$\require{mediawiki-texvc}$

연합인증

연합인증 가입 기관의 연구자들은 소속기관의 인증정보(ID와 암호)를 이용해 다른 대학, 연구기관, 서비스 공급자의 다양한 온라인 자원과 연구 데이터를 이용할 수 있습니다.

이는 여행자가 자국에서 발행 받은 여권으로 세계 각국을 자유롭게 여행할 수 있는 것과 같습니다.

연합인증으로 이용이 가능한 서비스는 NTIS, DataON, Edison, Kafe, Webinar 등이 있습니다.

한번의 인증절차만으로 연합인증 가입 서비스에 추가 로그인 없이 이용이 가능합니다.

다만, 연합인증을 위해서는 최초 1회만 인증 절차가 필요합니다. (회원이 아닐 경우 회원 가입이 필요합니다.)

연합인증 절차는 다음과 같습니다.

최초이용시에는
ScienceON에 로그인 → 연합인증 서비스 접속 → 로그인 (본인 확인 또는 회원가입) → 서비스 이용

그 이후에는
ScienceON 로그인 → 연합인증 서비스 접속 → 서비스 이용

연합인증을 활용하시면 KISTI가 제공하는 다양한 서비스를 편리하게 이용하실 수 있습니다.

Copper electroplating apparatus 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C25B-015/00
  • C25B-009/00
  • C25B-013/00
출원번호 US-0706272 (2000-11-03)
발명자 / 주소
  • Mayer, Steven T.
  • Patton, Evan E.
  • Jackson, Robert L.
  • Reid, Jonathan D.
출원인 / 주소
  • Novellus Systems, Inc.
대리인 / 주소
    Beyer Weaver & Thomas, LLP
인용정보 피인용 횟수 : 114  인용 특허 : 7

초록

An electroplating apparatus prevents anode-mediated degradation of electrolyte additives by creating a mechanism for maintaining separate anolyte and catholyte and preventing mixing thereof within a plating chamber. The separation is accomplished by interposing a porous chemical transport barrier be

대표청구항

An electroplating apparatus prevents anode-mediated degradation of electrolyte additives by creating a mechanism for maintaining separate anolyte and catholyte and preventing mixing thereof within a plating chamber. The separation is accomplished by interposing a porous chemical transport barrier be

이 특허에 인용된 특허 (7)

  1. Copping William J. ; Lekki William Clayton ; Cassoni John Paul, Apparatus and method for electroplating tin with insoluble anodes.
  2. Kyle M. Hanson ; Scott Grace ; Matt Johnson ; Ken Gibbons, Apparatus for electrochemically processing a microelectronic workpiece.
  3. Okinaka Yutaka (Madison NJ) Smith Craig G. (North Plainfield NJ) Smith Lawrence E. (Plainfield NJ), Copper electroplating process.
  4. Reid Jonathan David ; Contolini Robert J. ; Dukovic John Owen, Electroplating anode including membrane partition system and method of preventing passivation of same.
  5. Hillis, Maurice R., Method and apparatus for etching copper.
  6. Brown Craig J. (Pickering CAX), Process and apparatus for control of electroplating bath composition.
  7. Martin T. Goosey GB, Processes and apparatus for recovery and removal of copper from fluids.

이 특허를 인용한 특허 (114)

