IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0378869
(1999-08-23)
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발명자
/ 주소 |
- Majagi, Shivanand
- Britzke, Robert W.
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출원인 / 주소 |
|
대리인 / 주소 |
|
인용정보 |
피인용 횟수 :
13 인용 특허 :
16 |
초록
▼
A hard alloy material comprising tungsten carbide in an amount of 50 to 80 weight percent of the material, titanium carbide in an amount of at least about 10 weight percent, and a binder material of cobalt and nickel. Though tungsten carbide based, the thermal conductivity of the material of the inv
A hard alloy material comprising tungsten carbide in an amount of 50 to 80 weight percent of the material, titanium carbide in an amount of at least about 10 weight percent, and a binder material of cobalt and nickel. Though tungsten carbide based, the thermal conductivity of the material of the invention is between 10 and 20 Watt/m° K. In other aspects of the invention, molybdenum and chromium are included to further lower the thermal conductivity of the material. In yet another aspect of the invention, one or more nitrides or carbonitrides of titanium and/or zirconium are included in the material.
대표청구항
▼
A hard alloy material comprising tungsten carbide in an amount of 50 to 80 weight percent of the material, titanium carbide in an amount of at least about 10 weight percent, and a binder material of cobalt and nickel. Though tungsten carbide based, the thermal conductivity of the material of the inv
A hard alloy material comprising tungsten carbide in an amount of 50 to 80 weight percent of the material, titanium carbide in an amount of at least about 10 weight percent, and a binder material of cobalt and nickel. Though tungsten carbide based, the thermal conductivity of the material of the invention is between 10 and 20 Watt/m° K. In other aspects of the invention, molybdenum and chromium are included to further lower the thermal conductivity of the material. In yet another aspect of the invention, one or more nitrides or carbonitrides of titanium and/or zirconium are included in the material. ating a bubble to generate energy for creating said bubble to be grown; a plurality of liquid supply ports, each being arranged for each of said plurality of liquid flow paths to be communicated with a common liquid supply chamber; and movable members, each having fixed portion and movable portion supported with gap with said liquid supply port on said liquid flow path side, comprising the following steps of: forming a first gap formation member on an element substrate having said means for generating a bubble; forming the movable portion of said movable member on said first gap formation member and the fixing portion of said movable member on said element substrate; forming a second gap formation member for the formation of gap between the side walls of said liquid flow path and said liquid supply port on the upper surface and sides of the movable portion of said movable member; removing said first gap formation member, while leaving said second gap formation member intact in the state of being closely in contact with said movable member; forming wall material at least on said second gap formation member and circumference of said movable member; patterning said wall material to form said liquid flow path walls and said liquid supply ports altogether; and removing said second gap formation member. 2. A method for manufacturing a liquid discharge head according to claim 1, further comprising the following step of: bonding said element substrate having said means for generating a bubble, said movable member, said liquid flow path walls, and said liquid supply ports, and a ceiling plate having said common liquid supply chamber. 3. A method for manufacturing a liquid discharge head according to claim 1, wherein said step of forming said second gap formation member comprises the following steps of: forming a second gap formation layer for forming a second gap formation member to cover said movable member; forming a mask layer on said second gap formation layer to form the second gap formation member; etching said second gap formation layer with dry etching process using said mask layer; and forming said second gap formation member by etching said second gap formation layer with wet etching process subsequent to said dry etching process. 4. A method for manufacturing a liquid discharge head according to claim 3, wherein said step of removing said first gap formation member is a step of removing altogether said first gap formation member, and the mask layer for forming said second gap formation member with wet etching process. 5. A method for manufacturing a liquid discharge head according to claim 2, wherein said step of forming said mask layer is a step of forming a mask layer with one and the same material as the film used for said first gap formation member. 6. A method for manufacturing a liquid discharge head according to claim 5, wherein said step of removing said first gap formation member is a step of removing altogether said first gap formation member, and the mask layer for forming said gap formation member with wet etching process. 7. A method for manufacturing a liquid discharge head according to claim 1, wherein the material of said first gap formation member is aluminum, Al/Cu, Al/Si, or other aluminum alloy, and the material of said second gap formation member is TiW, W/Si, W, or other tungsten alloy. 8. A method for manufacturing a liquid discharge head according to claim 1, wherein said liquid flow path walls and said liquid supply ports are formed by photolithographic process using negative type resist in said step of patterning wall material. 9. A method for manufacturing a liquid discharge head according to claim 8, wherein the mask pattern used in the exposure step for said liquid flow path walls and said liquid supply ports has a wider projection area of non-photosensitive portion than the projection area of said second gap formation member on said movable member in said step of patterni
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