초록 ▼

An improved wire bond with the pond pads of semiconductor devices and the lead fingers of lead frames or an improved conductor lead of a TAB tape bond with the bond pad of a semiconductor device. More specifically, an improved wire bond wherein the bond pad on a surface of the semiconductor device c

An improved wire bond with the pond pads of semiconductor devices and the lead fingers of lead frames or an improved conductor lead of a TAB tape bond with the bond pad of a semiconductor device. More specifically, an improved wire bond wherein the bond pad on a surface of the semiconductor device comprises a layer of copper and at least one layer of metal and/or at least a barrier layer of material between the copper layer and one layer of metal on the copper layer to form a bond pad.

대표청구항 ▼

An improved wire bond with the pond pads of semiconductor devices and the lead fingers of lead frames or an improved conductor lead of a TAB tape bond with the bond pad of a semiconductor device. More specifically, an improved wire bond wherein the bond pad on a surface of the semiconductor device c

An improved wire bond with the pond pads of semiconductor devices and the lead fingers of lead frames or an improved conductor lead of a TAB tape bond with the bond pad of a semiconductor device. More specifically, an improved wire bond wherein the bond pad on a surface of the semiconductor device comprises a layer of copper and at least one layer of metal and/or at least a barrier layer of material between the copper layer and one layer of metal on the copper layer to form a bond pad. Hiramatsu; US-4825093, 19890400, Kiriseko et al.; US-5109149, 19920400, Leung; US-5175774, 19921200, Truax et al.; US-5229306, 19930700, Lindberg et al.; US-5329090, 19940700, Woelki et al.; US-5821167, 19981000, Fukami et al.; US-5876819, 19990300, Kimura et al.; US-6004405, 19991200, Oishi et al., 148/033.2; US-6283374, 20010900, Fantone et al., 235/462.45 .