초록 ▼

The present invention provides plating solutions, particularly copper plating solutions, designed to provide uniform coatings on substrates and to provide substantially defect free filling of small features formed on substrates with none or low supporting electrolyte, i.e., which include no acid, lo

The present invention provides plating solutions, particularly copper plating solutions, designed to provide uniform coatings on substrates and to provide substantially defect free filling of small features formed on substrates with none or low supporting electrolyte, i.e., which include no acid, low acid, no base, or no conducting salts, and/or high metal ion, e.g., copper, concentration. Defect free filling of features is enhanced by a plating solution containing blends of polyethers ("carrier") and organic divalent sulfur compounds ("accelerator"), wherein the concentration of the carrier ranges from about 0.1 ppm to about 2500 ppm of the plating solution, and the concentration of the accelerator ranges from about 0.05 ppm to about 1000 ppm of the plating solution. The plating solution is further improved by adding an organic nitrogen compound at a concentration from about 0.01 ppm to about 1000 ppm to improve the filling of vias on a resistive substrate. The organic nitrogen is preferably a substituted thiadiazole, which is used at concentrations from 0.1 ppm to about 50 ppm of the plating solution, or a quartenary nitrogen compound, which is used at concentrations from about 0.01 ppm to about 500 ppm.

대표청구항 ▼

The present invention provides plating solutions, particularly copper plating solutions, designed to provide uniform coatings on substrates and to provide substantially defect free filling of small features formed on substrates with none or low supporting electrolyte, i.e., which include no acid, lo

The present invention provides plating solutions, particularly copper plating solutions, designed to provide uniform coatings on substrates and to provide substantially defect free filling of small features formed on substrates with none or low supporting electrolyte, i.e., which include no acid, low acid, no base, or no conducting salts, and/or high metal ion, e.g., copper, concentration. Defect free filling of features is enhanced by a plating solution containing blends of polyethers ("carrier") and organic divalent sulfur compounds ("accelerator"), wherein the concentration of the carrier ranges from about 0.1 ppm to about 2500 ppm of the plating solution, and the concentration of the accelerator ranges from about 0.05 ppm to about 1000 ppm of the plating solution. The plating solution is further improved by adding an organic nitrogen compound at a concentration from about 0.01 ppm to about 1000 ppm to improve the filling of vias on a resistive substrate. The organic nitrogen is preferably a substituted thiadiazole, which is used at concentrations from 0.1 ppm to about 50 ppm of the plating solution, or a quartenary nitrogen compound, which is used at concentrations from about 0.01 ppm to about 500 ppm. ts and gas concentrations of a gas mixture in exhaust gases of an internal combustion engine, comprising: an outer analyzing electrode in communication with the gas mixture; an electrolyte layer in contact with the outer analyzing electrode; an MOxelectrode separated from the outer analyzing electrode by the electrolyte layer and in communication with the gas mixture, wherein MOxis a mixed oxide; a substrate coupled to the outer analyzing electrode; and a gas-permeable tunnel layer having a region directly exposed to the gas mixture, wherein the outer analyzing electrode has a region in contact with the gas-permeable tunnel layer, allowing the gas mixture to be supplied via the gas-permeable tunnel layer to the outer analyzing electrode. 2. The sensor of claim 1, wherein the gas mixture includes HC, NOxand CO. 3. The sensor of claim 1, wherein the gas-permeable tunnel layer covers the outer analyzing electrode. 4. The sensor of claim 1, wherein the outer analyzing electrode is surrounded by at least one of the substrate and the electrolyte layer. 5. The sensor of claim 1, wherein the MOxelectrode is directly exposed to the gas mixture. 6. The sensor of claim 1, wherein the MOxelectrode covers the electrolyte layer. 7. The sensor of claim 1, wherein the gas-permeable tunnel layer includes a gas intake surface which is not covered by the electrolyte layer and is not covered by the MOxelectrode. 8. The sensor of claim 1, wherein the gas-permeable tunnel layer includes ZrO2. 9. The sensor of claim 1, wherein the gas-permeable tunnel layer is doped with a catalytically active material. 10. The sensor of claim 9, wherein the catalytically active material includes a noble metal, a noble-metal alloy and/or a transitional metal oxide. 11. The sensor of claim 10, wherein the transitional metal oxide includes a manganese oxide. 12. The sensor of claim 10, wherein the catalytically active material is present in pores contained in the gas-permeable tunnel layer. 13. The sensor of claim 11, wherein the gas-permeable tunnel layer is present as a diffusion barrier which is permeable to specific gases. 14. The sensor of claim 1, wherein the gas-permeable tunnel layer includes a cavity.