초록 ▼

A low dielectric constant, thermally stable hydrogenated oxidized silicon carbon film which can be used as an interconnect dielectric in IC chips is disclosed. Also disclosed is a method for fabricating a thermally stable hydrogenated oxidized silicon carbon low dielectric constant film utilizing a

A low dielectric constant, thermally stable hydrogenated oxidized silicon carbon film which can be used as an interconnect dielectric in IC chips is disclosed. Also disclosed is a method for fabricating a thermally stable hydrogenated oxidized silicon carbon low dielectric constant film utilizing a plasma enhanced chemical vapor deposition technique. Electronic devices containing insulating layers of thermally stable hydrogenated oxidized silicon carbon low dielectric constant materials that are prepared by the method are further disclosed. To enable the fabrication of thermally stable hydrogenated oxidized silicon carbon low dielectric constant film, specific precursor materials having a ring structure are preferred.

대표청구항

1. A material comprising Si, C, O and H, said composition having a non-polymeric, covalently bonded structure comprising Si-C, Si-H, Si-O and C-H bonds and a dielectric constant of not more than 3.6.

1. A material comprising Si, C, O and H, said composition having a non-polymeric, covalently bonded structure comprising Si-C, Si-H, Si-O and C-H bonds and a dielectric constant of not more than 3.6.