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An apparatus and method for depositing a thin film on a semiconductor substrate. The apparatus includes a chamber or housing suited for holding a plurality of wafer platforms. The wafer platforms are arranged stacked in the chamber equidistant and electrically isolated from each other wafer platform

An apparatus and method for depositing a thin film on a semiconductor substrate. The apparatus includes a chamber or housing suited for holding a plurality of wafer platforms. The wafer platforms are arranged stacked in the chamber equidistant and electrically isolated from each other wafer platform. At least two of the plurality of wafer platforms are electrically coupled to a power source to form a first electrode and a second electrode. The remainder of the plurality of wafer platforms are disposed therebetween. In this manner, the first electrode and the second electrode form a single series capacitor. At least one reactant gas is provided in the chamber and reacted with sufficiently supplied energy to form a plasma. Radicals or ions from the plasma react on the surface of the wafers to cause a thin film layer to be distributed on the equally dispersed wafers positioned on a surface of the wafer platforms.

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An apparatus and method for depositing a thin film on a semiconductor substrate. The apparatus includes a chamber or housing suited for holding a plurality of wafer platforms. The wafer platforms are arranged stacked in the chamber equidistant and electrically isolated from each other wafer platform

An apparatus and method for depositing a thin film on a semiconductor substrate. The apparatus includes a chamber or housing suited for holding a plurality of wafer platforms. The wafer platforms are arranged stacked in the chamber equidistant and electrically isolated from each other wafer platform. At least two of the plurality of wafer platforms are electrically coupled to a power source to form a first electrode and a second electrode. The remainder of the plurality of wafer platforms are disposed therebetween. In this manner, the first electrode and the second electrode form a single series capacitor. At least one reactant gas is provided in the chamber and reacted with sufficiently supplied energy to form a plasma. Radicals or ions from the plasma react on the surface of the wafers to cause a thin film layer to be distributed on the equally dispersed wafers positioned on a surface of the wafer platforms.