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Semiconductor device and manufacturing method thereof 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-029/76
  • H01L-029/94
  • H01L-031/062
  • H01L-031/113
  • H01L-031/119
출원번호 US-0559185 (2000-04-27)
우선권정보 JP-0124924 (1999-04-30); JP-0206961 (1999-07-22)
발명자 / 주소
  • Yamazaki, Shunpei
출원인 / 주소
  • Semiconductor Energy Laboratory Co., Ltd.
대리인 / 주소
    Robinson, Eric J.Robinson Intellectual Property Law Office, P.C.
인용정보 피인용 횟수 : 127  인용 특허 : 21

초록

A semiconductor device having high operating performance and reliability, and a manufacturing method thereof are provided. An LDD region 207 provided in an n-channel TFT 302 forming a driving circuit enhances the tolerance for hot carrier injection. LDD regions 217-220 provided in an n-channel TFT (

대표청구항

A semiconductor device having high operating performance and reliability, and a manufacturing method thereof are provided. An LDD region 207 provided in an n-channel TFT 302 forming a driving circuit enhances the tolerance for hot carrier injection. LDD regions 217-220 provided in an n-channel TFT (

이 특허에 인용된 특허 (21)

  1. Matsumoto Hiroshi (Hachioji JPX), Active matrix liquid crystal display having a peripheral driving circuit element.
  2. Ohtani Hisashi,JPX ; Ogata Yasushi,JPX ; Hirakata Yoshiharu,JPX, Active matrix liquid crystal with capacitor between light blocking film and pixel connecting electrode.
  3. Yamazaki Shunpei,JPX ; Ohtani Hisashi,JPX ; Fukunaga Takeshi,JPX, CMOS semiconductor device having boron doped channel.
  4. Yamazaki Shunpei,JPX ; Takemura Yasuhiko,JPX, Electro-optical device having silicon nitride interlayer insulating film.
  5. Miyazaki Minoru,JPX ; Murakami Akane,JPX ; Cui Baochun,JPX ; Yamamoto Mutsuo,JPX, Electronic circuit.
  6. Miyazaki Minoru,JPX ; Murakami Akane,JPX ; Cui Baochun,JPX ; Yamamoto Mutsuo,JPX, Electronic circuit.
  7. Miyazaki Minoru,JPX ; Murakami Akane,JPX ; Cui Baochun,JPX ; Yamamoto Mutsuo,JPX, Electronic circuit.
  8. Konuma Toshimitsu (Kanagawa JPX) Nishi Takeshi (Kanagawa JPX) Shimizu Michio (Chiba JPX) Mori Harumi (Kanagawa JPX) Moriya Kouji (Kanagwa JPX) Murakami Satoshi (Kanagawa JPX), Liquid-crystal electro-optical apparatus and method of manufacturing the same.
  9. Zhang Hongyong (Kanagawa JPX) Ohnuma Hideto (Kanagawa JPX) Yamaguchi Naoaki (Kanagawa JPX) Takemura Yasuhiko (Kanagawa JPX), Method for fabricating thin film transistor using anodic oxidation.
  10. Ohtani Hisashi (Kanagawa JPX) Miyanaga Akiharu (Kanagawa JPX) Fukunaga Takeshi (Kanagawa JPX) Zhang Hongyong (Kanagawa JPX), Method for manufacturing a semiconductor device.
  11. Ohtani Hisashi,JPX ; Miyanaga Akiharu,JPX ; Fukunaga Takeshi,JPX ; Zhang Hongyong,JPX, Method for manufacturing a semiconductor device.
  12. Takano Tamae,JPX ; Ohnuma Hideto,JPX ; Ohtani Hisashi,JPX ; Nakajima Setsuo,JPX ; Yamazaki Shunpei,JPX, Method of manufacturing a semiconductor device.
  13. Yamazaki Shunpei,JPX ; Ohtani Hisashi,JPX, Method of manufacturing semiconductor device.
  14. Yamazaki Shunpei,JPX, Method of manufacturing semiconductor devices using a crystallization promoting material.
  15. Zhang Hongyong,JPX ; Sakakura Masayuki,JPX ; Ishii Futoshi,JPX, Producing devices having both active matrix display circuits and peripheral circuits on a same substrate.
  16. Yamazaki Shunpei,JPX ; Koyama Jun,JPX ; Ohtani Hisashi,JPX, Semiconductor device.
  17. Ohtani Hisashi,JPX ; Nakazawa Misako,JPX, Semiconductor device and a method of manufacturing the same.
  18. Zhang Hongyong,JPX ; Ohnuma Hideto,JPX ; Yamaguchi Naoaki,JPX ; Takemura Yasuhiko,JPX, Semiconductor device and method for fabricating the same.
  19. Zhang Hongyong,JPX ; Ohnuma Hideto,JPX ; Yamaguchi Naoaki,JPX ; Takemura Yasuhiko,JPX, Semiconductor device and method for fabricating the same.
  20. Miyazaki Minoru (Kanagawa JPX) Murakami Akane (Kanagawa JPX) Cui Baochun (Kanagawa JPX) Yamamoto Mutsuo (Kanagawa JPX), Semiconductor device having a lead including aluminum.
  21. Ohtani Hisashi,JPX ; Yamazaki Shunpei,JPX ; Itoh Masataka,JPX, Semiconductor device having multilayered gate electrode and impurity regions overlapping therewith.