  1. He, Zhian, Anisotropic high resistance ionic current source (AHRICS).
  2. Herchen, Harald, Anode isolation by diffusion differentials.
  3. Yang, Michael X.; Kovarsky, Nicolay Y., Anolyte for copper plating.
  4. Yang,Michael X.; Kovarsky,Nicolay Y., Anolyte for copper plating.
  5. Mazur, Stephen; Jackson, Jr., Charles E.; Foggin, Gary W., Apparatus adapted for membrane-mediated electropolishing.
  6. Kagajwala, Burhanuddin; Buckalew, Bryan L.; Mayer, Steven T.; Chua, Lee Peng; Berke, Aaron; Fortner, James Isaac; Rash, Robert, Apparatus and method for dynamic control of plated uniformity with the use of remote electric current.
  7. Kagajwala, Burhanuddin; Buckalew, Bryan L.; Chua, Lee Peng; Berke, Aaron; Rash, Robert; Mayer, Steven T., Apparatus and method for electrodeposition of metals with the use of an ionically resistive ionically permeable element having spatially tailored resistivity.
  8. Wang, Jian; Jin, Yinuo; Yang, Hongchao; Wang, Hui, Apparatus and method for plating and/or polishing wafer.
  9. Hanson,Kyle M., Apparatus and methods for electrochemical processing of microelectronic workpieces.
  10. Hanson,Kyle M.; Ritzdorf,Thomas L.; Wilson,Gregory J.; McHugh,Paul R., Apparatus and methods for electrochemical processing of microelectronic workpieces.
  11. Hanson,Kyle M.; Ritzdorf,Thomas L.; Wilson,Gregory J.; McHugh,Paul R., Apparatus and methods for electrochemical processing of microelectronic workpieces.
  12. Buckalew, Bryan L.; Mayer, Steven T.; Porter, David; Ponnuswamy, Thomas A., Apparatus for advanced packaging applications.
  13. Buckalew, Bryan L.; Mayer, Steven T.; Porter, David; Ponnuswamy, Thomas A., Apparatus for advanced packaging applications.
  14. Chua, Lee Peng; Ponnuswamy, Thomas A.; Rea, Mark; Mayer, Steven T., Apparatuses and methods for controlling PH in electroplating baths.
  15. Buckalew, Bryan L.; Ponnuswamy, Thomas A.; Foley, Ben; Mayer, Steven T., Apparatuses and methods for maintaining pH in nickel electroplating baths.
  16. Hanson, Kyle M.; Klocke, John L., Chambers, systems, and methods for electrochemically processing microfeature workpieces.
  17. Klocke,John; Hanson,Kyle M, Chambers, systems, and methods for electrochemically processing microfeature workpieces.
  18. Klocke,John; Hanson,Kyle M, Chambers, systems, and methods for electrochemically processing microfeature workpieces.
  19. Ganesan, Kousik; Spurlin, Tighe; Reid, Jonathan D.; Ghongadi, Shantinath; McKerrow, Andrew; Duncan, James E., Configuration and method of operation of an electrodeposition system for improved process stability and performance.
  20. Kovarsky,Nicolay; Yang,Michael; Lubomirsky,Dmitry, Contact plating apparatus.
  21. Herchen,Harald, Contact ring with embedded flexible contacts.
  22. Buckalew, Bryan; Reid, Jonathan; Sukamto, John; He, Zhian; Varadarajan, Seshasayee; Mayer, Steven T., Control of electrolyte composition in a copper electroplating apparatus.
  23. Buckalew, Bryan; Reid, Jonathan; Sukamto, John; He, Zhian; Varadarajan, Seshasayee; Mayer, Steven T., Control of electrolyte composition in a copper electroplating apparatus.
  24. He, Zhian; Zhou, Jian; Feng, Jingbin; Reid, Jonathan D.; Ghongadi, Shantinath, Control of electrolyte flow dynamics for uniform electroplating.
  25. Mayer, Steven T.; Porter, David W., Control of electrolyte hydrodynamics for efficient mass transfer during electroplating.
  26. Mayer, Steven T.; Porter, David W., Control of electrolyte hydrodynamics for efficient mass transfer during electroplating.
  27. Mayer, Steven T.; Porter, David W.; Goh, Edwin; Buckalew, Bryan L.; Rash, Robert, Control of electrolyte hydrodynamics for efficient mass transfer during electroplating.
  28. Mayer, Steven T.; Patton, Evan E.; Jackson, Robert L.; Reid, Jonathan D., Copper electroplating method and apparatus.
  29. Ponnuswamy, Thomas A.; Sukamto, John H.; Reid, Jonathan D.; Mayer, Steven T.; Zhu, Huanfeng, Copper electroplating process for uniform across wafer deposition and void free filling on ruthenium coated wafers.
