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Diamond coatings on reactor wall and method of manufacturing thereof 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C23C-014/00
  • B32B-009/00
  • H05K-003/00
출원번호 US-0749925 (2000-12-29)
발명자 / 주소
  • O'Donnell, Robert J.
  • Daugherty, John E.
  • Chang, Christopher C.
출원인 / 주소
  • Lam Research Corporation
대리인 / 주소
    Burns, Doane, Swecker & Mathis, LLP
인용정보 피인용 횟수 : 57  인용 특허 : 37

초록

A corrosion resistant component of semiconductor processing equipment such as a plasma chamber includes a diamond containing surface and process for manufacture thereof.

대표청구항

A corrosion resistant component of semiconductor processing equipment such as a plasma chamber includes a diamond containing surface and process for manufacture thereof. about 4.5 parts per million soluble phosphorus and at least about 40 percent by volume alum-containing residual solids; and tops

이 특허에 인용된 특허 (37)

  1. Koch George R. (Los Altos CA), Adjustable electrode plasma processing chamber.
  2. Oehrlein Gottlieb Stefan ; Vender David,NLX ; Zhang Ying ; Haverlag Marco,NLX, Apparatus for hot wall reactive ion etching using a dielectric or metallic liner with temperature control to achieve pr.
  3. Gadgil Prashant ; Flanner Janet M. ; Jordon John P. ; Doe Adrian ; Chebi Robert, Apparatus for reducing process drift in inductive coupled plasma etching such as oxide layer.
  4. Wang Hougong ; Ding Peijun, Ceramic coated metallic insulator particularly useful in a plasma sputter reactor.
  5. Dornfest Charles N. (Fremont CA) White John M. (Hayward CA) Bercaw Craig A. (Sunnyvale CA) Tomosawa Hiroyuki Steven (San Jose CA) Fodor Mark A. (Los Gatos CA), Ceramic protection for heated metal surfaces of plasma processing chamber exposed to chemically aggressive gaseous envir.
  6. Wong Manus K. ; Chew Sandy M., Corrosion resistant apparatus.
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  8. Lenz Eric H. (San Jose CA) Calvisi Michael L. (Union City CA) Miller Ivo A. (San Jose CA) Frazier Robert A. (Fremont CA), Electrode clamping assembly and method for assembly and use thereof.
  9. Tracy David H. (Norwalk CT) Smith Donald L. (Palo Alto CA), Electrode for plasma etching system.
  10. Hijikata Isamu (Kanagawa JPX) Uehara Akira (Kanagawa JPX) Samezawa Mitsuo (Kanagawa JPX), Electrode for use in the treatment of an object in a plasma.
  11. Laporte Philippe (Echirolles FRX) Peccoud Louise (Claix FRX), Enclosure for the treatment, and particularly for the etching of substrates by the reactive plasma method.
  12. Chen Ching-Hwa ; Liu David ; Christensen Mark J., Gas dispersion window for plasma apparatus and method of use thereof.
  13. Dearnaley Geoffrey (San Antonio TX), Ion beam assisted method of producing a diamond like carbon coating.
  14. Shufflebotham Paul Kevin ; Barnes Michael Scott, Low voltage electrostatic clamp for substrates such as dielectric substrates.
  15. Ogle John S. (Milpitas CA), Method and apparatus for producing magnetically-coupled planar plasma.
  16. Robertson Robert (Palo Alto CA) Law Kam S. (Union City CA) White John M. (Hayward CA), Method and apparatus for protection of conductive surfaces in a plasma processing reactor.
