A detector for detecting a traffic signal from a first demodulated signal is provided. The detector comprises a first stage for receiving the first demodulated signal and generating a first estimate of the traffic signal and a second stage connected to the first stage. The second stage receives the
A detector for detecting a traffic signal from a first demodulated signal is provided. The detector comprises a first stage for receiving the first demodulated signal and generating a first estimate of the traffic signal and a second stage connected to the first stage. The second stage receives the first demodulated signal and the first estimate of the traffic signal and generates a second estimate of the traffic signal from the first demodulated signal and the first estimate of the traffic signal. A method of detecting a traffic signal from a first demodulated signal is provided. The method comprises the steps of (a) generating an estimate of the traffic signal from the first demodulated signal using a first stage and (b) generating another estimate of the traffic signal from the first demodulated signal and the estimate of the traffic signal obtained from step (a) using a second stage.
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A detector for detecting a traffic signal from a first demodulated signal is provided. The detector comprises a first stage for receiving the first demodulated signal and generating a first estimate of the traffic signal and a second stage connected to the first stage. The second stage receives the
A detector for detecting a traffic signal from a first demodulated signal is provided. The detector comprises a first stage for receiving the first demodulated signal and generating a first estimate of the traffic signal and a second stage connected to the first stage. The second stage receives the first demodulated signal and the first estimate of the traffic signal and generates a second estimate of the traffic signal from the first demodulated signal and the first estimate of the traffic signal. A method of detecting a traffic signal from a first demodulated signal is provided. The method comprises the steps of (a) generating an estimate of the traffic signal from the first demodulated signal using a first stage and (b) generating another estimate of the traffic signal from the first demodulated signal and the estimate of the traffic signal obtained from step (a) using a second stage. ed on the header for enclosing the emission component and the light sensor, said inclined top defining a window; and a convex lens mounted in the window of the inclined top of the can, wherein light beams emitted by the emission component are reflected by the convex lens to converge onto the light sensor. 2. The light source as described in claim 1, wherein the emission component is a surface-emitting laser. 3. The light source as described in claim 1, wherein the electrical signals are transmitted into an external control circuit via the electrical conductors. 4. The light source as described in claim 1, wherein a convex surface of the convex lens faces away from the light sensor. 5. A light source, comprising: a header; a laser mounted on the header; a sensor mounted on the header beside the laser; conductors extending from the header and electrically connecting with the laser and the sensor; a can mounted on the header and enclosing the laser and the sensor, the can having an inclined top, a convex lens being mounted in the inclined top, said lens reflecting part of light beams emitted from the laser onto the sensor; and a control circuit electrically connecting with the conductors. 6. The light source as describe in claim 5, wherein the light beams emitted from the laser and reflected by the lens are converged onto the sensor. 7. The light source as described in claim 6, wherein a convex surface of the lens faces away from the sensor. 8. The light source as described in claim 7, wherein the inclined top of the can defines a window, and the lens is mounted in the window. 9. A method of controlling intensity of the laser light source, comprising the steps of: providing a laser source emitting diverging light; and providing a lens intervening in a path of said diverging light, resulting in a portion of said diverging light penetrating said lens and the other portion of said diverging light reflected therefrom; wherein said reflected light is converged to a sensor positioned on the same side of said lens with said laser source. 10. The method as described in claim 9, wherein said sensor is electrically connected to a controlling circuit. 11. The method as described in claim 9, wherein said penetrating light is divergently away from said lens. 12. The method as described in claim 9, wherein the lens is obliquely positioned relative to the laser source. 13. The method as described in claim 12, wherein a center of said lens is located at a vertical central line of said laser source. 