chamber of the CVD apparatus; (e) depositing a ruthenium oxide layer onto the substrate by chemical vapor deposition; and (f) annealing the deposited ruthenium oxide layer in a gas ambient to remove oxygen from said ruthenium oxide layer thus forming the ruthenium seed layer.

이 특허에 인용된 특허 (5) 인용/피인용 타임라인 분석

Kang Chang-seok,KRX, Fabricating method of making a fin shaped capacitor.
상세보기
Eguchi Kazuhiro (Yokohama JPX) Kiyotoshi Masahiro (Sagamihara JPX) Imai Keitaro (Kawasaki JPX), Method of manufacturing a perovskite thin film dielectric.
상세보기
Vaartstra Brian A., Precursor chemistries for chemical vapor deposition of ruthenium and ruthenium oxide.
상세보기
Ueda Michihito,JPX ; Ohtsuka Takashi,JPX, Semiconductor memory device and method for fabricating the same.
상세보기
Chapple-Sokol Jonathan D. (Poughkeepsie NY) Conti Richard A. (Mt. Kisco NY) Gambino Jeffrey P. (Gaylordsville CT), Storage capacitor with a conducting oxide electrode for metal-oxide dielectrics.
상세보기

이 특허를 인용한 특허 (30) 인용/피인용 타임라인 분석

Hendrix, Bryan C.; Chen, Philip S. H.; Li, Weimin; Jang, Woosung; Guo, Dingkai, ALD processes for low leakage current and low equivalent oxide thickness BiTaO films.
상세보기
Ma, Paul; Shah, Kavita; Wu, Dien-Yeh; Ganguli, Seshadri; Marcadal, Christophe; Wu, Frederick C.; Chu, Schubert S., Apparatus and process for plasma-enhanced atomic layer deposition.
상세보기
Ma, Paul; Shah, Kavita; Wu, Dien-Yeh; Ganguli, Seshadri; Marcadal, Christophe; Wu, Frederick C.; Chu, Schubert S., Apparatus and process for plasma-enhanced atomic layer deposition.
상세보기
Ma, Paul; Shah, Kavita; Wu, Dien-Yeh; Ganguli, Seshadri; Marcadal, Christophe; Wu, Frederick C.; Chu, Schubert S., Apparatus and process for plasma-enhanced atomic layer deposition.
상세보기
Hendrix, Bryan C.; Welch, James J.; Bilodeau, Steven M.; Roeder, Jeffrey F.; Xu, Chongying; Baum, Thomas H., Chemical vapor deposition of high conductivity, adherent thin films of ruthenium.
상세보기
Hendrix, Bryan C.; Welch, James J.; Bilodeau, Steven M.; Roeder, Jeffrey F.; Xu, Chongying; Baum, Thomas H., Chemical vapor deposition of high conductivity, adherent thin films of ruthenium.
상세보기
Hendrix,Bryan C.; Welch,James J.; Bilodeau,Steven M.; Roeder,Jeffrey F.; Xu,Chongying; Baum,Thomas H., Chemical vapor deposition of high conductivity, adherent thin films of ruthenium.
상세보기
Xu, Chongying; Li, Weimin; Cameron, Thomas M., In situ generation of RuO4 for ALD of Ru and Ru related materials.
상세보기
Lubguban, Jr., Jorge A.; Cameron, Thomas M.; Xu, Chongying; Li, Weimin, Method and composition for depositing ruthenium with assistive metal species.
상세보기
Yang,Sam, Method for forming a ruthenium metal layer.
상세보기
Yang, Sam, Method for forming a ruthenium metal layer and a structure comprising the ruthenium metal layer.
상세보기
Park, Kyung Woong; Choi, Jung Hwan; Han, Young Ki, Method of forming ruthenium thin film using plasma enhanced process.
상세보기
Park,Soon Yeon; Yoo,Cha Young; Won,Seok Jun, Method of forming thin ruthenium-containing layer.
상세보기
Chu, Schubert S.; Wu, Frederick C.; Marcadal, Christophe; Ganguli, Seshadri; Wu, Dien-Yeh; Shah, Kavita; Ma, Paul, Method of recovering valuable material from exhaust gas stream of a reaction chamber.
상세보기
Xia, Bin; Misra, Ashutosh, Methods for forming a ruthenium-based film on a substrate.
상세보기
Won, Seok-jun; Yoo, Cha-young; Kim, Sung-tae; Park, Young-wook; Lee, Yun-jung; Park, Soon-yeon, Methods of chemical vapor depositing ruthenium by varying chemical vapor deposition parameters.
상세보기
Won, Seok-jun; Yoo, Cha-young, Methods of forming ruthenium film by changing process conditions during chemical vapor deposition and ruthenium films formed thereby.
상세보기
Won,Seok jun; Yoo,Cha young, Methods of forming ruthenium film by changing process conditions during chemical vapor deposition and ruthenium films formed thereby.
상세보기
Chang, Mei; Chen, Ling, Noble metal layer formation for copper film deposition.
상세보기
Chang,Mei; Chen,Ling, Noble metal layer formation for copper film deposition.
상세보기
Xu, Chongying; Chen, Tianniu; Cameron, Thomas M.; Roeder, Jeffrey F.; Baum, Thomas H., Precursor compositions for atomic layer deposition and chemical vapor deposition of titanate, lanthanate, and tantalate dielectric films.
상세보기
Chung,Hua; Ganguli,Seshadri; Marcadal,Christophe; Yu,Jick M., Reduction of copper dewetting by transition metal deposition.
상세보기
Gandikota,Srinivas; Moorthy,Madhu; Khandelwal,Amit; Gelatos,Avgerinos V.; Chang,Mei; Shah,Kavita; Ganguli,Seshadri, Ruthenium as an underlayer for tungsten film deposition.
상세보기
Wang, Zheng; Wang, Connie; Wilson, Erik; Yu, Wen; Chiu, Robert, Ruthenium interconnect with high aspect ratio and method of fabrication thereof.
상세보기
Chang,Mei; Ganguli,Seshadri; Maity,Nirmalya, Ruthenium layer formation for copper film deposition.
상세보기
Gandikota, Srinivas; Moorthy, Madhu; Khandelwal, Amit; Gelatos, Avgerinos V.; Chang, Mei; Shah, Kavita; Ganguli, Seshadri, Ruthenium or cobalt as an underlayer for tungsten film deposition.
상세보기
Felthouse, Timothy R.; Bino, Abraham, Ruthenium oxide catalysts for conversion of sulfur dioxide to sulfur trioxide.
상세보기
Lyons, Karen Swider; Rolison, Debra Rose, Selective deposition of hydrous ruthenium oxide thin films.
상세보기
Cameron, Thomas M.; DiMeo, Susan V.; Hendrix, Bryan C.; Li, Weimin, Silylene compositions and methods of use thereof.
상세보기
Gatineau, Julien; Dussarrat, Christian, Use of ruthenium tetroxide as a precursor and reactant for thin film depositions.
상세보기

