초록 ▼

A method and apparatus for high density nanostructures is provided. The method and apparatus include Nano-compact optical disks, such as nano-compact disks (Nano-CDS). In one embodiment a 400 Gbit/in2topographical bit density nano-CD with nearly three orders of magnitude higher than commercial CDS h

A method and apparatus for high density nanostructures is provided. The method and apparatus include Nano-compact optical disks, such as nano-compact disks (Nano-CDS). In one embodiment a 400 Gbit/in2topographical bit density nano-CD with nearly three orders of magnitude higher than commercial CDS has been fabricated using nanoimprint lithography. The reading and wearing of such Nano-CDS have been studied using scanning proximal probe methods. Using a tapping mode, a Nano-CD was read 1000 times without any detectable degradation of the disk or the silicon probe tip. In accelerated wear tests with a contact mode, the damage threshold was found to be 19 μN. This indicates that in a tapping mode, both the Nano-CD and silicon probe tip should have a lifetime that is at least four orders of magnitude longer than that at the damage threshold.

대표청구항 ▼

A method and apparatus for high density nanostructures is provided. The method and apparatus include Nano-compact optical disks, such as nano-compact disks (Nano-CDS). In one embodiment a 400 Gbit/in2topographical bit density nano-CD with nearly three orders of magnitude higher than commercial CDS h

A method and apparatus for high density nanostructures is provided. The method and apparatus include Nano-compact optical disks, such as nano-compact disks (Nano-CDS). In one embodiment a 400 Gbit/in2topographical bit density nano-CD with nearly three orders of magnitude higher than commercial CDS has been fabricated using nanoimprint lithography. The reading and wearing of such Nano-CDS have been studied using scanning proximal probe methods. Using a tapping mode, a Nano-CD was read 1000 times without any detectable degradation of the disk or the silicon probe tip. In accelerated wear tests with a contact mode, the damage threshold was found to be 19 μN. This indicates that in a tapping mode, both the Nano-CD and silicon probe tip should have a lifetime that is at least four orders of magnitude longer than that at the damage threshold. rizing novolac resin is less than 1.4. 2. The film of claim 1, wherein the planarizing resin further comprises an organic solvent. 3. The film of claim 2, wherein the organic solvent comprises at least one of ethyl lactate, ethyl acetate, propyl acetate, and butyl acetate. 4. The film of claim 1, wherein the planarizing novolac resin has a fraction with molecular weight below about 350 amu that is less than about 15% of the total. 5. The film of claim 1, wherein the planarizing novolac resin is a phenolic resin. 6. The film of claim 1, wherein the planarizing novolac resin has a polydispersity of less than about 1.2. 7. The film of claim 1, wherein the surfactant is an ester derivative of a fluorinated hydrocarbon. 8. The film of claim 1, wherein the planarizing novolac resin is spin-coated onto the substrate. 9. The film of claim 1, wherein the substrate comprises silicon. 10. The film of claim 9, wherein the substrate comprises a circuit pattern on the surface of the substrate. 11. An integrated circuit comprising the film of claim 10. 12. A microelectronic device comprising the film of claim 1.