This invention is directed to an organometal compound catalyst that is useful for polymerizing at least one monomer to produce a polymer. The catalyst is produced by combining a titanium, zirconium or hafnium organometal compound, preferably a metallocene, at least one organoaluminum compound, and a
This invention is directed to an organometal compound catalyst that is useful for polymerizing at least one monomer to produce a polymer. The catalyst is produced by combining a titanium, zirconium or hafnium organometal compound, preferably a metallocene, at least one organoaluminum compound, and a treated solid oxide. The treated solid oxide compound contains at least one halogen, zirconium and a solid oxide compound.
대표청구항▼
This invention is directed to an organometal compound catalyst that is useful for polymerizing at least one monomer to produce a polymer. The catalyst is produced by combining a titanium, zirconium or hafnium organometal compound, preferably a metallocene, at least one organoaluminum compound, and a
This invention is directed to an organometal compound catalyst that is useful for polymerizing at least one monomer to produce a polymer. The catalyst is produced by combining a titanium, zirconium or hafnium organometal compound, preferably a metallocene, at least one organoaluminum compound, and a treated solid oxide. The treated solid oxide compound contains at least one halogen, zirconium and a solid oxide compound. aluminum nitride precursor over a surface of each wafer; and subsequent to forming said layer comprising aluminum nitride, annealing said layer at a temperature equal to or greater than said deposition temperature in an atmosphere comprising at least one of H2,N2,and NH3at a pressure of between about 200 millitorr and 25 atmospheres. 13. The process of claim 12 further comprising introducing a carbon-containing gas proximate said surface of each of said at least two wafers during said introduction of said aluminum nitride precursor. 14. The process of claim 13 wherein said introduction of said carbon-containing gas comprises introducing at least one of CH4,CO2,acetylene, and ethylene. 15. The process of claim 12 wherein said formation of said layer comprising aluminum nitride is a first deposition and forms a first layer comprising aluminum nitride layer and said annealing is a first anneal, and said process, with said at least two wafers in said common location, further comprises: introducing an aluminum nitride precursor into said diffusion furnace subsequent to said first anneal; forming a second layer comprising aluminum nitride from said aluminum nitride precursor over a surface of each wafer at about said deposition temperature; annealing said first and second layers at a temperature equal to or greater than said deposition temperature in an atmosphere comprising at least one of H2,N2,and NH3at a pressure of between about 200 millitorr and 25 atmospheres subsequent to said formation of said second layer comprising aluminum nitride. 16. The process of claim 15 wherein said formation of said second layer comprises forming said second layer such that it contacts said first layer. 17. The process of claim 12 further comprising introducing at least one of N2and argon proximate said surface of each said wafer prior to said introduction of said aluminum nitride precursor. 18. The method of claim 12 wherein said anneal includes ramping said wafers to an anneal temperature at a rate of at least 700° C./minute. 19. The process of claim 12 wherein said anneal comprises increasing said temperature to a deposition temperature of between about 300° C. and about 500° C. 20. A process used to form a conductive layer comprising titanium aluminum nitride, comprising: placing at least two wafers in a common location and, while said at least two wafers are in said common location: increasing a temperature of each of said wafers; introducing a precursor comprising at least one of trimethylethylenediamine tris(dimethylamino)titanium, tetrakisdiethylaminotitanium, and tetrakisdimethylaminotitanium proximate a surface of each of said wafers; and forming a layer comprising titanium aluminum nitride over said surface of each said wafer from said precursor. 21. The process of claim 20 wherein said introduction of said precursor further introduces triethylaluminum. 22. The process of claim 20 further comprising introducing both ammonia and hydrazine proximate said surface of each said wafer subsequent to said placing said at least two wafers in said common location and prior to said introduction of said precursor proximate said surface of each said wafer. 23. The process of claim 20 further comprising providing a carbon-containing gas proximate said surface of each said wafer during said formation of said layer comprising titanium aluminum nitride. 24. The process of claim 23 further comprising doping said layer comprising titanium aluminum nitride with carbon to a concentration of less than 0.1% carbon during said formation of said layer comprising titanium aluminum nitride. 25. The process of claim 20 further comprising photo-defining a capacitor bottom electrode from said layer comprising titanium aluminum nitride. 26. The process of claim 20 further comprising, with said wafers at said common location: introducing a pre cursor comprising triethylaluminum proximate said surface of each said wafer; and forming an aluminum nitride layer from said aluminum nitride precursor over a surface of each wafer. 27. A process for forming a field emitter device, comprising: forming an array of emitter tips on each of a plurality of semiconductor wafers; placing said plurality of wafers in a common location and, while said plurality of wafers are in said common location: increasing a temperature of said plurality of wafers; introducing an aluminum nitride precursor proximate a surface of each of said plurality of wafers; and forming a layer comprising aluminum nitride from said aluminum nitride precursor over each said array of each said wafer. 28. The process of claim 27 wherein said formation of said layer from said aluminum nitride precursor comprises forming a film consisting essentially of aluminum nitride. 29. The process of claim 28 wherein said introduction of said precursor comprises introducing a compound having the form R3Al. 30. The process of claim 29 wherein said introduction of said precursor comprises introducing a material comprising triethylaluminum. 