IPC분류정보
국가/구분 |
United States(US) Patent
등록
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국제특허분류(IPC7판) |
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출원번호 |
US-0650779
(2000-08-29)
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발명자
/ 주소 |
- Blalock, Guy T.
- Stroupe, Hugh E.
- Carroll, Lynn J.
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출원인 / 주소 |
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대리인 / 주소 |
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인용정보 |
피인용 횟수 :
8 인용 특허 :
50 |
초록
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A method of manufacturing semiconductor devices using an improved planarization processes for the planarization of the surfaces of the wafer on which the semiconductor devices are formed. The improved planarization process includes the formation of a flat planar surface from a deformable coating on
A method of manufacturing semiconductor devices using an improved planarization processes for the planarization of the surfaces of the wafer on which the semiconductor devices are formed. The improved planarization process includes the formation of a flat planar surface from a deformable coating on the surface of the wafer using a fixed resilient flexible material member contacting the wafer.
대표청구항
▼
A method of manufacturing semiconductor devices using an improved planarization processes for the planarization of the surfaces of the wafer on which the semiconductor devices are formed. The improved planarization process includes the formation of a flat planar surface from a deformable coating on
A method of manufacturing semiconductor devices using an improved planarization processes for the planarization of the surfaces of the wafer on which the semiconductor devices are formed. The improved planarization process includes the formation of a flat planar surface from a deformable coating on the surface of the wafer using a fixed resilient flexible material member contacting the wafer. ppm. 9. A bump formation method as claimed in claim 1, wherein the flux vehicle further contains an activator, and this activator contains at least one type of organic acid or organic amine selected from the group consisting of sebacic acid, succinic acid, adipic acid, glutaric acid, triethanolamine, and monoethanolamine. 10. A bump formation method as claimed in claim 9, wherein the activator is contained in the solder paste in an amount of 0.01 to 2 wt %. 11. A bump formation method as claimed in claim 1, wherein the viscosity of the solder paste is 100 to 400 Pa·s. 12. A bump formation method as claimed in claim 1, wherein the mask is provided over the substrate through the steps of forming a first cover layer over the substrate, forming a second cover layer over this first cover layer, and forming the plurality of openings in the first cover layer and the second cover layer by exposing these to light in a pattern corresponding to the plurality of electrode pads and developing with an etchant, and the first cover layer is formed from a material that will be dissolved by the etchant used to develop the second cover layer, with the etching of the first cover layer being carried out simultaneously with the developing of the second cover layer. 13. A bump formation method as claimed in claim 12, wherein the first cover layer is formed from a material containing a macromolecule that is water-soluble or readily dissolves in an alkaline aqueous solution. 14. A bump formation method as claimed in claim 1, wherein the plurality of electrode pads are divided into a plurality of groups, and the mask is formed through the steps of forming a cover layer so as to cover the plurality of electrode pads, and forming the plurality of openings in this cover layer in a pattern corresponding to the plurality of electrode pads, with the volume of these openings being different for each group. 15. A bump formation method as claimed in claim 14, wherein the cover layer is formed by laying a resin film over the substrate. 16. A bump formation method as claimed in claim 14, wherein the cover layer contains at least one type of component selected from the group consisting of polymethyl methacrylate, polyacrylate, and polymethyl isopropenyl ketone. 17. A bump formation method as claimed in claim 14, wherein the plurality of electrode pads are divided into a group comprising a plurality of first electrode pads and a group comprising a plurality of second electrode pads, each of the first electrode pads being formed in a surface area smaller than each of the second electrode pads, and the plurality of openings include a plurality of first openings formed in a pattern corresponding to the plurality of first electrode pads, and a plurality of second openings each smaller in volume than each of the first openings and formed in a pattern corresponding to the plurality of second electrode pads. 18. A bump formation method as claimed in claim 1, wherein the plurality of electrode pads include a plurality of first electrode pads and a plurality of second electrode pads, and the plurality of openings include a plurality of first openings, a plurality of second openings, and a plurality of third openings, and the mask is formed through the steps of forming a first cover layer by covering the plurality of first electrode pads and exposing the plurality of second electrode pads, forming the plurality of first openings in this first cover layer in a pattern corresponding to the plurality of first electrode pads, forming a second cover layer so as to cover the first cover layer and the plurality of second electrode pads, forming the plurality of second openings in the second cover layer in a pattern corresponding to the plurality of second electrode pads, and forming the plurality of third openings in a pattern corresponding to the plurality of first openings. 19. A bump formation method as claimed in claim 18, wherein each of the first opening s is formed with a larger open surface area than each of the second openings. 20. A bump formation method as claimed in claim 18, wherein each of the third openings is formed with a larger open surface area than each of the first openings, there is further included a step of selectively removing just the second cover layer, and the first cover layer is left on the substrate. 21. A bump formation method as claimed in claim 18, wherein the first cover layer or the second cover layer, or both, is or are formed by laying a resin film over the substrate. 22. A bump formation method as claimed in claim 18, wherein the first cover layer contains at least one type of compound selected from the group consisting of epoxyacrylate, epoxy, and polyimide. 23. A bump formation method as claimed in claim 18, wherein the second cover layer contains at least one type of compound selected from the group consisting of polymethyl methacrylate, polyacrylate, and polymethyl isopropenyl ketone. 24. A bump formation method as claimed in claim 1, wherein the filling of the openings with solder paste is carried out through the steps of holding the substrate on a substrate support, providing squeegeeing helper means for lessening the difference between the height position of the mask and the height position of the periphery of the substrate, readying solder paste on the mask or the squeegeeing helper means, and moving a squeegee to push the solder paste down into the openings. 25. A bump formation method as claimed in claim 24, wherein the height position of the periphery of the substrate is made by the squeegeeing helper means to be the same or substantially the same as the height position of the cover layer. 26. A bump formation method as claimed in claim 24, wherein the squeegeeing helper means is a plate having an opening corresponding to the shape of the substrate. 27. A bump formation method as claimed in claim 24, wherein the substrate support has a recess capable of accommodating at least part of the substrate. 28. A bump formation method as claimed in claim 1, further comprising a step of applying flux to the bumps formed from heat treated solder paste, and performing a heat treatment again to adjust the shape of the bumps. 29. A bump formation method as claimed in claim 28, wherein the flux contains Polypale and hexylene glycol. 30. A bump formation method as claimed in claim 1, wherein the open surface area of each of the openings is no more than 25 times the surface area of the corresponding electrode pad. 31. A bump formation method for forming bumps on a substrate provided with a plurality of electrode pads, comprising the steps of: forming a first cover layer over the substrate; forming a second cover layer over the first cover layer; forming a plurality of openings corresponding to the plurality of electrode pads in the first cover layer and the second cover layer by exposing these to light and developing with an etchant; filling each of the openings with metal; and heating the metal to integrate it with the electrode pads, wherein the first cover layer is formed from a material that will be dissolved by the etchant used to develop the second cover layer, and the first cover layer is etched to form the plurality of openings simultaneously with the developing of the second cover layer. 32. A bump formation method for forming bumps on a substrate provided with a plurality of electrode pads divided into a plurality of groups, comprising the steps of: forming a mask having a plurality of openings corresponding to the plurality of electrode pads such that the size of respective openings is different for each group, the mask having a peripheral edges entirely surrounding all of the electrode pads; filling the openings with solder paste; forming bumps from the solder paste by heat treatment; and removing the mask from the substrate. 33. A bump formation method for forming bumps on a substrate provided with a plurality of
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