초록 ▼

Efficient channel switching procedures are provided in a mobile communications system. A first channel is established to support a connection through a radio access network to a mobile station. Subsequently, if the first channel is no longer used to support that connection, a portion of that first c

Efficient channel switching procedures are provided in a mobile communications system. A first channel is established to support a connection through a radio access network to a mobile station. Subsequently, if the first channel is no longer used to support that connection, a portion of that first channel is nevertheless maintained for a period of time. That way, if the first channel is again needed to support the connection to the mobile station, the maintained portion of the first channel is simply reactivated thereby reducing channel switching costs and delays associated with channel set-up and release operations. The portion of the first channel that is maintained may be associated with resources within the radio access network. Another portion of the first channel, corresponding for example to a radio channel resource supporting the connection between the radio access network and the mobile station, may be released after the first channel is no longer being used to support the connection in order to make that radio channel resource available for other mobile connections.

대표청구항 ▼

Efficient channel switching procedures are provided in a mobile communications system. A first channel is established to support a connection through a radio access network to a mobile station. Subsequently, if the first channel is no longer used to support that connection, a portion of that first c

Efficient channel switching procedures are provided in a mobile communications system. A first channel is established to support a connection through a radio access network to a mobile station. Subsequently, if the first channel is no longer used to support that connection, a portion of that first channel is nevertheless maintained for a period of time. That way, if the first channel is again needed to support the connection to the mobile station, the maintained portion of the first channel is simply reactivated thereby reducing channel switching costs and delays associated with channel set-up and release operations. The portion of the first channel that is maintained may be associated with resources within the radio access network. Another portion of the first channel, corresponding for example to a radio channel resource supporting the connection between the radio access network and the mobile station, may be released after the first channel is no longer being used to support the connection in order to make that radio channel resource available for other mobile connections. electrically suspended state between said channel portion and said control gate portion; and a ninth voltage achieving a level higher than a reference voltage is applied to said control gate portion, a tenth voltage achieving a level lower than said reference voltage is applied to said channel portion, an eleventh voltage achieving a level lower than said tenth voltage and said reference voltage are alternately applied to said source portion and a twelfth voltage achieving a level lower than said tenth voltage and a said reference voltage are alternately applied to said drain portion, at each of one or a plurality of selected memory cell selected from said plurality of memory cells by said decoder. 2. A semiconductor memory system having a plurality of memory cells which is formed in a semiconductor substrate and a decoder that selects one or more memory cells from said plurality of memory cells, wherein; said memory cells each comprise; a channel portion formed in said substrate; a source portion formed in said substrate; a drain portion formed in said substrate; a control gate portion; and a floating gate portion which is in an electrically suspended state between said channel portion and said control gate portion; and a thirteenth voltage achieving a level higher than a reference voltage is applied to said control gate portion, a fourteenth voltage achieving a level lower than said reference voltage is applied to said channel portion, said reference voltage is applied to said source portion and a fifteenth voltage achieving a level lower than said fourteenth voltage and said reference voltage are alternately applied to said drain portion, at each selected memory cell selected from said plurality of memory cells by said decoder. 3. A semiconductor memory system according to claim 2, wherein; a sixteenth voltage is applied to said control gate portion and said channel portion of each of one or a plurality of unselected memory cells that have not been selected by said decoder from said plurality of memory cells. 4. A semiconductor memory system according to claim 3, wherein; said sixteenth voltage achieves a level roughly equal to the level of said fourteenth voltage. 5. A semiconductor memory system according to claim 2, wherein; a seventeenth voltage achieving a level equal to or higher than the voltage applied to said channel portion is applied to said drain portion of each of one or a plurality of unselected memory cells that have not been selected by said decoder from said plurality of memory cells. 6. A semiconductor memory system according to claim 5, wherein; said seventeenth voltage achieves a level roughly equal to the level of said reference voltage.