31. The process of claim 27 further comprising introducing at least one of ammonia and hydrazine proximate said surface of each of said plurality of wafers subsequent to said placing said at least two wafers in said common location and prior to said introduction of said precursor. 32. The process of claim 27 wherein said temperature increase of said wafers at said common location increases said temperature to between about 300° C. and about 550° C. 33. A process used during the formation of a field emitter device, comprising: forming an array of emitter tips on each of at least two semiconductor wafer assemblies; placing said at least two semiconductor wafer assemblies in a common location and, while said at least two wafer assemblies are in said common location: increasing a temperature of said wafer assemblies; introducing an aluminum nitride precursor proximate a surface of each of said at least two wafer assembly; and forming a layer comprising aluminum nitride from said aluminum nitride precursor over said array of emitter tips on said surface of each of said at least two semiconductor wafer assemblies. 34. The process of claim 33 wherein said introduction of said precursor comprises introducing a compound in the form R3Al. 35. The process of claim 34 wherein said introduction of said precursor comprises introducing a material comprising triethylaluminum. 36. The process of claim 35 wherein said introduction of said precursor further comprises: introducing at least one of trimethylethylenediamine tris(dimethylamino)titanium, tetrakisdiethylaminotitanium, and tetrakisdimethylaminotitanium; and said formation of said layer comprising aluminum nitride comprises forming a titanium aluminum nitride film. 37. The process of claim 33 further comprising introducing at least one of ammonia and hydrazine proximate said surface of each of said at least two wafer assemblies subsequent to said placing said at least two wafer assemblies in said furnace and prior to said introduction of said precursor. 38. The process of claim 33 wherein said increase of said temperature of said wafer assemblies comprises increasing said temperature to between about 300° C. and about 550° C. 39. A process used during the formation of a semiconductor device comprising: providing a plurality of semiconductor wafer assemblies, each semiconductor wafer assembly of said plurality comprising an array of emitter tips; placing said plurality of semiconductor wafer assemblies in a common location and, while said plurality of wafer assemblies are in said common location: heating said wafer assemblies to a temperature of between about 300° C. and about 550° C.; introducing at least one of ammonia and hydrazine proximate each said array of emitter tips of each of said plurality of wafer assemblies; introducing an aluminum nitride precursor proximate each said array of emitter tips of each of said plurality of wafer assemblies; and simultaneously forming a layer comprising aluminum nitride over said array of emitter tips on each of said plurality of semiconductor wafer assemblies. 40. The process of claim 39 wherein said introduction of said precursor comprises introducing a compound in the form R3Al. 41. The process of claim 40 wherein said introduction of said precursor introduces a compound comprising triethylaluminum. 42. The process of claim 41 further comprising: said introduction of said precursor further comprises introducing at least one of trimethylethylenediamine tris(dimethylamino)titanium, tetrakisdiethylaminotitanium, and tetrakisdimethylaminotitanium; and said formation of said layer comprising aluminum nitride comprises forming titanium aluminum nitride over said array of emitter tips on each of said plurality of semiconductor wafer assemblies. 43. A process used to form an electronic device having an array of emitter tips, said process comprising: providing at least two semiconductor wafer assemblies, each assembly comprising a semiconductor wafer and an array of emitter tips; placing said at least two wafer assemblies in a common location and, while said at least two wafer assemblies are in said common location: increasing a temperature of said wafer assemblies to a deposition temperature; introducing an aluminum nitride precursor proximate said emitter tip array of each of said at least two wafer assemblies; at about said deposition temperature, forming a layer comprising aluminum nitride from said aluminum nitride precursor over said array of emitter tips of each said at least two semiconductor wafer assemblies; and subsequent to said formation of said layer comprising aluminum nitride, annealing said layer at a temperature equal to or greater than said deposition temperature in an atmosphere comprising at least one of H2,N2,and NH3at a pressure of between about 200 millitorr and 25 atmospheres. 44. The process of claim 43 further comprising introducing a carbon-containing gas proximate said emitter tip array of each of said at least two wafer assemblies during said introduction of said aluminum nitride precursor. 45. The process of claim 44 wherein said introduction of said carbon-containing gas comprises introducing at least one of CH4,CO2,acetylene, and ethylene. 46. The process of claim 43 wherein said formation of said layer comprising aluminum nitride is a first deposition and forms a first layer comprising aluminum nitride layer and said annealing is a first anneal and said process further comprises, while said at least two wafer assemblies are in said common location: introducing an aluminum nitride precursor proximate said emitter tip array of said at least two wafer assemblies subsequent to said first anneal; at about said deposition temperature, forming a second layer comprising aluminum nitride from said aluminum nitride precursor over said array of emitter tips on each said wafer assembly; and subsequent to said formation of said second layer comprising aluminum nitride, annealing said first and second layers at a temperature equal to or greater than said deposition temperature in an atmosphere comprising at least one of H2,N2,and NH3at a pressure of between about 200 millitorr and 25 atmospheres. 47. The process of claim 46 wherein said formation of said second layer comprises forming said second layer such that it contacts said first layer. 48. The process of claim 44 further comprising introducing at least one of N2and argon proximate said emitter tip array of each of said at least two wafer assemblies prior to said introduction of said aluminum nitride precursor. 49. The method of claim 43 wherein said anneal comprise
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