초록

An improved highly doped waveguide is provided which comprises a waveguide having a dopant disposed therein, the dopant having a concentration of between 100 and 500,000 ppm, and wherein the concentration of the dopant enhances cross-relaxation between two elements of the dopant.

대표청구항 ▼

An improved highly doped waveguide is provided which comprises a waveguide having a dopant disposed therein, the dopant having a concentration of between 100 and 500,000 ppm, and wherein the concentration of the dopant enhances cross-relaxation between two elements of the dopant. claim 14, wherein t

An improved highly doped waveguide is provided which comprises a waveguide having a dopant disposed therein, the dopant having a concentration of between 100 and 500,000 ppm, and wherein the concentration of the dopant enhances cross-relaxation between two elements of the dopant. claim 14, wherein the at least one optical structure comprises a waveguide. 18. The device of claim 17, further comprising a nitride layer formed on at least a portion of the waveguide. 19. The device of claim 14, wherein the silicon layer is a single-crystal-silicon layer. 20. The device of claim 19, further comprising: a substrate; and an insulator layer disposed between the substrate and the single-crystal-silicon layer.