One cell programmable switch using non-volatile cell
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H03K-019/177
G11C-016/04
출원번호
US-0872716
(2001-06-01)
발명자
/ 주소
Sun, Albert
Sheu, Eric
Lo, Ying-Che
출원인 / 주소
Macronix International Co., Ltd.
대리인 / 주소
Haynes, Mark A.Haynes Beffel & Wolfeld LLP
인용정보
피인용 횟수 :
76인용 특허 :
41
초록▼
A one transistor, non-volatile programmable switch is less complex and requires less area than prior art devices. The programmable switch is used in an integrated circuit and comprises a first node and a second node coupled with corresponding circuit elements in the integrated circuit. A single, non
A one transistor, non-volatile programmable switch is less complex and requires less area than prior art devices. The programmable switch is used in an integrated circuit and comprises a first node and a second node coupled with corresponding circuit elements in the integrated circuit. A single, non-volatile programmable transistor having a drain coupled to one of the first node and second node, a source coupled to the other of the first node and second node, gate coupled to an energizing conductor, the data storage structure constitute the programmable switch. The non-volatile programmable transistor consists of a mask programmable ROM cell, or a charge programmable device, in which the data storage structure comprises a floating gate or a nitride layer, or other charge trapping layer, between oxides or other insulators. A charge pump is coupled to the energizing conductor to produce a boosted voltage during logical operation of integrated circuit, so that voltage dissipation across the programmable switch is minimized or eliminated. In an embodiment, in which a charge programmable device is used, programmable circuitry is coupled to the first and second nodes, and to the energizing conductor to apply voltages sufficient to inject and remove charge from the charge storage structure for programming the charge programmable device. For integrated circuits in which voltages used for programming and erasing the non-volatile charge programmable device are high relative to the design rule for the circuit elements to be interconnected, a structure to withstand the high voltages is included.
대표청구항▼
A one transistor, non-volatile programmable switch is less complex and requires less area than prior art devices. The programmable switch is used in an integrated circuit and comprises a first node and a second node coupled with corresponding circuit elements in the integrated circuit. A single, non
A one transistor, non-volatile programmable switch is less complex and requires less area than prior art devices. The programmable switch is used in an integrated circuit and comprises a first node and a second node coupled with corresponding circuit elements in the integrated circuit. A single, non-volatile programmable transistor having a drain coupled to one of the first node and second node, a source coupled to the other of the first node and second node, gate coupled to an energizing conductor, the data storage structure constitute the programmable switch. The non-volatile programmable transistor consists of a mask programmable ROM cell, or a charge programmable device, in which the data storage structure comprises a floating gate or a nitride layer, or other charge trapping layer, between oxides or other insulators. A charge pump is coupled to the energizing conductor to produce a boosted voltage during logical operation of integrated circuit, so that voltage dissipation across the programmable switch is minimized or eliminated. In an embodiment, in which a charge programmable device is used, programmable circuitry is coupled to the first and second nodes, and to the energizing conductor to apply voltages sufficient to inject and remove charge from the charge storage structure for programming the charge programmable device. For integrated circuits in which voltages used for programming and erasing the non-volatile charge programmable device are high relative to the design rule for the circuit elements to be interconnected, a structure to withstand the high voltages is included. ber of the determined power approximate expression becomes -0.5 or about -0.5; and estimating the assumed open circuit voltage to be the open circuit voltage when the power number becomes -0.5 or about -0.5. 2. The vehicle battery's open circuit voltage estimating method as set forth in claim 1, wherein the power approximate expression is given by α·tDwith time t, an unknown coefficient α, and an unknown negative power number D, when the disconnected voltage is measured after completion of the charge. 3. The vehicle battery's open circuit voltage estimating method as set forth in claim 1, wherein the difference value for determining the power approximate expression is an absolute value obtained by subtracting the assumed open circuit voltage from the measured disconnected voltage when the disconnected voltage is measured after completion of the discharge, and the power approximate expression is given by α·tDwith time t, an unknown coefficient α, and an unknown negative power number D. 4. The vehicle battery's open circuit voltage estimating method as set forth in claim 2 or claim 3, wherein the power number D of the power approximate expression is determined by a regression computation processing by using a plurality of measured disconnected voltages and corresponding times from the completion of the charge or the discharge. 5. A vehicle battery's open circuit voltage estimating system for estimating an open circuit voltage of a vehicle-borne battery supplying electric power to vehicle-borne loads, comprising: a disconnected voltage measuring means for measuring a disconnected voltage of the battery multiple times in a definite period of time after a predetermined period of time after completion of charge or discharge of the battery; an approximate expression determining means for determining a power approximate expression having a negative power number by using a difference value of the measured disconnected voltage and an assumed open circuit voltage; and an arithmetic operation controlling means for making the approximate expression determining means update the assumed open circuit voltage and determine the power approximate expression repeatedly until the power number of the determined power approximate expression becomes -0.5 or about -0.5, wherein the assumed open circuit voltage is estimated to be the open circuit voltage when the power number becomes -0.5 or about -0.5. 6. The vehicle battery's open circuit voltage estimating system as set forth in claim 5, wherein the power approximate expression is given by α·tDwith time t, an unknown coefficient α, and an unknown negative power number D, when the disconnected voltage is measured after completion of the charge. 7. The vehicle battery's open circuit voltage estimating system as set forth in claim 5, wherein the difference value for determining the power approximate expression is an absolute value obtained by subtracting the assumed open circuit voltage from the measured disconnected voltage when the disconnected voltage is measured after completion of the discharge, and the power approximate expression is given by α·tDwith time t, an unknown coefficient α, and an unknown negative power number D. 8. The vehicle battery's open circuit voltage estimating system as set forth in claim 6 or claim 7, wherein the power number D of the power approximate expression is determined by a regression computation processing by using a plurality of measured disconnected voltages and corresponding times from the completion of the charge or the discharge. ge Electromagnetic MWD System" (2 pages).
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