  30. Ponnuswamy, Thomas A.; Sukamto, John H.; Reid, Jonathan D.; Mayer, Steven T., Copper electroplating process for uniform across wafer deposition and void free filling on semi-noble metal coated wafers.
  31. Abraham, Richard; Mayer, Steven T.; Buckalew, Bryan L.; Rash, Robert, Cross flow manifold for electroplating apparatus.
  32. Abraham, Richard; Mayer, Steven T.; Buckalew, Bryan L.; Rash, Robert, Cross flow manifold for electroplating apparatus.
  33. Pavlov,Michael; Shalyt,Eugene; Bratin,Peter, Detection of an unstable additive breakdown product in a plating bath.
  34. He, Zhian; Porter, David W.; Reid, Jonathan D.; Wilmot, Frederick D., Dynamic current distribution control apparatus and method for wafer electroplating.
  35. He, Zhian; Porter, David W.; Reid, Jonathan D.; Wilmot, Frederick D., Dynamic current distribution control apparatus and method for wafer electroplating.
  36. Graham, Gabriel Hay; Hiester, Jacob Lee; Chua, Lee Peng; Buckalew, Bryan L., Dynamic modulation of cross flow manifold during electroplating.
  37. Zheng, Bo; He, Renren; Dixit, Girish, ECP gap fill by modulating the voltate on the seed layer to increase copper concentration inside feature.
  38. Graham, Gabriel Hay; Buckalew, Bryan L.; Mayer, Steven T.; Rash, Robert; Fortner, James Isaac; Chua, Lee Peng, Edge flow element for electroplating apparatus.
  39. Herchen,Harald; Lubomirsky,Dmitry; Zheng,Bo; Pang,Lily L., Electric field reducing thrust plate.
  40. Guarnaccia, David; Keigler, Arthur; Papapanayiotou, Demetrius; Chiu, Johannes, Electro chemical deposition and replenishment apparatus.
  41. Papapanayiotou, Demetrius; Keigler, Arthur; Guarnaccia, David; Hander, Jonathan; Chiu, Johannes, Electro chemical deposition and replenishment apparatus.
  42. Keigler, Arthur; Guarnaccia, David; Papapanayiotou, Demetrius; Hander, Jonathan, Electrochemical deposition apparatus with remote catholyte fluid management.
  43. Yang,Michael X.; Lubomirsky,Dmitry; Dordi,Yezdi; Singh,Saravjeet; Tulshibagwale,Sheshraj; Kovarsky,Nicolay, Electrochemical processing cell.
  44. Uzoh,Cyprian E.; Basol,Bulent M., Electrode assembly for electrochemical processing of workpiece.
  45. Basol, Bulent M.; Uzoh, Cyprian E.; Lindquist, Paul; Talieh, Homayoun, Electroetching methods and systems using chemical and mechanical influence.
  46. Varadarajan,Seshasayee; Zhou,Jian, Electroless copper fill process.
  47. Rash, Robert; Abraham, Richard; Porter, David W.; Mayer, Steven T., Electrolyte loop with pressure regulation for separated anode chamber of electroplating system.
  48. Rash, Robert; Abraham, Richard; Porter, David W.; Mayer, Steven T., Electrolyte loop with pressure regulation for separated anode chamber of electroplating system.
  49. Aiba, Akihiro; Okabe, Takeo, Electrolytic copper plating method, phosphorous copper anode for electrolytic copper plating, and semiconductor wafer having low particle adhesion plated with said method and anode.
  50. Aiba, Akihiro; Okabe, Takeo; Sekiguchi, Junnosuke, Electrolytic copper plating method, pure copper anode for electrolytic copper plating, and semiconductor wafer having low particle adhesion plated with said method and anode.
  51. Baskaran, Rajesh; Batz, Jr., Robert W.; Kim, Bioh; Ritzdorf, Thomas L.; Klocke, John Lee; Hanson, Kyle M., Electrolytic copper process using anion permeable barrier.
  52. Baskaran, Rajesh; Batz, Jr., Robert W; Kim, Bioh; Ritzdorf, Tom L; Klocke, John L; Hanson, Kyle M, Electrolytic copper process using anion permeable barrier.
  53. Baskaran, Rajesh; Batz, Jr., Robert W.; Kim, Bioh; Ritzdorf, Tom L.; Klocke, John Lee; Hanson, Kyle M., Electrolytic process using anion permeable barrier.
  54. Baskaran, Rajesh; Batz, Jr., Robert W.; Kim, Bioh; Ritzdorf, Tom L.; Klocke, John L.; Hanson, Kyle M., Electrolytic process using cation permeable barrier.
  55. Baskaran, Rajesh; Batz, Jr., Robert W.; Kim, Bioh; Ritzdorf, Tom L.; Klocke, John L.; Hanson, Kyle M., Electrolytic process using cation permeable barrier.