14. The method as described in claim 9, wherein said sensor and said laser source are respectively at two opposite sides of a centerline of said lens. 15. A light source comprising: a laser source emitting diverging light; a lens positioned in the way of said light to reflect a portion of the light; and a sensor positioned beside said laser source; wherein said lens is configured to have said portion of the light, which is reflected by said lens, converged toward and received by said sensor essentially without intervening with said laser source. 16. The light source as described in claim 15, wherein said lens is equipped with curvature and obliquely positioned relative to said laser source. 17. The light source as described in claim 15, wherein said laser and said sensor are located by two sides of a centerline of said lens. 18. The light source as described in claim 17, wherein said centerline of said lens is angular with regard to a vertical center line of said laser along which the light is mainly emitted. e region includes a closed area made of a semiconductor and an oxide area surrounding said closed area, wherein an aluminum composition of said closed area is the same as an aluminum composition of said first layer in said semiconductor multilayer film, wherein further comprises a further layer formed on a top surface of said first layer closest to said active region, and wherein said further layer has a thickness of approximately 1 nm through approximately 10 nm, and is made of a semiconductor of which said second layer is made. 2. The surface emitting semiconductor laser of claim 1, wherein said lower mirror and said upper mirror are both formed of said semiconductor multilayer film. 3. A The surface emitting semiconductor laser of claim 1, wherein said lower mirror is formed of said semiconductor multilayer film and said upper mirror is formed of a dielectric multilayer film. 4. A surface emitting semiconductor laser comprising an active region including an active layer, and a lower mirror and an upper mirror sandwiching said active region, wherein said upper mirror includes a first upper mirror and a second upper mirror formed on said first upper mirror, said first upper mirror has a first layer close to said active region and a second layer formed on said first layer, merely said first layer of said first upper mirror includes a closed area made of a semiconductor and an oxide area surrounding said closed area, said second layer of said first upper mirror as uppermost layer has a thickness of approximately 1 nm through approximately 10 nm, wherein said second upper mirror is formed of a semiconductor multilayer film obtained by alternately and repeatedly stacking a first layer and a second layer, wherein an aluminum composition of said closed area is the same as an aluminum composition of said first layer in said semiconductor multilayer film. 5. The surface emitting semiconductor laser of claim 4, wherein said second layer of said first upper mirror and said second layer of said second upper mirror are made of same semiconductor, respectively, and said second layer of said second upper mirror as the lowermost layer of said second upper mirror is disposed on said second layer of said first upper mirror. ining the wavelength conversion device in a temperature range from 300° C. to 500° C.; and passing a laser beam having a wavelength of 496.5 nm through the wavelength conversion device to emit a laser beam having a wavelength of 248.25 nm. 3. A method of converting a wavelength according to claim 1 wherein the single-crystal lithium tetraborate is cut so that the direction of propagation is set in the direction satisfying the relationship θm=90°±2°, where θm is an angle between the direction of propagation and the c-axis. 4. A method of converting a wavelength according to claim 2, wherein the single-crystal lithium tetraborate is cut so that the direction of propagation is set in the direction satisfying the relationship θm=90°±2°, where θm is an angle between the direction of propagation and the c-axis. ame Mode Bearer Services," CCITT Recommendation Q.922, International Telecommunication Union, Geneva, 1992. "Digital Subscriber Signalling System No 1 (DSS 1)--Signalling Specification for Frame Mode Basic Call Control," ITU-T Recommendation Q.933, International Telecommunication Union, Geneva, 1994. G.P. Chandranmenon and Gm Varghese, "Trading Packet Headers for Packet Processing," Proc. ACM SIGCOMM '95, Boston, MA, Sep. 1995, pp. 162-173. Callon et al., "A Framework for Multiprotocol Label Switching," IETF Network Working Group Internet Draft draft-ietf-mpls-framework-02.txt, Nov. 21, 1997. Rosen et al., "A Proposed Architecture for MPLS," IETF Network Working Group Internet Draft draft-retf-mplws-arch--00.txt, Aug. 1997. Woundy et al., "ARIS: Aggregate Route-Based IP Switching," Internet Draft draft-woundy-aris-ipswitching-00.txt, Nov. 1996. J. Heinanen, "VPN Support for MPLS," draft-heinanen-mpls-vpn-00.txt, Dec. 1997.
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