이 특허를 인용한 특허 (127)

  1. Yamazaki, Shunpei; Koyama, Jun; Yamamoto, Kunitaka; Konuma, Toshimitsu, Display device.
  2. Yamazaki, Shunpei; Koyoma, Jun; Yamamoto, Kunitaka; Konuma, Toshimitsu, Display device.
  3. Yamazaki, Shunpei; Mizukami, Mayumi; Konuma, Toshimitsu, Display device.
  4. Sakakura, Masayuki; Miyake, Hiroyuki, Display device, method for manufacturing the same, and electronic device having the same.
  5. Yamazaki,Shunpei; Murakami,Satoshi; Koyama,Jun; Tanaka,Yukio; Kitakado,Hidehito; Ohnumo,Hideto, Display including casing and display unit.
  6. Yamazaki, Shunpei; Suzawa, Hideomi, Dry etching apparatus, etching method, and method of forming a wiring.
  7. Yamazaki, Shunpei; Mizukami, Mayumi; Konuma, Toshimitsu, EL display device and method for manufacturing the same.
  8. Yamazaki, Shunpei; Koyama, Jun; Yamamoto, Kunitaka; Konuma, Toshimitsu, Electro-optical device and electronic device.
  9. Yamazaki, Shunpei; Koyama, Jun; Yamamoto, Kunitaka; Konuma, Toshimitsu, Electro-optical device and electronic device.
  10. Yamazaki, Shunpei; Koyama, Jun; Yamamoto, Kunitaka; Konuma, Toshimitsu, Electro-optical device and electronic device.
  11. Yamazaki, Shunpei; Koyama, Jun; Yamamoto, Kunitaka; Konuma, Toshimitsu, Electro-optical device and electronic device.
  12. Yamazaki,Shunpei, Electro-optical device and manufacturing method thereof.
  13. Ono, Koji; Suzawa, Hideomi; Arao, Tatsuya, Electroluminescence display device.
  14. Ono, Koji; Suzawa, Hideomi; Arao, Tatsuya, Electroluminescence display device.
  15. Ono, Koji; Suzawa, Hideomi; Arao, Tatsuya, Electroluminescence display device.
  16. Ono, Koji; Suzawa, Hideomi; Arao, Tatsuya, Electroluminescence display device.
  17. Yamazaki,Shunpei; Koyama,Jun; Yamamoto,Kunitaka; Konuma,Toshimitsu, Electroluminescence display device and method of manufacturing the same.
  18. Ohnuma, Hideto, Exposure mask.
  19. Takayama,Toru; Yamagata,Hirokazu; Koura,Akihiko; Yamazaki,Shunpei, Light emitting device and method of fabricating the same.
  20. Ono, Koji; Suzawa, Hideomi, Metal wiring and method of manufacturing the same, and metal wiring substrate and method of manufacturing the same.
  21. Ono, Koji; Suzawa, Hideomi, Metal wiring and method of manufacturing the same, and metal wiring substrate and method of manufacturing the same.
  22. Ono, Koji; Suzawa, Hideomi, Metal wiring and method of manufacturing the same, and metal wiring substrate and method of manufacturing the same.
  23. Maekawa,Shinji; Akimoto,Kengo, Method for fabricating thin film transistor.
  24. Okamoto, Satoru; Fujii, Teruyuki; Ohnuma, Hideto; Ishizuka, Akihiro, Method for manufacturing semiconductor device.
  25. Okamoto, Satoru; Fujii, Teruyuki; Ohnuma, Hideto; Ishizuka, Akihiro, Method for manufacturing semiconductor device.
  26. Isobe, Atsuo; Murakami, Satoshi; Yamazaki, Shunpei, Method for manufacturing semiconductor device comprising the step of forming nitride/oxide by high-density plasma.
  27. Yamazaki,Shunpei; Suzawa,Hideomi; Ono,Koji; Takayama,Toru, Method of fabricating a light emitting device.
  28. Sakama, Mitsunori; Ishimaru, Noriko; Asami, Taketomi; Yamazaki, Shunpei, Method of fabricating a semiconductor device.
  29. Arai, Yasuyuki; Yamazaki, Shunpei, Method of forming gate insulating film for thin film transistors using plasma oxidation.
  30. Suzawa,Hideomi; Ono,Koji; Ohnuma,Hideto; Yamagata,Hirokazu; Yamazaki,Shunpei, Method of forming thin film transistors having tapered gate electrode and curved insulating film.
  31. Ohnuma, Hideto; Uehara, Ichiro, Method of manufacturing a semiconductor device.
  32. Ohnuma, Hideto; Uehara, Ichiro, Method of manufacturing a semiconductor device.
