초록 ▼

A smart light bulb is provided which may include a housing, an illumination source, disposed in the housing, and a processor, disposed in the housing, for controlling the illumination source. The housing may be configured to fit a conventional light fixture. The illumination source may be an LED sys

A smart light bulb is provided which may include a housing, an illumination source, disposed in the housing, and a processor, disposed in the housing, for controlling the illumination source. The housing may be configured to fit a conventional light fixture. The illumination source may be an LED system or other illumination source. The processor may control the intensity or the color of the illumination source. The housing may also house a transmitter and/or receiver. The smart light bulb may respond to a signal from another device or send a signal to another device. The other device may be another smart light bulb or another device. The smart light bulb may be associated with a wide variety of illumination applications and environments.

대표청구항 ▼

A smart light bulb is provided which may include a housing, an illumination source, disposed in the housing, and a processor, disposed in the housing, for controlling the illumination source. The housing may be configured to fit a conventional light fixture. The illumination source may be an LED sys

A smart light bulb is provided which may include a housing, an illumination source, disposed in the housing, and a processor, disposed in the housing, for controlling the illumination source. The housing may be configured to fit a conventional light fixture. The illumination source may be an LED system or other illumination source. The processor may control the intensity or the color of the illumination source. The housing may also house a transmitter and/or receiver. The smart light bulb may respond to a signal from another device or send a signal to another device. The other device may be another smart light bulb or another device. The smart light bulb may be associated with a wide variety of illumination applications and environments. ions on Electron Devices, 37, 583-590, (Mar. 1990). Fuse, T., et al., "A 0.5V 200MHz 1-Stage 32b ALU Using a Body Bias Controlled SOI Pass-Gate Logic", 1997 IEEE International Solid-State Circuits Conference, Digest of Technical Papers, 286-287, (1997). Gong, S., et al., "Techniques for Reducing Switching Noise in High Speed Digital Systems", Proceedings of the 8th Annual IEEE International ASIC Conference and Exhibit, 21-24, (1995). Hao, M.Y., et al., "Electrical Characteristics of Oxynitrides Grown on Textured Single-Crystal Silicon", Appl. Phys. Lett., 60, 445-447, (Jan. 1992). Harada, M., et al., "Suppression of Threshold Voltage Variation in MTCMOS/SIMOX Circuit Operating Below 0.5 V", 1996 Symposium on VLSI Technology, Digest of Technical Papers, Honolulu, HI, 96-97, (Jun. 11-13, 1996). Hisamoto, D., et al., "A New Stacked Cell Structure for Giga-Bit DRAMs using Vertical Ultra-Thin SOI (DELTA) MOSFETs", 1991 IEEE International Electron Devices Meeting, Technical Digest, Washington, D.C., 959-961, (Dec. 8-11, 1991). Hodges, D.A., et al., "MOS Decoders", In: Analysis and Design of Digital Integrated Circuits, 2nd Edition, McGraw-Hill Book Co., New York, 354-357, (1988). Holman, W.T., et al., "A Compact Low Noise Operational Amplifier for a 1.2 Micrometer Digital CMOS Technology", IEEE Journal of Solid-State Circuits, 30, 710-714, (Jun. 1995). Hu, G., et al., "Will Flash Memory Replace Hard Disk Drives?", 1994 IEEE International Electron Devices Meeting, Panel Discussion, Session 24, Outline, 1 p., (Dec. 13, 1994). Huang, W.L., et al., "TFSOI Complementary BiCMOS Technology for Low Power Applications", IEEE Transactions on Electron Devices, 42, 506-512, (Mar. 1995). Jun, Y.K., et al., "The Fabrication and Electrical Properties of Modulated Stacked Capacitor for Advanced DRAM Applications", IEEE Electron Device Letters, 13, 430-432, (Aug. 1992). Jung, T.S., et al., "A 117-mm23.3-V Only 128-Mb Multilevel NAND Flash Memory for Mass Storage Applications", IEEE Journal of Solid-State C