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Overlap design of one-turn coil 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C23C-014/32
출원번호 US-0039695 (1998-03-16)
발명자 / 주소
  • Ding, Peijun
출원인 / 주소
  • Applied Materials, Inc.
대리인 / 주소
    Konrad Raynes Victor & Mann LLP
인용정보 피인용 횟수 : 14  인용 특허 : 35

초록

A coil for inductively coupling RF energy to a plasma in a substrate processing chamber has adjacent spaced and overlapping ends to improve uniformity of processing of the substrate.

대표청구항

A coil for inductively coupling RF energy to a plasma in a substrate processing chamber has adjacent spaced and overlapping ends to improve uniformity of processing of the substrate. ond coupler includes spaced bushings on opposite sides of the circumferential groove and the rearward clamp of the dr

이 특허에 인용된 특허 (35)

  1. Edelstein Sergio ; Subramani Mani, Active shield for generating a plasma for sputtering.
  2. Shufflebotham Paul K. (Fremont CA) Hartsough Larry D. (Berkeley CA) Denison Dean R. (San Jose CA), Apparatus and method for magnetron in-situ cleaning of plasma reaction chamber.
  3. Mintz Donald M. (Sunnyvale CA), Apparatus and method for manufacturing planarized aluminum films.
  4. Clarke Andrew P. (Carpinteria CA), Apparatus for depositing a thin layer of sputtered atoms on a member.
  5. Barnes Michael S. (Mahopac NY) Forster John C. (Poughkeepsie NY) Keller John H. (Newburgh NY), Apparatus for depositing material into high aspect ratio holes.
  6. Cuomo Jerome J. (Lincolndale NY) Guarnieri C. Richard (Somer NY) Hopwood Jeffrey A. (Brewster NY), Apparatus for enhanced inductive coupling to plasmas with reduced sputter contamination.
  7. Ngan Kenny King-Tai, Avoiding contamination from induction coil in ionized sputtering.
  8. Patrick Roger (Santa Clara CA) Bose Frank (Wettingen CA CHX) Schoenborn Philippe (San Jose CA) Toda Harry (Santa Clara CA), Coil configurations for improved uniformity in inductively coupled plasma systems.
  9. Ishii Nobuo (Yamanashi-ken JPX) Shinohara Kibatsu (Yokohama JPX), Concentric rings with different RF energies applied thereto.
  10. Mller Karl-Heinz (Wissen DEX), Continuous tensioning ring for mounting convoluted boots.
  11. Araki Yoichi,JPX ; Inazawa Koichiro,JPX ; Furuya Sachiko,JPX ; Ogasawara Masahiro,JPX ; Koshimizu Chishio,JPX ; Song Tiejun,JPX, Etching process.
  12. Stevens Joe ; Grunes Howard ; Kogan Igor, High aspect ratio clamp ring.
  13. Class Walter H. (Yonkers NY) Hurwitt Steven D. (Park Ridge NJ) Hill Michael L. (New York NY) Hutt Marvin K. (Oakland NJ), Magnetically enhanced plasma process and apparatus.
  14. Oetiker Hans (Horgen CHX), Method for connecting two parts along abutting edges and connection obtained thereby.
  15. Nihei Masayasu (Hitachi JPX) Onuki Jin (Hitachi JPX) Koubuchi Yasushi (Hitachi JPX) Miyazaki Kunio (Hitachi JPX) Itagaki Tatsuo (Tokyo JPX), Method of and apparatus for sputtering.
  16. Tobe Ryoki,JPX ; Sasaki Masao,JPX ; Sekiguchi Atsushi,JPX ; Takagi Ken-ichi,JPX, Method of depositing titanium-containing conductive thin film.
  17. Chen Ching-Hwa (Milpitas CA) Yin Gerald (Cupertino CA) Inoue Takashi (Tokyo JPX), Method of producing flat ECR layer in microwave plasma device and apparatus therefor.
  18. Dible Robert D. (Fremont CA), Methods and apparatus for generating plasma.
  19. Patten James W. (Richland WA) Moss Ronald W. (Richland WA) McClanahan Edwin D. (Richland WA), Methods for making deposited films with improved microstructures.
  20. Savas Stephen E. (Newark CA), Particulate contamination prevention using low power plasma.
  21. Rakestraw Roger (8315 S. Rte. 53 Woodridge IL 60515) Rakestraw Donald L. (47 Cambridge La. Lincolnshire IL 60015), Personalized identification band.
  22. Tracy David H. (Norwalk CT), Plasma etching system for minimizing stray electrical discharges.
  23. Ishii Nobuo (Yamanashi-ken JPX), Plasma processing apparatus.
  24. Takagi Ken-ichi (Tachikawa JPX), Plasma processing apparatus.
  25. Yoshida Kazuyoshi (Tokyo JPX) Miyamoto Hidenobu (Tokyo JPX), Plasma processing apparatus for manufacture of semiconductor devices.
  26. Higuchi Kimihiro,JPX ; Koshimizu Chishio,JPX ; Koshi Ryoichiro,JPX ; Iwata Teruo,JPX ; Ishii Nobuo,JPX, Plasma processing method, plasma processing apparatus, and plasma generating apparatus.
  27. Ashtiani Kaihan Abidi (Nanuet NY), Plasma producing method and apparatus including an inductively-coupled plasma source.
  28. Paranjpe Ajit P. (Dallas TX), Plasma source and method of manufacturing.
  29. Paranjpe Ajit P. (Plano TX), RF induction plasma source for plasma processing.
  30. Skinner William O. (Grabill IN), Radially expandable locking sleeve device.
  31. Kraus Werner (Garching DEX), Self-supporting insulated conductor arrangement suitable for arrangement in a vacuum container.
  32. Collins Kenneth S. (San Jose CA) Roderick Craig A. (San Jose CA) Trow John R. (Santa Clara CA) Yang Chan-Lon (Los Gatos CA) Wong Jerry Y. (Fremont CA) Marks Jeffrey (San Jose CA) Keswick Peter R. (Ne, Silicon scavenger in an inductively coupled RF plasma reactor.
  33. Ogle John (Milpitas CA) Yin Gerald Z. (San Jose CA), Split-phase driver for plasma etch system.
  34. Morrison ; Jr. Charles F. (Boulder CO), Sputtering method and apparatus utilizing improved ion source.
  35. Matsuoka Morito (Katsuta JPX) Ono Ken\ichi (Mito JPX), Thin film forming apparatus and ion source utilizing plasma sputtering.