  33. Ohnuma,Hideto; Uehara,Ichiro, Method of manufacturing a semiconductor device.
  34. Ohnuma,Hideto; Uehara,Ichiro, Method of manufacturing a semiconductor device.
  35. Ohnuma,Hideto; Uehara,Ichiro, Method of manufacturing a semiconductor device.
  36. Yamazaki, Shunpei; Nakamura, Osama; Kajiwara, Masayuki; Koezuka, Junichi; Dairiki, Koji; Mitsuki, Toru; Takayama, Toru; Ohnuma, Hideto; Asami, Taketomi; Ichijo, Mitsuhiro, Method of manufacturing a semiconductor device.
  37. Yamazaki,Shunpei; Ohnuma,Hideto; Dairiki,Koji; Mitsuki,Toru; Takayama,Toru; Akimoto,Kengo, Method of manufacturing a semiconductor device.
  38. Hamada,Takashi; Murakami,Satoshi; Yamazaki,Shunpei; Nakamura,Osamu; Kajiwara,Masayuki; Koezuka,Junichi; Takayama,Toru, Method of manufacturing a semiconductor device comprising doping steps using gate electrodes and resists as masks.
  39. Ono,Koji; Suzawa,Hideomi; Arao,Tatsuya, Method of manufacturing semiconductor device.
  40. Yamazaki,Shunpei; Mitsuki,Toru, Method of manufacturing semiconductor device.
  41. Imahayashi, Ryota; Furukawa, Shinobu; Isobe, Atsuo; Arai, Yasuyuki; Yamazaki, Shunpei, Organic transistor, manufacturing method of semiconductor device and organic transistor.
  42. Imahayashi, Ryota; Furukawa, Shinobu; Isobe, Atsuo; Arai, Yasuyuki; Yamazaki, Shunpei, Organic transistor, manufacturing method of semiconductor device and organic transistor.
  43. Yamazaki,Shunpei; Ohtani,Hisashi; Mitsuki,Toru; Ohnuma,Hideto; Takano,Tamae; Kasahara,Kenji; Dairiki,Koji, Process for manufacturing a semiconductor device.
  44. Yamazaki,Shunpei; Ohtani,Hisashi; Mitsuki,Toru; Ohnuma,Hideto; Takano,Tamae; Kasahara,Kenji; Dairiki,Koji, Process for manufacturing a semiconductor device.
  45. Yamazaki,Shunpei; Arai,Yasuyuki, Process for producing a photoelectric conversion device that includes using a gettering process.
  46. Ono, Koji; Suzawa, Hideomi; Arao, Tatsuya, Semiconductor device.
  47. Kuwabara,Hideaki, Semiconductor device and electronic device.
  48. Yamazaki, Shunpei; Arai, Yasuyuki; Koyama, Jun, Semiconductor device and fabrication method thereof.
  49. Yamazaki, Shunpei; Arai, Yasuyuki; Koyama, Jun, Semiconductor device and fabrication method thereof.
  50. Yamazaki, Shunpei; Arai, Yasuyuki; Koyama, Jun, Semiconductor device and fabrication method thereof.
  51. Yamazaki, Shunpei; Arai, Yasuyuki; Koyama, Jun, Semiconductor device and fabrication method thereof.
  52. Yamazaki, Shunpei; Arai, Yasuyuki; Koyama, Jun, Semiconductor device and fabrication method thereof.
  53. Yamazaki, Shunpei; Murakami, Satoshi; Koyama, Jun; Tanaka, Yukio; Kitakado, Hidehito; Ohnuma, Hideto, Semiconductor device and fabrication method thereof.
  54. Yamazaki, Shunpei; Murakami, Satoshi; Koyama, Jun; Tanaka, Yukio; Kitakado, Hidehito; Ohnuma, Hideto, Semiconductor device and fabrication method thereof.
  55. Yamazaki, Shunpei; Murakami, Satoshi; Koyama, Jun; Tanaka, Yukio; Kitakado, Hidehito; Ohnuma, Hideto, Semiconductor device and fabrication method thereof.
  56. Yamazaki, Shunpei; Murakami, Satoshi; Koyama, Jun; Tanaka, Yukio; Kitakado, Hidehito; Ohnuma, Hideto, Semiconductor device and fabrication method thereof.
  57. Yamazaki, Shunpei; Murakami, Satoshi; Koyama, Jun; Tanaka, Yukio; Kitakado, Hidehito; Ohnuma, Hideto, Semiconductor device and fabrication method thereof.
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  60. Yamazaki, Shunpei; Murakami, Satoshi; Koyama, Jun; Tanaka, Yukio; Kitakado, Hidehito; Ohnuma, Hideto, Semiconductor device and fabrication method thereof.
  61. Yamazaki, Shunpei; Murakami, Satoshi; Koyama, Jun; Tanaka, Yukio; Kitakado, Hidehito; Ohnuma, Hideto, Semiconductor device and fabrication method thereof.
