[특허]Removal of photoresist and photoresist residue from semiconductors using supercritical carbon dioxide process

Removal of photoresist and photoresist residue from semiconductors using supercritical carbon dioxide process 원문보기

IPC분류정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	G03F-007/42
출원번호	US-0389788 (1999-09-03)
발명자 / 주소	Mullee, William H.
출원인 / 주소	Tokyo Electron Limited
대리인 / 주소	Haverstock & Owens LLP
인용정보	피인용 횟수 : 44 인용 특허 : 116

초록 ▼

대표청구항 ▼

A method of removing a photoresist or a photoresist residue from a semiconductor substrate is disclosed. The semiconductor substrate with the photoresist or the photoresist residue on a surface of the semiconductor substrate is placed within a pressure chamber. The pressure chamber is then pressurized. Supercritical carbon dioxide and a stripper chemical are introduced to the pressure chamber. The supercritical carbon dioxide and the stripper chemical are maintained in contact with the photoresist or the photoresist residue until the photoresist or the photoresist residue is removed from the semiconductor substrate. The pressure chamber is then flushed and vented. t-sensitive silver-halide emulsion, binder, an incorporated developer or developer precursor, and at least one fluorophore capable of luminescence. 12. The photographic recording process of claim 11, wherein the illumination and detection occurs on either or both sides of the film. 13. The photographic recording process of claim 1, in which there is a straight line optical path between the illuminant source and the detector. 14. The photographic recording process of claim 1, wherein imagewise transmittance of the film is also detected. 15. The photographic recording process of claim 14, wherein the transmitted light is white light. 16. The process of claim 1, wherein an interference filter is used in the optical path between the film and the detector in order to isolate the emitted light in the presence of the scattered or transmitted exciting light. 17. The process of claim 16, wherein an interference filter is also used in the optical path between the light source and the film to provide the substantially monochromatic light of a wavelength suitable for the excitation of the luminescence of said fluorophore. 18. The process of claim 1 wherein the photographic recording material has a transparent or translucent substrate that allows the passage of a beam of monochromatic light of a wavelength suitable for the excitation of the luminescence. 19. The process of claim 11 wherein the imaging layers of three different colors are developed and detected as in (b) and (c). 20. The process of claim 1, where the fluorophore is uniformly distributed separately from silver halide crystals in the imaging layer and is not used to sensitize the silver halide. 21. The process of claim 1, where the fluorophore is a spectral sensitizer absorbed on silver halide in the imaging layer. 22. The process of claim 1, wherein the fluorophore exhibits a molar extinction coefficient greater than 104liters/mole-cm. 23. The process of claim 1, wherein the fluorophore exhibit high quantum yield for emission of greater than ten percent. 24. The process of claim 1, wherein the Stokes shift of the fluorophore is greater than 30 nanometers. 25. The process of claim 1, wherein the fluorophore exhibit absorption band of less than 100 nm. 26. The process of claim 1, wherein the fluorophore exhibits an emission band of less than 150 nm. 27. The method of claim 1 wherein the developer precursor is a blocked developing agent that forms an oxidized developing agent that develops the silver halide latent image to form a silver image and, at the same time, produces a latent luminescence image. 28. The method of claim 1 wherein the initial detection is in a kiosk. 29. The method of claim 11, wherein a color print is generated by thermal-diffusion or ink-jet printing. 30. The method of claim 1 wherein step (c) comprises the following steps: forming an analog electronic representation of said developed image; digitizing said analog electronic representation to form a digital image; digitally modifying said digital image; and storing, transmitting, printing, or displaying said modified digital image. 31. A photographic recording process employing a film comprising at least one imaging layer comprising a light-sensitive silver-halide emulsion, binder, an incorporated developer or developer precursor, and at least one fluorophore capable of luminescence, wherein the fluorophore is used in the amount of 10-9to 10-3mol/m2in said imaging layerwhere the fluorophore is uniformly distributed separately from the silver halide crystals in the imaging layer and is not used to sensitize the silver halide and wherein the fluorophore exhibits a molar extinction coefficient greater than 104liters/mole-cm and a quantum yield for emission of greater than ten percent, and a Stokes shift of the fluorophore is greater than 30 nanometers, which method in order comprises: (a) imagewise exposing the film in a camera; (b) thermall

