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The present invention is related to a method for electroless plating Nickel/Gold on aluminium bonding pads of single chips or wafer parts. This method result in uniformly plated singulated chips, single dice or wafer parts in a much more simple and cost-effective way. The proposed method comprises t

The present invention is related to a method for electroless plating Nickel/Gold on aluminium bonding pads of single chips or wafer parts. This method result in uniformly plated singulated chips, single dice or wafer parts in a much more simple and cost-effective way. The proposed method comprises the steps of attaching to die or wafer part to a non-conductive adhesive or substrate.

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1. A method for electroless plating individual chips with bond pads, the method comprising the steps of: providing a carrier and an adhesive; attaching the individual chip to a carrier, the step of attaching consisting of contacting the adhesive with at least a portion of the individual chip; an

1. A method for electroless plating individual chips with bond pads, the method comprising the steps of: providing a carrier and an adhesive; attaching the individual chip to a carrier, the step of attaching consisting of contacting the adhesive with at least a portion of the individual chip; and electroless plating the bond pads of said individual chip. 2. A method as recited in claim 1, further comprising the step of: detaching the individual chip from the carrier. 3. A method as recited in claim 1, wherein a tape includes the carrier and adhesive. 4. A method as recited in claim 2, wherein said chip is formed in or on a conductive substrate. 5. A method as recited in claim 4, wherein said adhesive is a non-conducting adhesive. 6. A method as recited in claim 5, wherein said non-conducting adhesive is a pressure-sensitive adhesive. 7. A method as recited in claim 6, wherein said step of electroless plating the bond pads is performed at a process temperature in a plating bath, and wherein said pressure-sensitive adhesive remains operable above the process temperature of the plating bath. 8. A method as recited in claim 7, wherein said pressure-sensitive adhesive remains operable above 100° Celsius. 9. A method as recited in claim 6, wherein said carrier is a non-conductive carrier. 10. A method as recited in claim 9, wherein said carrier has a volume resistivity of at least 10 MOhm.cm and a surface resistivity of at least 1 Mohm. 11. A method as recited in claim 10, wherein said step of electroless plating the bond pads is performed at a process temperature in a plating bath, and wherein said carrier maintains its integrity at the process temperature of the plating bath. 12. A method as recited in claim 11, wherein said carrier maintains its integrity at temperatures above 100° Celsius. 13. A method as recited in claim 12, wherein said carrier is selected from the group of FR-substrates, glass substrate, PCB substrates, polyamide substrates, and ceramic substrates. 14. A method as recited in claim 11, wherein said carrier is selected from the group of FR-substrates, glass substrate, PCB substrates, polyamide substrates, and ceramic substrates. 15. A method as recited in claim 6, wherein said electroless plating process is an electroless nickel plating process. 16. Devices produced from the methods of claim 2. 17. A method for electroless plating at least two chips, the chips having bond pads, the method comprising the steps of: attaching the chips to a carrier; electroless plating the bond pads of the chips; and dicing to separate the chips, wherein the steps of electroless plating the bond pads and dicing are performed with the same carrier. 18. A method as recited in claim 17, wherein the chips comprise a wafer, wherein the step of attaching includes attaching the carrier to the wafer, and wherein the step of dicing includes dicing the wafer. 19. A method as recited in claim 17, wherein the step of electroless plating of the bond pads is performed before the step of dicing the wafer. 20. A method as recited in claim 17, wherein the step of dicing the wafer is performed before the step of electroless plating of the bond pads. 21. A method as recited in claim 17, wherein the step of attaching consists of contacting the adhesive with at least a portion of the individual chip. 22. A method as recited in claim 17, further comprising the step of: detaching the individual chip from the carrier. 23. A method as recited in claim 17, further comprising the step of forming an insulating layer at least to a bottom surface of the wafer. 24. A method as recited in claim 23, wherein said step of forming an insulating layer at least to the bottom surface of the wafer comprises the step of gluing the wafer to a non-conductive carrier using a pressure-sensitive adhesive.