초록 ▼

A rechargeable cell is connected in series connection with and thermally coupled to a usually closed thermo-sensitive circuit breaker, so that, once a temperature in the cell that is being charged to saturation rises to a predetermined level, the heat thereby produced will cut off the usually closed

A rechargeable cell is connected in series connection with and thermally coupled to a usually closed thermo-sensitive circuit breaker, so that, once a temperature in the cell that is being charged to saturation rises to a predetermined level, the heat thereby produced will cut off the usually closed thermo-sensitive circuit breaker, a heat generating resistor that is in parallel with and thermally coupled to the usually closed contacts on the usually closed circuit breaker will produce, as current passes through it, a heating effect serving to open the usually closed thermo-sensitive circuit breaker, the same heat generating resistor in the meantime restricting a topping current that is released from the rechargeable cell, thereby holding usually closed circuit breaker open for an extended period as said battery cools following opening of said usually closed circuit breaker.

대표청구항 ▼

A rechargeable cell is connected in series connection with and thermally coupled to a usually closed thermo-sensitive circuit breaker, so that, once a temperature in the cell that is being charged to saturation rises to a predetermined level, the heat thereby produced will cut off the usually closed

A rechargeable cell is connected in series connection with and thermally coupled to a usually closed thermo-sensitive circuit breaker, so that, once a temperature in the cell that is being charged to saturation rises to a predetermined level, the heat thereby produced will cut off the usually closed thermo-sensitive circuit breaker, a heat generating resistor that is in parallel with and thermally coupled to the usually closed contacts on the usually closed circuit breaker will produce, as current passes through it, a heating effect serving to open the usually closed thermo-sensitive circuit breaker, the same heat generating resistor in the meantime restricting a topping current that is released from the rechargeable cell, thereby holding usually closed circuit breaker open for an extended period as said battery cools following opening of said usually closed circuit breaker. l from a surface using an atmospheric downstream plasma jet system as claimed in claim 1, wherein the high energy and high density plasma is a form or derivative of arc plasma. 8. A method of removing metal-containing polymeric material from a surface using a plasma jet system according to claim 1, wherein the reactant gas is introduced through a nozzle. 9. A method of removing metal-containing polymeric material from a surface using a plasma jet system according to claim 8, wherein the distance between the nozzle and the plasma is between 5 and 15 mm. 10. A method of removing polymeric material from a surface using an atmospheric downstream plasma jet system, comprising: generating high density and high energy plasma; passing a reaction gas through an atmospheric plasma zone of the plasma jet system in which the high density and high energy plasma was generated to generate radicals having high energy and high density, wherein the radical density is higher than about 1018/cm3and the radical energy is about 0.1 eV; and placing the surface at a distance from the plasma zone, whereby ionic reaction on the surface is minimized while the removing action of the radicals on the surface is maintained. 11. A method of removing polymeric material from a surface using a plasma jet system according to claim 10, wherein the radicals include oxygen radicals. 12. A method of removing polymeric material from a surface using a plasma jet system according to claim 10, wherein the temperature of the surface is between about 100 and about 300 degrees centigrade. 13. A method of removing polymeric material from a surface using a plasma jet system according to claim 10, wherein the reactant gas is oxygen, and the reactant gas is introduced at a rate between about 1 and 5 liters per minute. 14. A method of removing polymeric material from a surface using a plasma jet system according to claim 10, wherein a distance between a torch of the plasma jet system and the surface is between 80 and 200 mm. 15. A method of removing polymeric material from a surface using a plasma jet system according to claim 10, wherein the surface is a front surface of a semiconductor wafer. 16. A method of removing polymeric material from a surface using a plasma jet system according to claim 10, wherein the reactant gas is introduced through a nozzle. 17. A method of removing polymeric material from a surface using a plasma jet system according to claim 16, wherein the distance between the nozzle and the plasma is between 5 and 15 mm. 18. A method of removing polymeric material from a surface using an atmospheric downstream plasma jet system as claimed in claim 10, wherein the high energy and high density plasma is a form or derivative of arc plasma. 19. A method of removing photoresists or other organic/polymer materials having a chemical structure similar to those of photoresists from a surface using an atmospheric downstream plasma jet system, wherein the photoresist or other organic/polymer materials have been hardened by ion beams or atomic/molecular fluxes of any kind during device manufacturing, comprising: generating radicals having high energy and high density from atmospheric plasma of high energy and high density by introducing a reactant gas to the plasma, wherein the radical density is higher than about 1018/cm3and the radical energy is about 0.1 eV; and placing the surface at a distance from the plasma, whereby ionic reaction on the surface is minimized while the removing action of the radicals on the surface is maintained. 20. A method of removing photoresists or other organic/polymer materials having a chemical structure similar to those of photoresists from a surface using an atmospheric downstream plasma jet system as claimed in claim 19, wherein the high energy and high density plasma is a form or derivative of arc plasma. 21. A method of removing photoresists or other organic/polymer materials hav