A cornice device for building structures including a crown member and a connector member. The crown member has a first end configured to attach to the roof portion of the building structure and a second end. The crown member may include an optional fascia board and an optional roof nailer member att
A cornice device for building structures including a crown member and a connector member. The crown member has a first end configured to attach to the roof portion of the building structure and a second end. The crown member may include an optional fascia board and an optional roof nailer member attached to the fascia board. The connector member comprises a first leg configured to cooperate with the second end of the crown member. The second leg of the connector member is configured to couple to the outer wall of the building structure. The crown member and the connector member are configured to flex during installation to accommodate for various framing variances. The cornice device also includes means for discharging water from the cornice device which is spaced apart the outer wall of the building structure so as to keep the water discharged from and off the cornice device from damaging the outer wall. In one embodiment, the means for discharging water from the cornice device comprises a water trough and a plurality of apertures formed in the connector member, the crown member, or both. The apertures are configured to allow water to pass therethrough and also act as a means for ventilating a building structure. The apertures are substantially hidden from view. The means for discharging water from the cornice device may also comprise a drip lip which is configured to prevent water discharged off the cornice device from staining, discoloring, or damaging the outer wall of the structure. In one embodiment, the drip lip is formed by the second end of the crown member and the first leg of the connector member.
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A cornice device for building structures including a crown member and a connector member. The crown member has a first end configured to attach to the roof portion of the building structure and a second end. The crown member may include an optional fascia board and an optional roof nailer member att
A cornice device for building structures including a crown member and a connector member. The crown member has a first end configured to attach to the roof portion of the building structure and a second end. The crown member may include an optional fascia board and an optional roof nailer member attached to the fascia board. The connector member comprises a first leg configured to cooperate with the second end of the crown member. The second leg of the connector member is configured to couple to the outer wall of the building structure. The crown member and the connector member are configured to flex during installation to accommodate for various framing variances. The cornice device also includes means for discharging water from the cornice device which is spaced apart the outer wall of the building structure so as to keep the water discharged from and off the cornice device from damaging the outer wall. In one embodiment, the means for discharging water from the cornice device comprises a water trough and a plurality of apertures formed in the connector member, the crown member, or both. The apertures are configured to allow water to pass therethrough and also act as a means for ventilating a building structure. The apertures are substantially hidden from view. The means for discharging water from the cornice device may also comprise a drip lip which is configured to prevent water discharged off the cornice device from staining, discoloring, or damaging the outer wall of the structure. In one embodiment, the drip lip is formed by the second end of the crown member and the first leg of the connector member. A method for forming a wafer level package according to claim 1, wherein said dielectric material layer is deposited by a technique selected from the group consisting of coating, printing and laminating. 11. A method for forming a wafer level package according to claim 1, wherein said dielectric material layer is deposited to a thickness between about 2 μm and about 20 μm. 12. A method for forming a wafer level package according to claim 1, wherein said dielectric material layer is deposited of a material selected from the group consisting of polyimide, BCB and other polymeric materials. 13. A method for forming a wafer level package according to claim 1, wherein said second plurality of bond pads defined are input/output pads. 14. A method for forming a wafer level package according to claim 1, wherein said second plurality of bond pads are defined by a photolithographic method. 15. A method for forming a wafer level package according to claim 1 further comprising the step of forming ball limiting metallurgy layer on said second plurality of bond pads prior to the planting of solder balls. 16. A method for forming a wafer level package according to claim 1 further comprising the step of depositing a ball limiting metallurgy layer on top of said wafer, and then defining said ball limiting metallurgy layer such that it covers said second plurality of bond pads prior to the planting of said solder balls. 17. A method for forming a wafer level package according to claim 1, wherein said solder balls are planted on said second plurality of bond pads by a technique selected from the group consisting of screen printing, electrodeposition, electroless deposition and stencil printing. 18. A method for forming a wafer level package according to claim 1, wherein said elastic material layer is formed on top of said wafer to a thickness between about 50 μm and about 200 μm. 19. A method for forming a wafer level package according to claim 1, wherein said elastic material layer is formed by a method of printing or coating. 20. A method for forming a wafer level package according to claim 1, wherein said elastic material layer is formed of an elastomer comprising silicone rubber or fluorosilicone rubber. 21. A method for forming a wafer level package according to claim 1 further comprising the step of thermal annealing said elastic material layer until tip portions of said solder balls are exposed from said elastic material layer. 22. A method for forming a wafer level package according to claim 1, wherein said etching step for exposing tip portions of said solder balls is carried out by a dry etching or wet etching process. 23. A method for forming a wafer level package with solder balls on top comprising the steps of: providing a pre-processed silicon wafer having a first plurality of bond pads formed on top situated in a passivation layer, depositing a metal layer to a thickness between about 2 μm and about 10 μm on top of said silicon wafer, defining metal traces in said metal layer by a photolithographic method, forming metal traces from said metal layer in an etching process, depositing a dielectric layer having a thickness between about 2 μm and about 20 μm on top of said metal traces, defining a second plurality of bond pads in the dielectric layer over the metal traces by a photolithographic method, forming said second plurality of bond pads in an etching step over the metal traces, depositing a ball limiting metallurgy layer on top of said second plurality of bond pads, planting solder balls on said ball limiting metallurgy layer and said second plurality of bond pads by a technique selected from the group consisting of screen printing, electrodeposition, electroless deposition and stencil printing, depositing an elastomeric layer having a thickness between about 50 μm and about 200 μm on top of said wafer surface, annealing said elastomeric layer such that tip portions of said solder balls are exposed from s aid elastomeric layer, and exposing substantially tip portions of said solder balls by an etching process. 24. A method for forming a wafer level package with solder balls on a top surface according to claim 23 further comprising the step of increasing a height of the solder balls by a secondary solder ball planting process.
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