  56. Mayer, Steven T.; Porter, David W., Electroplating apparatus and process for wafer level packaging.
  57. Mayer, Steven T.; Porter, David W., Electroplating apparatus and process for wafer level packaging.
  58. Mayer, Steven T.; Porter, David W.; Buckalew, Bryan L.; Rash, Robert, Electroplating apparatus for tailored uniformity profile.
  59. Mayer, Steven T.; Porter, David W.; Buckalew, Bryan L.; Rash, Robert, Electroplating apparatus for tailored uniformity profile.
  60. Harris, Randy A.; Puch, Bryan J., Electroplating apparatus with contact ring deplating.
  61. Feng, Jingbin; He, Zhian; Rash, Robert; Mayer, Steven T., Electroplating apparatus with vented electrolyte manifold.
  62. Woodruff, Daniel J., Electroplating processor with thin membrane support.
  63. Mayer, Steven T.; Buckalew, Bryan L.; Fu, Haiying; Ponnuswamy, Thomas; Diaz Camilo, Hilton; Rash, Robert; Porter, David W., Enhancement of electrolyte hydrodynamics for efficient mass transfer during electroplating.
  64. Mayer, Steven T.; Buckalew, Bryan L.; Fu, Haiying; Ponnuswamy, Thomas; Diaz Camilo, Hilton; Rash, Robert; Porter, David W., Enhancement of electrolyte hydrodynamics for efficient mass transfer during electroplating.
  65. Mayer, Steven T.; Reid, Jonathan D., High resistance ionic current source.
  66. Kim, Doyeon; Ghongadi, Shantinath; Takada, Yuichi; Huang, Ludan; Majid, Tariq, Membrane design for reducing defects in electroplating systems.
  67. Mazur,Stephen; Jackson, Jr.,Charles E., Membrane-mediated electropolishing.
  68. He, Zhian, Method and apparatus for dynamic current distribution control during electroplating.
  69. Mayer, Steven; Feng, Jingbin; He, Zhian; Reid, Jonathan; Varadarajan, Seshasayee, Method and apparatus for electroplating.
  70. Mayer, Steven; Feng, Jingbin; He, Zhian; Reid, Jonathan; Varadarajan, Seshasayee, Method and apparatus for electroplating.
  71. Mayer, Steven; Feng, Jingbin; He, Zhian; Reid, Jonathan; Varadarajan, Seshasayee, Method and apparatus for electroplating.
  72. Reid, Jonathan; Buckalew, Bryan; He, Zhian; Park, Seyang; Varadarajan, Seshasayee; Pennington, Bryan; Ponnuswamy, Thomas; Breling, Patrick; Ibarreta, Glenn; Mayer, Steven, Method and apparatus for electroplating.
  73. Spurlin, Tighe A.; Merrill, Charles L.; Huang, Ludan; Thorum, Matthew; Brogan, Lee; Duncan, James E.; Wilmot, Frederick D.; Stowell, Robert Marshall; Mayer, Steven T.; Fu, Haiying; Porter, David W.; Ghongadi, Shantinath; Reid, Jonathan D.; Lee, Hyosang S.; Willey, Mark J., Method and apparatus for electroplating semiconductor wafer when controlling cations in electrolyte.
  74. Reid, Jonathan D.; Zhu, Huanfeng, Method and apparatus for filling interconnect structures.
  75. Reid, Jonathan D.; Zhu, Huanfeng, Method and apparatus for filling interconnect structures.
  76. Gandikota, Srinivas; McGuirk, Chris R.; Padhi, Deenesh; Ramanathan, Sivakami; Malik, Muhammad Atif; Dixit, Girish A., Method and apparatus for reducing organic depletion during non-processing time periods.
  77. Klocke, John; Hanson, Kyle M.; Baskaran, Rajesh, Method and system for idle state operation.
  78. Koenig, Axel; Möbius, Andreas; Stark, Franz-Josef, Method for supplying a plating composition with deposition metal ion during a plating operation.
  79. Mayer, Steven T.; Reid, Jonathan D., Method of electroplating using a high resistance ionic current source.
  80. Mayer, Steven T; Reid, Jonathan D., Method of electroplating using a high resistance ionic current source.
  81. Reid, Jonathan; Varadarajan, Sesha; Emekli, Ugur, Methods and apparatus for depositing copper on tungsten.
  82. Reid, Jonathan; Varadarajan, Sesha; Emekli, Ugur, Methods and apparatus for depositing copper on tungsten.
  83. Kagajwala, Burhanuddin; Buckalew, Bryan L.; Berke, Aaron; Fortner, James Isaac; Rash, Robert, Methods and apparatuses for dynamically tunable wafer-edge electroplating.
  84. Buckalew, Bryan L, Methods and apparatuses for electroplating nickel using sulfur-free nickel anodes.
  85. Mayer, Steven T.; Porter, David W., Modulated metal removal using localized wet etching.