  17. Ravi Kramadhati, Method and apparatus for the use of diamond films as dielectric coatings on electrostatic chucks.
  18. Erskine David (Mountain View CA) Mundt Randall S. (Pleasanton CA) Rafinejad Dariush (Los Altos Hills CA) Wong Vernon W. H. (Mountain View CA) Yin Gerald Z. (San Jose CA), Method and system for clamping semiconductor wafers.
  19. David Moses M., Method for coating diamond-like networks onto particles.
  20. Neuville Stephane,FRX, Method for depositing a hard protective coating.
  21. Ootuki Hayashi (Yamanashi JPX), Method for treating surface of aluminum material and plasma treating apparatus.
  22. Chen C. J. (Taipei TWX), Method of bonding copper and resin.
  23. Steger Robert J. (San Jose CA), Method of forming plasma etch apparatus with conductive coating on inner metal surfaces of chamber to provide protection.
  24. Zhao Jun ; Cho Tom ; Guo Xin Sheng ; Tabata Atsushi,JPX ; Qiao Jianmin ; Schreiber Alex, Method of reducing residue accumulation in CVD chamber using ceramic lining.
  25. Nitescu Petru N. (Milpitas CA) Nguyen Hoan Hai (Milpitas CA), Plasma etching reactor with surface protection means against erosion of walls.
  26. Kaji Tetsunori,JPX ; Kanai Saburo,JPX ; Ito Satoshi,JPX ; Hamasaki Ryoji,JPX ; Ono Tetsuo,JPX ; Usui Tatehito,JPX ; Takahashi Kazue,JPX ; Tago Kazutami,JPX, Plasma processing apparatus and plasma processing method in which a part of the processing chamber is formed using a pre.
  27. Tomoyasu Masayuki,JPX ; Himori Shinji,JPX, Plasma processing method.
  28. Feng Zhu (Albany CA) Brewer Marilee (Goleta CA) Brown Ian (Berkeley CA) Komvopoulos Kyriakos (Orinda CA), Pretreatment process for forming a smooth surface diamond film on a carbon-coated substrate.
  29. Tappan James E. (Milpitas) Yasuda Arthur K. (San Francisco) Denison Dean R. (San Jose) Mundt Randall S. (Pleasanton CA), Reaction chamber design and method to minimize particle generation in chemical vapor deposition reactors.
  30. Mihara Satoru,JPX, Semiconductor device manufacturing method including plasma etching step.
  31. Chang Chow Ling, Semiconductor processing chamber having diamond coated components.
  32. Lu Hao A ; Han Nianci ; Yin Gerald Z ; Wu Robert W, Silicon carbide composite article particularly useful for plasma reactors.
  33. Chen Lee (Poughkeepsie NY) Hendricks Charles J. (Wappingers Falls NY) Mathad Gangadhara S. (Poughkeepsie NY) Poloncic Stanley J. (Wappingers Falls NY), Single wafer plasma etch reactor.
  34. Gruen Dieter M. ; Krauss Alan R. ; Erdemir Ali ; Bindal Cuma ; Zuiker Christopher D., Smooth diamond films as low friction, long wear surfaces.
  35. Wicker Thomas E. ; Cook Joel M. ; Maraschin Robert A. ; Kennedy William S. ; Benjamin Neil, Temperature controlling method and apparatus for a plasma processing chamber.
  36. Benjamin Neil ; Hylbert Jon ; Mangano Stefano, Universal vacuum chamber including equipment modules such as a plasma generating source, vacuum pumping arrangement and.
  37. Ravi Kramadhati, Use of carbon-based films in extending the lifetime of substrate processing system components.