이 특허를 인용한 특허 (14)

  1. Metzner, Craig R.; Kher, Shreyas S.; Gopal, Vidyut; Han, Shixue; Athreya, Shankarram A., ALD metal oxide deposition process using direct oxidation.
  2. Metzner, Craig R.; Kher, Shreyas S.; Gopal, Vidyut; Han, Shixue; Athreya, Shankarram A., ALD metal oxide deposition process using direct oxidation.
  3. Nulman, Jaim; Edelstein, Sergio; Subramani, Mani; Xu, Zheng; Grunes, Howard E.; Tepman, Avi; Forster, John C.; Gopalraja, Praburam, Coils for generating a plasma and for sputtering.
  4. Lee, Eal; Truong, Nicole; Prater, Robert; Sand, Norm, Coils utilized in vapor deposition applications and methods of production.
  5. Narwankar, Pravin K.; Higashi, Gregg, Formation of a silicon oxynitride layer on a high-k dielectric material.
  6. Miller, Keith A.; Xu, Genhua; Zhong, Shengde; Lokhande, Mahendra Bhagwat, Interior antenna for substrate processing chamber.
  7. Chua, Thai Cheng; Hung, Steven; Liu, Patricia M.; Sato, Tatsuya; Paterson, Alex M.; Todorov, Valentin; Holland, John P., Method and apparatus for fabricating a high dielectric constant transistor gate using a low energy plasma system.
  8. Olsen, Christopher Sean; Chua, Thai Cheng; Hung, Steven; Liu, Patricia M.; Sato, Tatsuya; Paterson, Alex M.; Todorow, Valentin; Holland, John P., Method and apparatus for fabricating a high dielectric constant transistor gate using a low energy plasma system.
  9. Chua, Thai Cheng; Paterson, Alex M.; Hung, Steven; Liu, Patricia M.; Sato, Tatsuya; Todorow, Valentin; Holland, John P., Method of fabricating a high dielectric constant transistor gate using a low energy plasma apparatus.
  10. Gopalraja, Praburam; Fu, Jianming; Tang, Xianmin; Forster, John C.; Kelkar, Umesh, Self-ionized and capacitively-coupled plasma for sputtering and resputtering.
  11. Gopalraja,Praburam; Fu,Jianming; Tang,Xianmin; Forster,John C.; Kelkar,Umesh, Self-ionized and capacitively-coupled plasma for sputtering and resputtering.
  12. Ding, Peijun; Tao, Rong; Xu, Zheng; Lubben, Daniel C.; Rengarajan, Suraj; Miller, Michael A.; Sundarrajan, Arvind; Tang, Xianmin; Forster, John C.; Fu, Jianming; Mosely, Roderick C.; Chen, Fusen; Gopalraja, Praburam, Self-ionized and inductively-coupled plasma for sputtering and resputtering.
  13. Ding, Peijun; Tao, Rong; Xu, Zheng; Lubben, Daniel C.; Rengarajan, Suraj; Miller, Michael A.; Sundarrajan, Arvind; Tang, Xianmin; Forster, John C.; Fu, Jianming; Mosely, Roderick C.; Chen, Fusen; Gopalraja, Praburam, Self-ionized and inductively-coupled plasma for sputtering and resputtering.
  14. Ding, Peijun; Tao, Rong; Xu, Zheng; Lubben, Daniel C.; Rengarajan, Suraj; Miller, Michael A.; Sundarrajan, Arvind; Tang, Xianmin; Forster, John C.; Fu, Jianming; Mosely, Roderick C.; Chen, Fusen; Gopalraja, Praburam, Self-ionized and inductively-coupled plasma for sputtering and resputtering.
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