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Removal of photoresist and residue from substrate using supercritical carbon dioxide process 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • G03F-007/42
출원번호 US-0697227 (2000-10-25)
발명자 / 주소
  • William H. Mullee
  • Maximilian A. Biberger
  • Paul E. Schilling
출원인 / 주소
  • Tokyo Electron Limited JP
대리인 / 주소
    Haverstock & Owens LLP
인용정보 피인용 횟수 : 49  인용 특허 : 129

초록

A method of removing photoresist and residue from a substrate begins by maintaining supercritical carbon dioxide, an amine, and a solvent in contact with the substrate so that the amine and the solvent at least partially dissolve the photoresist and the residue. Preferably, the amine is a tertiary a

대표청구항

1. A method of processing a substrate comprising the steps of:a. maintaining supercritical carbon dioxide and an aqueous fluoride in contact with the substrate, the substrate having a silicon dioxide surface which supports a material selected from the group consisting of photoresist, photoresist res

이 특허에 인용된 특허 (129)

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  44. Bertram, Ronald Thomas; Scott, Douglas Michael, Removal of contaminants from a fluid.
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  46. Fury,Michael A.; Sherrill,Robert Wade, System and method for mid-pressure dense phase gas and ultrasonic cleaning.
  47. Jacobson,Gunilla; Yellowaga,Deborah, Treatment of a dielectric layer using supercritical CO.
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