  86. Yang,Michael X.; Xi,Ming; Ellwanger,Russell C.; Britcher,Eric B.; Donoso,Bernardo; Pang,Lily L.; Sherman,Svetlana; Ho,Henry; Nguyen,Anh N.; Lerner,Alexander N.; D'Ambra,Allen L.; Shanmugasundram,Arul, Multi-chemistry plating system.
  87. Wang, Jian; Jin, Yinuo; Wang, Hui, Nozzle for stress-free polishing metal layers on semiconductor wafers.
  88. Krusor, Brent S.; Chua, Christopher L., Out of plane structures and methods for making out of plane structures.
  89. Mayer, Steven T.; Svirchevski, Julia; Drewery, John Stephen, Pad-assisted electropolishing.
  90. Minami, Yoshio, Plating apparatus.
  91. Uchiumi, Yuji, Plating apparatus.
  92. Saito, Nobutoshi; Fujikata, Jumpei; Yamamoto, Tadaaki; Kamimura, Kenji, Plating apparatus and plating method.
  93. Saito, Nobutoshi; Fujikata, Jumpei; Yamamoto, Tadaaki; Kamimura, Kenji, Plating apparatus and plating method.
  94. Saito, Nobutoshi; Fujikata, Jumpei; Yamamoto, Tadaaki; Kamimura, Kenji, Plating apparatus and plating method.
  95. Ma, Yue; Wang, Xi; Huang, Yunwen; Pang, Zhenxu; Nuch, Voha; Wang, David, Plating apparatus for metallization on semiconductor workpiece.
  96. Knop, Jacek M.; Carter, John G.; Cleary, Donald E., Plating method.
  97. Mayer, Steven T.; Ghongadi, Shantinath; Ganesan, Kousik; He, Zhian; Feng, Jingbin, Plating method and apparatus with multiple internally irrigated chambers.
  98. Mayer, Steven; Ghongadi, Shantinath; Ganesan, Kousik; He, Zhian; Feng, Jingbin, Plating method and apparatus with multiple internally irrigated chambers.
  99. Chua, Lee Peng; Mayer, Steven T.; Porter, David W.; Ponnuswamy, Thomas A., Protecting anodes from passivation in alloy plating systems.
  100. Chua, Lee Peng; Mayer, Steven T.; Porter, David W.; Ponnuswamy, Thomas A., Protecting anodes from passivation in alloy plating systems.
  101. Mayer, Steven T.; Drewery, John S., Rotationally asymmetric variable electrode correction.
  102. Mayer, Steven T.; Drewery, John S.; Hill, Richard S.; Archer, Timothy M.; Kepten, Avishai, Selective electrochemical accelerator removal.
  103. Mayer, Steven T.; Stowell, Marshall R.; Drewery, John S.; Hill, Richard S.; Archer, Timothy M.; Kepten, Avishai, Selective electrochemical accelerator removal.
  104. Patton, Evan E.; Cacouris, Theodore; Broadbent, Eliot; Mayer, Steven T., Sequential station tool for wet processing of semiconductor wafers.
  105. Patton, Evan E.; Cacouris, Theodore; Broadbent, Eliot; Mayer, Steven T., Sequential station tool for wet processing of semiconductor wafers.
  106. Patton, Evan E.; Cacouris, Theodore; Broadbent, Eliot; Mayer, Steven T., Sequential station tool for wet processing of semiconductor wafers.
  107. D'Ambra,Allen L.; Shanmugasundram,Arulkumar; Yang,Michael X.; Rabinovich,Yevgeniy (Eugene); Lubomirsky,Dmitry, Slim cell platform plumbing.
  108. Wang,You; Chang,Anzhong; Dukovic,John O., Substrate support element for an electrochemical plating cell.
  109. Fery,Mark; Subramanian,Jai, Thermal interconnect systems methods of production and uses thereof.
  110. Bokisa, Sr.,George S.; Eckles,William E.; Frischauf,Robert E., Tin alloy electroplating system.
  111. Mayer, Steven T.; Rea, Mark L.; Hill, Richard S.; Kepten, Avishai; Stowell, R. Marshall; Webb, Eric G., Topography reduction and control by selective accelerator removal.
  112. Mayer, Steven T.; Rea, Mark L.; Hill, Richard S.; Kepten, Avishai; Stowell, R. Marshall; Webb, Eric G., Topography reduction and control by selective accelerator removal.
  113. Reid, Jonathan; Park, Seyang; Varadarajan, Seshasayee; Doubina, Natalia, Two step process for uniform across wafer deposition and void free filling on ruthenium coated wafers.
  114. Mayer, Steven T., Uniform electroplating of thin metal seeded wafers using rotationally asymmetric variable anode correction.
섹션별 컨텐츠 바로가기

AI-Helper ※ AI-Helper는 오픈소스 모델을 사용합니다.

AI-Helper 아이콘
AI-Helper
안녕하세요, AI-Helper입니다. 좌측 "선택된 텍스트"에서 텍스트를 선택하여 요약, 번역, 용어설명을 실행하세요.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.

선택된 텍스트

맨위로