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Wang, Chien-Wei; Chang, Ching-Yu, Method for manufacturing a semiconductor device using a modified photosensitive layer.
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Biberger, Maximilian Albert; Layman, Frederick Paul; Sutton, Thomas Robert, Method for supercritical processing of multiple workpieces.
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Biberger,Maximilian A.; Schilling,Paul E., Method of depositing metal film and metal deposition cluster tool including supercritical drying/cleaning module.
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Hillman,Joseph, Method of inhibiting copper corrosion during supercritical COcleaning.
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Toma,Dorel Ioan; Schilling,Paul, Method of passivating of low dielectric materials in wafer processing.
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Biberger,Maximilian Albert; Layman,Frederick Paul; Sutton,Thomas Robert, Method of supercritical processing of a workpiece.
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Schilling,Paul, Method of treating a composite spin-on glass/anti-reflective material prior to cleaning.
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Schilling,Paul, Method of treatment of porous dielectric films to reduce damage during cleaning.
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Sheydayi,Alexei, Non-contact shuttle valve for flow diversion in high pressure systems.
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Korzenski, Michael B.; Baum, Thomas H., Non-fluoride containing supercritical fluid composition for removal of ion-implant photoresist.
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Crawford,Shaun; Huynh,Cuc K.; Reid,A. Gary; Smith,Adam C.; Wagner,Thomas M., Photoresist trimming process.
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Sheydayi,Alexei, Pressure energized pressure vessel opening and closing device and method of providing therefor.
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Wuester,Christopher D., Process flow thermocouple.
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Mullee,William H.; de Leeuwe,Marc; Roberson, Jr.,Glenn A.; Palmer,Bentley J., Removal of CMP and post-CMP residue from semiconductors using supercritical carbon dioxide process.
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Bertram, Ronald Thomas; Scott, Douglas Michael, Removal of contaminants from a fluid.
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Korzenski,Michael B.; Ghenciu,Eliodor G.; Xu,Chongying; Baum,Thomas H., Supercritical carbon dioxide/chemical formulation for ashed and unashed aluminum post-etch residue removal.
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Chang,Ching Yu; Lin,Burn Jeng; Liu,Chi Wen, Supercritical developing for a lithographic process.
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Roeder,Jeffrey F.; Baum,Thomas H.; Healy,Matthew; Xu,Chongying, Supercritical fluid-based cleaning compositions and methods.
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Shih,Jen Chieh, System and method for manufacturing semiconductor devices using a vacuum chamber.
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Fury,Michael A.; Sherrill,Robert Wade, System and method for mid-pressure dense phase gas and ultrasonic cleaning.
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Jacobson,Gunilla; Yellowaga,Deborah, Treatment of a dielectric layer using supercritical CO.
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Xu,Chongying; Minsek,David W.; Baum,Thomas H.; Healy,Matthew, Treatment of semiconductor substrates using long-chain organothiols or long-chain acetates.
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Kevwitch, Robert, Treatment of substrate using functionalizing agent in supercritical carbon dioxide.
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Sheydayi,Alexei, Vacuum chuck utilizing sintered material and method of providing thereof.
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IPC	Description
A	생활필수품
A62	인명구조; 소방(사다리 E06C)
A62B	인명구조용의 기구, 장치 또는 방법(특히 의료용에 사용되는 밸브 A61M 39/00; 특히 물에서 쓰이는 인명구조 장치 또는 방법 B63C 9/00; 잠수장비 B63C 11/00; 특히 항공기에 쓰는 것, 예. 낙하산, 투출좌석 B64D; 특히 광산에서 쓰이는 구조장치 E21F 11/00)
A62B-1/08	.. 윈치 또는 풀리에 제동기구가 있는 것

내보내기 구분	파일저장 인쇄 메일전송
구성항목	기본정보 상세정보 관리번호, 국가코드, 자료구분, 상태, 출원번호, 출원일자, 공개번호, 공개일자, 등록번호, 등록일자, 발명명칭(한글), 발명명칭(영문), 출원인(한글), 출원인(영문), 출원인코드, 대표IPC 관리번호, 국가코드, 자료구분, 상태, 출원번호, 출원일자, 공개번호, 공개일자, 공고번호, 공고일자, 등록번호, 등록일자, 발명명칭(한글), 발명명칭(영문), 출원인(한글), 출원인(영문), 출원인코드, 대표출원인, 출원인국적, 출원인주소, 발명자, 발명자E, 발명자코드, 발명자주소, 발명자 우편번호, 발명자국적, 대표IPC, IPC코드, 요약, 미국특허분류, 대리인주소, 대리인코드, 대리인(한글), 대리인(영문), 국제공개일자, 국제공개번호, 국제출원일자, 국제출원번호, 우선권, 우선권주장일, 우선권국가, 우선권출원번호, 원출원일자, 원출원번호, 지정국, Citing Patents, Cited Patents
저장형식	Text(ASCII format) Excel format PIAS분석(.xls)
메일정보	받는사람 (필수) @ 보내는사람 (선택) @ 제목 내용 KISTI 검색결과 이메일 서비스
안내	총 건의 자료가 검색되었습니다. 다운받으실 자료의 인덱스를 입력하세요. (1-10,000) 검색결과의 순서대로 최대 10,000건 까지 다운로드가 가능합니다. 데이타가 많을 경우 속도가 느려질 수 있습니다.(최대 2~3분 소요) 다운로드 파일은 UTF-8 형태로 저장됩니다. 파일의 내용이 제대로 보이지 않을실 때는 웹브라우저 상단의 보기 -> 인코딩 -> 자동선택 여부를 확인하십시오. ~ Text(ASCII format) Excel format

연합인증

Removal of photoresist and photoresist residue from semiconductors using supercritical carbon dioxide process 원문보기

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연합인증

Removal of photoresist and photoresist residue from semiconductors using supercritical carbon dioxide process 원문보기

초록 ▼

대표청구항 ▼

연구과제 타임라인

전체(0) 논문(0) 특허(0) 보고서(0)

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이 특허를 인용한 특허 (44)

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