활용도 분석정보

상세보기

다운로드

내보내기

활용도 Top5 특허

해당 특허가 속한 카테고리에서 활용도가 높은 상위 5개 콘텐츠를 보여줍니다.
더보기 버튼을 클릭하시면 더 많은 관련자료를 살펴볼 수 있습니다.

내보내기 메뉴

내보내기 구분

파일저장
인쇄
메일전송

구성항목

기본정보
상세정보

관리번호, 국가코드, 자료구분, 상태, 출원번호, 출원일자, 공개번호, 공개일자, 등록번호, 등록일자, 발명명칭(한글), 발명명칭(영문), 출원인(한글), 출원인(영문), 출원인코드, 대표IPC

저장형식

Text(ASCII format)
Excel format
PIAS분석(.xls)

메일정보

받는사람 (필수): @
보내는사람 (선택): @
제목
내용: KISTI 검색결과 이메일 서비스

안내

총 건의 자료가 검색되었습니다.

다운받으실 자료의 인덱스를 입력하세요. (1-10,000)

검색결과의 순서대로 최대 10,000건 까지 다운로드가 가능합니다.

데이타가 많을 경우 속도가 느려질 수 있습니다.(최대 2~3분 소요)

다운로드 파일은 UTF-8 형태로 저장됩니다.
파일의 내용이 제대로 보이지 않을실 때는 웹브라우저 상단의 보기 -> 인코딩 -> 자동선택 여부를 확인하십시오.

Text(ASCII format)
Excel format

AI-Helper ※ AI-Helper는 을 사용합니다.

AI-Helper

안녕하세요, AI-Helper입니다. 좌측 "선택된 텍스트"에서 텍스트를 선택하여 요약, 번역, 용어설명을 실행하세요.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.

IPC	Description
A	생활필수품
A62	인명구조; 소방(사다리 E06C)
A62B	인명구조용의 기구, 장치 또는 방법(특히 의료용에 사용되는 밸브 A61M 39/00; 특히 물에서 쓰이는 인명구조 장치 또는 방법 B63C 9/00; 잠수장비 B63C 11/00; 특히 항공기에 쓰는 것, 예. 낙하산, 투출좌석 B64D; 특히 광산에서 쓰이는 구조장치 E21F 11/00)
A62B-1/08	.. 윈치 또는 풀리에 제동기구가 있는 것

연합인증

[미국특허] CVD ruthenium seed for CVD ruthenium deposition 원문보기