초록 ▼

The invention provides a thin-film transferring method, which can separate a thin film from a supply substrate and transfer it to a demand substrate. The method is practiced first by a process of ion implantation, which implants ions in a supply substrate to form an ion separation layer under implan

The invention provides a thin-film transferring method, which can separate a thin film from a supply substrate and transfer it to a demand substrate. The method is practiced first by a process of ion implantation, which implants ions in a supply substrate to form an ion separation layer under implanted surface, and then followed by a wafer-bonding method, which joins the supply substrate with a demand substrate. The resulting bonded structure is to be going through a high-energy ion activation activity, in which the implanted ions incorporate into aerial particles, which fill the cleaves, resulting in a separation film, which is to be transferred to the demand substrate in wafer bonding process. As a part of this invention, the cooling device can remove the heat current produced from the high-energy ion activation, so as to prevent the bonded structure-made from different materials-being damaged by heat due to the different thermal expansion coefficient.

대표청구항 ▼

1. A thin film transferring method comprising:providing a supply substrate; performing an ion implantation process to form an ion separation layer in the supply substrate, the ion separation layer defining the following layers in the supply substrate: a thin film, which is a predetermined portion of

1. A thin film transferring method comprising:providing a supply substrate; performing an ion implantation process to form an ion separation layer in the supply substrate, the ion separation layer defining the following layers in the supply substrate: a thin film, which is a predetermined portion of the supply substrate into which ions are implanted; and a remnant substrate, which is the remaining portion of the supply substrate without the thin film; performing a wafer bonding process to bond a demand substrate onto the supply substrate, forming a bonded structure; and using a high frequency alternating electric field, or a high frequency alternating electromagnetic field, to separate the thin film from the remnant substrate, the thin film transferring from the surface of the supply substrate to the surface of the demand substrate.