초록

A process for producing a semiconductor article is provided which comprises the steps of bonding a film onto a substrate having a porous semiconductor layer, and separating the film from the substrate at the porous semiconductor layer by applying a force to the film in a peeling direction.

대표청구항 ▼

1. A method for forming a semiconductor thin film which comprises steps of: implanting at least one kind of ion of a material selected from a group consisting of hydrogen, rare gases and nitrogen into a semiconductor substrate to define an ion-implanted layer and a semiconductor thin film on the

1. A method for forming a semiconductor thin film which comprises steps of: implanting at least one kind of ion of a material selected from a group consisting of hydrogen, rare gases and nitrogen into a semiconductor substrate to define an ion-implanted layer and a semiconductor thin film on the ion-implanted layer, bonding a film on a surface side of the semiconductor substrate, and separating the semiconductor thin film on the ion-implanted layer from the remainder of the semiconductor substrate at the ion-implanted layer by applying an external force, and warping the semiconductor substrate or the film bonded on the semiconductor substrate such that a crack forms and extends from a flank side of the semiconductor substrate. 2. The method according to claim 1, which comprises a step of forming said semiconductor thin film on the surface of a semiconductor body before said ion-implanted layer is formed. 3. The method according to claim 1, which comprises a step of forming an oxide layer on the surface of said semiconductor substrate before said ion-implanted layer is formed. 4. The method for forming a semiconductor thin film according to claim 1, wherein said semiconductor substrate is a non-porous semi-conductor substrate. 5. A method for forming a semiconductor thin film which comprises steps of: implanting at least one kind of ion of a material selected from a group consisting of hydrogen, rare gases and nitrogen into a semiconductor substrate to define an ion-implanted layer and a semiconductor thin film on the ion-implanted layer, separating the semiconductor thin film on the ion-implanted layer from the remainder of the semiconductor substrate at the ion-implanted layer by applying an external force and warping the semiconductor substrate such that crack forms and extends from a flank side of the semiconductor substrate. 6. The method according to claim 5, which comprises a step of forming said semiconductor thin film on the surface of a semiconductor body before said ion-implanted layer is formed. 7. The method according to claim 5, which comprises a step of forming an oxide layer on the surface of said semiconductor substrate before said ion-implanted layer is formed. 8. The method for forming a semiconductor thin film according to claim 5, wherein said semiconductor substrate is a non-porous semiconductor substrate.