이 특허를 인용한 특허 (57)

  1. Saigusa, Hidehito; Takase, Taira; Mitsuhashi, Kouji; Nakayama, Hiroyuki, Apparatus for an improved deposition shield in a plasma processing system.
  2. Escher,Gary; Allen,Mark A., Barrier layer for a processing element and a method of forming the same.
  3. O'Donnell, Robert J.; Daugherty, John E.; Chang, Christopher C., Boron nitride/yttria composite components of semiconductor processing equipment and method of manufacturing thereof.
  4. Sato, Michio; Yamanobe, Takashi, Carbon film coated member.
  5. Murata, Takashi; Hirata, Takuya; Kano, Makoto; Mabuchi, Yutaka; Hamada, Takahiro; Yamaguchi, Masashi, Chain drive system.
  6. Parkhe, Vijay D.; Ahmann, Kurt J.; Tsai, Matthew C.; Sansoni, Steve, Coating for reducing contamination of substrates during processing.
  7. Parkhe, Vijay D.; Ahmann, Kurt J; Tsai, Matthew C; Sansoni, Steve, Cooling pedestal with coating of diamond-like carbon.
  8. Hamada,Takahiro; Mabuchi,Yutaka; Kano,Makoto; Miyake,Hidenori, Engine piston-pin sliding structure.
  9. Brondum, Klaus; Welty, Richard P.; Jonte, Patrick B.; Richmond, Douglas S.; Thomas, Kurt, Faucet.
  10. Brondum, Klaus; Welty, Richard P.; Jonte, Patrick B.; Richmond, Douglas S., Faucet component with coating.
  11. Brondum, Klaus; Welty, Richard P.; Jonte, Patrick B.; Richmond, Douglas S., Faucet component with coating.
  12. Brondum, Klaus; Welty, Richard P.; Jonte, Patrick B.; Richmond, Douglas S., Faucet component with coating.
  13. Brondum, Klaus, Faucet with wear-resistant valve component.
  14. Hamada,Takahiro; Mabuchi,Yutaka; Kano,Makoto; Azuma,Yuuji, Fuel injection valve.
  15. Okamoto, Yusuke; Yasuda, Yoshiteru; Yamaguchi, Takuro; Kano, Makoto, Gear.
  16. Parkhe, Vijay D; Ahmann, Kurt J; Tsai, Matthew C; Sansoni, Steve, Heat exchange pedestal with coating of diamond-like material.
  17. Mitsuhashi, Kouji; Nakayama, Hiroyuki; Nagayama, Nobuyuki; Moriya, Tsuyoshi; Nagaike, Hiroshi, Internal member of a plasma processing vessel.
  18. Mitsuhashi, Kouji; Nakayama, Hiroyuki; Nagayama, Nobuyuki; Moriya, Tsuyoshi; Nagaike, Hiroshi, Internal member of a plasma processing vessel.
  19. Mitsuhashi, Kouji; Nakayama, Hiroyuki; Nagayama, Nobuyuki; Moriya, Tsuyoshi; Nagaike, Hiroshi, Internal member of a plasma processing vessel.
  20. Kim, Il Kyoung; Huh, No Hyun; Lee, Tae Won; Park, Sung Wook; Yun, Ki Young; Lee, Won Soon; Yoon, Young Ha; Im, Tae Sub, Ion implanter with etch prevention member(s).
  21. Konishi, Shozaburo; Kano, Makoto; Yasuda, Yoshiteru; Mabuchi, Yutaka; Hamada, Takahiro; Takeshima, Shigeki; Tsushima, Kenji, Low-friction sliding mechanism.
  22. Konishi,Shozaburo; Kano,Makoto; Yasuda,Yoshiteru; Mabuchi,Yutaka; Hamada,Takahiro; Takeshima,Shigeki; Tsushima,Kenji, Low-friction sliding mechanism.
  23. Martin, Jean Michel; Takeshima, Shigeki; Konishi, Shozaburo; Kano, Makoto; Mabuchi, Yutaka; Ishikawa, Takao; Ueno, Takafumi; Nakamura, Kiyotaka; Hamada, Takahiro, Low-friction sliding mechanism, low-friction agent composition and method of friction reduction.
  24. Martin, Jean Michel; Kano, Saihei; Kano, Makoto; Yasuda, Yoshiteru; Okamoto, Yusuke; Mabuchi, Yutaka; Ueno, Takafumi, Low-friction sliding member and low-friction sliding mechanism using same.
  25. Ishikawa, Takao; Nakamura, Kiyotaka; Kano, Makoto; Ueno, Takafumi, Low-friction sliding member in transmission, and transmission oil therefor.
  26. Ishikawa,Takao; Nakamura,Kiyotaka; Kano,Makoto; Ueno,Takafumi, Low-friction sliding member in transmission, and transmission oil therefor.
  27. Nishimoto, Shinya; Mitsuhashi, Kouji; Nakayama, Hiroyuki, Method and apparatus for an improved baffle plate in a plasma processing system.
  28. Nishimoto, Shinya; Mitsuhashi, Kouji; Nakayama, Hiroyuki, Method and apparatus for an improved baffle plate in a plasma processing system.
  29. Nishimoto,Shinya; Mitsuhashi,Kouji; Nakayama,Hiroyuki, Method and apparatus for an improved baffle plate in a plasma processing system.
