초록 ▼

A connector is formed to connect with the outlet of a humidification chamber. A calibrated tube extends through the connector to be retained in use in at least a substantially vertical direction. A bias flow outlet also extends through the connector. In use the connector of the measuring device is f

A connector is formed to connect with the outlet of a humidification chamber. A calibrated tube extends through the connector to be retained in use in at least a substantially vertical direction. A bias flow outlet also extends through the connector. In use the connector of the measuring device is fitted to the outer port of a humidification water chamber with the calibrated tube extending into the reservoir of water within the chamber. With an air supply to the chamber activated the subsequent water level in the tube indicates the operating pressure of the blower under a flow condition simulating losses through leakage in the breathing circuit and at the patient connection.

대표청구항 ▼

A connector is formed to connect with the outlet of a humidification chamber. A calibrated tube extends through the connector to be retained in use in at least a substantially vertical direction. A bias flow outlet also extends through the connector. In use the connector of the measuring device is f

A connector is formed to connect with the outlet of a humidification chamber. A calibrated tube extends through the connector to be retained in use in at least a substantially vertical direction. A bias flow outlet also extends through the connector. In use the connector of the measuring device is fitted to the outer port of a humidification water chamber with the calibrated tube extending into the reservoir of water within the chamber. With an air supply to the chamber activated the subsequent water level in the tube indicates the operating pressure of the blower under a flow condition simulating losses through leakage in the breathing circuit and at the patient connection. . "Diversity and Feasibility of Direct Bonding: A Survey of a Dedicated Optical Technology", by J. Haisma et al., Applied Optics, vol. 33, No. 7, (Mar. 1994), pp. 1154-1169. "Structure and Morphology of the Reaction Fronts During the Formation of MgAl2O4Thin Films by Solid State Reaction Between R-cut Sapphire Substrates and MgO Films", by D. Hesse et al., Interface Science, (1994) pp. 221-237. "Development of a High Temperature Capacitive Pressure Transducer", by R.L. Egger, NASA CR-135282 (Oct. 1977)., pp. 1-114. "High Temperature Pressure Transducer", Techlink Industry, Techlink No. 2359, (1978), 2 pgs. "Quartz Capsule Pressure Transducer for the Automotive Industry", by D.Y. Lee et al., SAE Technical Paper Series Society of Automotive Engineers, Inc., (Feb. 1981), 6 pgs. "Low-Cost High-Sensitivity Integrated Pressure and Temperature Sensor", by P. Pons et al., Sensors and Actuators, (1994), pp. 398-401. "A New Type of High Performance Device for VLSI Digital System", by X. Xiao-Li et al., Solid State Devices, (1988), pp. 579-582. "Wafer Bonding For SOI", by W.P. Maszara et al., Mat. Res. Soc. Symp. Proc.. vol. 107, (1988), 2 pgs. "Silicon Fusion Bonding For Pressure Sensors", by K. Peterson et al., IEEE, (1988), pp. 146-147. "Silicon-To-Silicon Direct Bonding Method", by M. Shimbo et al., Journal of Applied Physics, vol. 60, No. 8, (Oct. 1986), pp. 2987-2989. "A Model for the Silicon Wafer Bonding Process", by R. Stengl et al., Japanese Journal of Applied Physics, vol. 28, No. 10, (Oct. 1989), pp. 1735 & 1741. "A Small and Stable Continuous Gas Laser", by H.G. Van Bueren et al., Physics Letters vol. 2, No. 7, (Nov. 1962), 2 pgs. "Direct Bonding of Ceramics and Metals by Means of a Surface Activation Method in Ultrahigh Vacuum", by T. Suga et al., Proceedings of the MRS International Meeting on Advanced Materials, vol. 8, (Jun. 1988), pp. 257-263. "Silicon-On-Insulator Wafer Bonding-Wafer Thinning Technological Evaluations", by J. Haisma et al., Japanese Journal of Applied Physics, vol. 28, No. 8, (Aug. 1989), 4 pgs. "Closure and Repropogation of Healed Cracks in Silicate Glass", by T. Michalske et al., Journal of the American Ceramic Society, vol., 68, No. 11, (Nov. 1985), 3 pgs. "Use of Strain Gauges with a Silicon-On-Sapphire Structure for Thermophysical Experiments", by V.F. Kukarin et al., Plenum Publishing Corporation, (1986) pp. 1085-1087. "Metrological Characteristics for Sapfir-22D Pressure Sensors", by A.M. Evtyushenkov et al., Plenum Publishing Corporation, (1989), pp. 147-150. "Low-Temperature Characteristics of the Transducer", Rev. Sci. Instrum., vol. 56, No. 6, (Jun. 1985), pp. 1237-1238. "The Joining of Ceramics", by A.S. Bahrani, Int. J. for the Joining of Materials, vol. 4, No. 1 (1992), pp. 13-19. "Chemical Free Room Temperature Wafer to Wafer Direct Bonding", by S. Farrens et al., J. Electrochem. Soc., vol. 142, No. 11, (Nov. 1985), pp. 3949-3955. "Morphological Evolution of Pore Channels in Alumina", by J. Rodel et al., Ceramic Transactions--Sintering of Advanced Ceramics, vol. 7, (May 1988), pp. 243-257. "Le Poli Optique, Element De La Construction Des Tubes A Vide(')", by P. Danzin et al., Annales De Radioelectricite, (Jan. 1948), pp. 281-289. "Strength of Glass Ceramic S0115M and its Joints Based on Optical Contact", by A.I. Busel et al, Plenum Publishing Corporation, (1983), p. 378. "Bubble-Free Silicon Wafer Bonding in a Non-Cleanroom Environment", by R. Stengl et al., Department of Mechanical Engineering and Materials Science, Duke University, (1988) p. L2364. "Boundary Migration of Single Crystal in Polycrystalline Alumina", by M. Kinoshita, Journal of the Ceramic Society of Japan, vol. 82, No. 945, (1974), pp. 295-296. "Diffusion Bonding of Ceramics", by C. Scott et al., American Ceramic Society Bulletin, (Aug. 1985) pp. 1129-1131. "Creep of Sensor's Elastic Elements: Metals versus Non-metals", K. Bethe, D. Baumgarten and J. Frank, NOVA SENSOR--Si