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A hard carbon thin film formed on a substrate has a graded structure in which a ratio of sp2to sp3carbon-carbon bonding in the thin film decreases in its thickness direction from a thin film/substrate interface toward a surface of the thin film. A method of forming the thin film involves varying the

A hard carbon thin film formed on a substrate has a graded structure in which a ratio of sp2to sp3carbon-carbon bonding in the thin film decreases in its thickness direction from a thin film/substrate interface toward a surface of the thin film. A method of forming the thin film involves varying the film-forming ion species over time to produce the composition gradient or structural gradient in the thickness direction of the thin film.

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1. A method of forming a carbon thin film through decomposition of a raw material gas, comprising providing a raw material gas, carrying out a first film-forming process through thermal decomposition of the raw material gas, wherein the first film-forming process comprises exposing the raw mater

1. A method of forming a carbon thin film through decomposition of a raw material gas, comprising providing a raw material gas, carrying out a first film-forming process through thermal decomposition of the raw material gas, wherein the first film-forming process comprises exposing the raw material gas to a hot filament disposed above a substrate, which causes the thermal decomposition of the raw material gas which leads to the deposition of carbon to contribute to the formation of a carbon thin film on the substrate, and thereafter carrying out a second film-forming process through plasma assisted decomposition of the raw material gas, so as to further deposit carbon and further contribute to the formation of the carbon thin film while controlling film properties of the carbon thin film. 2. The method of claim 1, further comprising providing a hydrogen gas in at least one of the first and second film-forming processes to control the film properties of the carbon thin film. 3. The method of claim 1, wherein the second film-forming process comprises generating and using an ECR plasma to effect the plasma assisted decomposition of the raw material gas. 4. A method of forming a carbon thin film through decomposition of a raw material gas, the method including the following steps: a) providing a raw material gas; b) forming a first thin film by carrying out a first film-forming process including thermal decomposition of the raw material gas, wherein the first film-forming process comprises exposing the raw material gas to a hot filament disposed above a substrate, which causes the thermal decomposition of the raw material gas, which leads to the formation of the first thin film on the substrate; and c) after the step b), forming a second thin film on the first thin film by carrying out a second film-forming process including plasma decomposition of the raw material gas; whereby the carbon thin film, including the first thin film and the second thin film, is provided. 5. The method of claim 4, wherein the step b) includes solely the first film-forming process which includes solely the thermal decomposition of the raw material gas to form the first thin film. 6. The method of claim 4, wherein the step c) includes solely the second film-forming process which includes solely the plasma decomposition of the raw material gas to form the second thin film. 7. The method of claim 4, wherein the first film-forming process of the step b) further includes a plasma decomposition of the raw material gas concurrently with the thermal decomposition of the raw material gas. 8. The method of claim 4, wherein the second film-forming process of the step c) further includes a thermal decomposition of the raw material gas concurrently with the plasma decomposition of the raw material gas. 9. The method of claim 4, wherein the substrate is heated to a first temperature during the step b), and the substrate cools to a second temperature lower than the first temperature during the step c). 10. The method of claim 9, wherein the second temperature is in a range from 250° C. to 300° C. 11. The method of claim 9, wherein neither the first temperature nor the second temperature exceeds 400° C.