  30. Saigusa, Hidehito; Takase, Taira; Mitsuhashi, Kouji; Nakayama, Hiroyuki, Method and apparatus for an improved baffle plate in a plasma processing system.
  31. Saigusa,Hidehito; Takase,Taira; Mitsuhashi,Kouji; Nakayama,Hiroyuki, Method and apparatus for an improved baffle plate in a plasma processing system.
  32. Saigusa, Hidehito; Takase, Taira; Mitsuhashi, Kouji; Nakayama, Hiroyuki, Method and apparatus for an improved bellows shield in a plasma processing system.
  33. Saigusa,Hidehito; Takase,Taira; Mitsuhashi,Kouji; Nakayama,Hiroyuki, Method and apparatus for an improved bellows shield in a plasma processing system.
  34. Saigusa,Hidehito; Takase,Taira; Mitsuhashi,Kouji; Nakayama,Hiroyuki, Method and apparatus for an improved deposition shield in a plasma processing system.
  35. Nishimoto, Shinya; Mitsuhashi, Kouji; Saigusa, Hidehito; Takase, Taira; Nakayama, Hiroyuki, Method and apparatus for an improved optical window deposition shield in a plasma processing system.
  36. Nishimoto,Shinya; Mitsuhashi,Kouji; Saigusa,Hidehito; Takase,Taira; Nakayama,Hiroyuki, Method and apparatus for an improved optical window deposition shield in a plasma processing system.
  37. Saigusa, Hidehito; Takase, Taira; Mitsuhashi, Kouji; Nakayama, Hiroyuki, Method and apparatus for an improved upper electrode plate in a plasma processing system.
  38. Nishimoto, Shinya; Mitsuhashi, Kouji; Nakayama, Hiroyuki, Method and apparatus for an improved upper electrode plate with deposition shield in a plasma processing system.
  39. Nishimoto,Shinya; Mitsuhashi,Kouji; Nakayama,Hiroyuki, Method and apparatus for an improved upper electrode plate with deposition shield in a plasma processing system.
  40. Fink, Steven T., Method and apparatus for improved baffle plate.
  41. Escher, Gary; Allen, Mark A.; Kudo, Yasuhisa, Method for adjoining adjacent coatings on a processing element.
  42. Ji,Bing; Motika,Stephen Andrew; Wu,Dingjun; Karwacki, Jr.,Eugene Joseph; Roberts,David Allen, Method to protect internal components of semiconductor processing equipment using layered superlattice materials.
  43. Nishimura,Kimio; Mabuchi,Yutaka; Hamada,Takahiro; Kano,Makoto; Miyake,Hidenori; Ota,Tomohito, Piston for internal combustion engine.
  44. Fink, Steven T., Plasma processing system and baffle assembly for use in plasma processing system.
  45. Otsuki, Hayashi, Processing apparatus with a chamber having therein a high-corrosion-resistant sprayed film.
  46. Otsuki, Hayashi, Processing apparatus with a chamber having therein a high-corrosion-resistant sprayed film.
  47. Ueno,Takafumi; Kano,Makoto; Hamada,Takahiro, Refrigerant compressor and friction control process therefor.
  48. Kano,Makoto; Mabuchi,Yutaka; Hamada,Takahiro, Rolling element.
  49. Miyake,Shojiro; Yasuda,Yoshiteru; Kano,Makoto; Mabuchi,Yutaka, Slidably movable member and method of producing same.
  50. Hamada, Takahiro; Kano, Makoto; Mabuchi, Yutaka, Sliding member and production process thereof.
  51. Hamada,Takahiro; Kano,Makoto; Mabuchi,Yutaka, Sliding member and production process thereof.
  52. Hamada,Takahiro; Mabuchi,Yutaka; Kano,Makoto; Yasuda,Yoshiteru; Okamoto,Yusuke, Sliding structure for automotive engine.
  53. Nishimura,Kimio; Mabuchi,Yutaka; Murata,Takashi; Hirata,Takuya; Kano,Makoto; Hamada,Takahiro; Yamaguchi,Masashi, Structure for connecting piston to crankshaft.
  54. Brondum, Klaus; Welty, Richard P.; Richmond, Douglas S.; Jonte, Patrick B.; Thomas, Kurt, Valve component for faucet.
  55. Brondum, Klaus; Welty, Richard P.; Richmond, Douglas S.; Jonte, Patrick B.; Thomas, Kurt, Valve component for faucet.
  56. Nomura,Shin; Miura,Takahiro; Kano,Makoto; Mabuchi,Yutaka; Hamada,Takahiro; Murakami,Miki, Valve train for internal combustion engine.
  57. O'Donnell,Robert J.; Chang,Christopher C.; Daugherty,John E., Zirconia toughened ceramic components and coatings in semiconductor processing equipment and method of manufacture thereof.
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