초록 ▼

Disclosed is a structure and process for incorporating air or other gas as a permanent dielectric medium in a multilevel chip by providing CVD diamond as a semi-sacrificial interlevel and intralevel dielectric material. The semi-sacrificial dielectric is subsequently at least partially removed in an

Disclosed is a structure and process for incorporating air or other gas as a permanent dielectric medium in a multilevel chip by providing CVD diamond as a semi-sacrificial interlevel and intralevel dielectric material. The semi-sacrificial dielectric is subsequently at least partially removed in an isotropic oxygen etch. A variation of the disclosure includes providing a final, permanent CVD diamond encapsulant to contain the gaseous dielectric medium within the chip.

대표청구항 ▼

1. A process for providing a gaseous dielectric medium within a multilevel interconnect integrated circuit chip, comprising the steps of:a. providing a multilevel interconnect integrated circuit chip structure which includes a CVD diamond semi-sacrificial dielectric medium; b. providing a hard mask

1. A process for providing a gaseous dielectric medium within a multilevel interconnect integrated circuit chip, comprising the steps of:a. providing a multilevel interconnect integrated circuit chip structure which includes a CVD diamond semi-sacrificial dielectric medium; b. providing a hard mask final layer including a plurality of openings at preselected sites; and c. removing the semi-sacrificial dielectric medium through any of the plurality of openings in the hard mask final layer by etching in an isotropic oxygen-containing gas, a gaseous dielectric medium thereby replacing the semi-sacrificial dielectric medium.