초록 ▼

A method for forming dual-damascene type conducting interconnects with non-metallic barriers that protect said interconnects from fluorine out-diffusion from surrounding low-k, fluorinated dielectric materials. One embodiment of the method is particularly suited for forming such interconnects in mic

A method for forming dual-damascene type conducting interconnects with non-metallic barriers that protect said interconnects from fluorine out-diffusion from surrounding low-k, fluorinated dielectric materials. One embodiment of the method is particularly suited for forming such interconnects in microelectronics fabrications of the sub 0.15 micron generation.

대표청구항 ▼

1. A method for forming a dual-damascene type conducting interconnect within a microelectronics fabrication, comprising:providing a layered structure such as is used in a microelectronics fabrication, said structure comprising a conducting layer, on which has been formed a passivating layer, on whic

1. A method for forming a dual-damascene type conducting interconnect within a microelectronics fabrication, comprising:providing a layered structure such as is used in a microelectronics fabrication, said structure comprising a conducting layer, on which has been formed a passivating layer, on which has been formed a first dielectric layer, on which has been formed a second dielectric layer and on which has been formed a capping layer; patterning and etching a trench and via structure that passes through said capping layer, said second dielectric layer and said first dielectric layer and extends, thereby, to said passivating layer; forming a non-metallic layer of fluorine diffusion resistant material over all surfaces of said trench and via formation such that said non-metallic layer conformally covers said surfaces; etching away portions of said non-metallic layer of fluorine diffusion resistant material to form a fluorine diffusion resistant barrier "spacer" over the side-walls of said trench and via formation; etching away the exposed portion of said passivation layer to expose the conducting layer; forming a metallic barrier layer over all surfaces of said trench and via formation such that said metallic barrier layer conformally covers said surfaces; depositing copper over all surfaces of said trench and via formation.