  62. Yamazaki,Shunpei; Murakami,Satoshi; Koyama,Jun; Tanaka,Yukio; Kitakado,Hidehito; Ohnumo,Hideto, Semiconductor device and fabrication method thereof.
  63. Nakamura, Osamu; Kajiwara, Masayuki; Yamazaki, Shunpei; Ohnuma, Hideto, Semiconductor device and manufacturing method of the same.
  64. Nakamura,Osamu; Kajiwara,Masayuki; Yamazaki,Shunpei; Ohnuma,Hideto, Semiconductor device and manufacturing method of the same.
  65. Takano, Tamae; Isobe, Atsuo, Semiconductor device and manufacturing method of the same.
  66. Takano, Tamae; Isobe, Atsuo, Semiconductor device and manufacturing method of the same.
  67. Takano, Tamae; Isobe, Atsuo, Semiconductor device and manufacturing method of the same.
  68. Yamazaki, Shunpei; Ohara, Hiroki; Sakata, Junichiro; Sasaki, Toshinari; Hosoba, Miyuki, Semiconductor device and manufacturing method the same.
  69. Kitakado, Hidehito; Hayakawa, Masahiko; Yamazaki, Shunpei; Asami, Taketomi, Semiconductor device and manufacturing method thereof.
  70. Kitakado, Hidehito; Hayakawa, Masahiko; Yamazaki, Shunpei; Asami, Taketomi, Semiconductor device and manufacturing method thereof.
  71. Kitakado, Hidehito; Kawasaki, Ritsuko; Kasahara, Kenji, Semiconductor device and manufacturing method thereof.
  72. Kitakado, Hidehito; Kawasaki, Ritsuko; Kasahara, Kenji, Semiconductor device and manufacturing method thereof.
  73. Kitakado, Hidehito; Kawasaki, Ritsuko; Kasahara, Kenji, Semiconductor device and manufacturing method thereof.
  74. Nagao,Ritsuko; Hayakawa,Masahiko, Semiconductor device and manufacturing method thereof.
  75. Nagao,Ritsuko; Hayakawa,Masahiko, Semiconductor device and manufacturing method thereof.
  76. Ohnuma, Hideto; Monoe, Shigeharu; Yamazaki, Shunpei, Semiconductor device and manufacturing method thereof.
  77. Ohnuma, Hideto; Monoe, Shigeharu; Yamazaki, Shunpei, Semiconductor device and manufacturing method thereof.
  78. Ono, Koji; Suzawa, Hideomi; Arao, Tatsuya, Semiconductor device and manufacturing method thereof.
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  93. Yamazaki,Shunpei; Suzawa,Hideomi; Kusuyama,Yoshihiro; Ono,Koji; Koyama,Jun, Semiconductor device and manufacturing method thereof.
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  99. Hayakawa, Masahiko; Sakama, Mitsunori; Toriumi, Satoshi, Semiconductor device and method for manufacturing the same.
  100. Hayakawa, Masahiko; Sakama, Mitsunori; Toriumi, Satoshi, Semiconductor device and method for manufacturing the same.
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  113. Yamazaki, Shunpei; Arai, Yasuyuki; Koyama, Jun, Semiconductor device comprising a pixel unit including an auxiliary capacitor.
  114. Yamazaki, Shunpei; Murakami, Satoshi; Koyama, Jun; Tanaka, Yukio; Kitakado, Hidehito, Semiconductor device comprising a second organic film over a third insulating film wherein the second organic film overlaps with a channel formation region and a second conductive film.
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  124. Isobe,Atsuo; Yamazaki,Shunpei, Thin film transistor and manufacturing method thereof.
  125. Suzawa, Hideomi; Ono, Koji, Wiring and manufacturing method thereof, semiconductor device comprising said wiring, and dry etching method.
  126. Suzawa, Hideomi; Ono, Koji, Wiring and manufacturing method thereof, semiconductor device comprising said wiring, and dry etching method.
  127. Suzawa, Hideomi; Ono, Koji, Wiring and manufacturing method thereof, semiconductor device comprising said wiring, and dry etching method.
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