초록 ▼

A ceramic substrate for a ceramic heater includes aluminum nitride, silicon nitride or silicon carbide as the main component for increasing mechanical strength and improving thermal shock resistance, and a proper additive for controlling thermal conductivity. A temperature gradient from a heating el

A ceramic substrate for a ceramic heater includes aluminum nitride, silicon nitride or silicon carbide as the main component for increasing mechanical strength and improving thermal shock resistance, and a proper additive for controlling thermal conductivity. A temperature gradient from a heating element to a power feeding electrode is reduced by providing a dimensional ratio of the substrate effective for preventing oxidation of a power feeding contact that contacts the electrode of the heating element formed on the surface of the ceramic substrate. The dimensional ratio A/B≥20 is satisfied, wherein A represents the distance from the contact between a circuit of the heating element and the electrode to an end of the ceramic substrate closer to the electrode, and B represents the thickness of the ceramic substrate. The thermal conductivity of the ceramic substrate is adjusted to 30 to 80 W/m·K.

대표청구항 ▼

A ceramic substrate for a ceramic heater includes aluminum nitride, silicon nitride or silicon carbide as the main component for increasing mechanical strength and improving thermal shock resistance, and a proper additive for controlling thermal conductivity. A temperature gradient from a heating el

A ceramic substrate for a ceramic heater includes aluminum nitride, silicon nitride or silicon carbide as the main component for increasing mechanical strength and improving thermal shock resistance, and a proper additive for controlling thermal conductivity. A temperature gradient from a heating element to a power feeding electrode is reduced by providing a dimensional ratio of the substrate effective for preventing oxidation of a power feeding contact that contacts the electrode of the heating element formed on the surface of the ceramic substrate. The dimensional ratio A/B≥20 is satisfied, wherein A represents the distance from the contact between a circuit of the heating element and the electrode to an end of the ceramic substrate closer to the electrode, and B represents the thickness of the ceramic substrate. The thermal conductivity of the ceramic substrate is adjusted to 30 to 80 W/m·K. ef bond-pad; and a support structure having a plurality of conductive members coupled to the die, the conductive members having a first end with a bond-site proximate to a corresponding bond-pad of the die, a second end with an external connector, and an elongated section connecting the bond-site to the external connector, the conductive members being arranged so that at least a portion of the bond-sites are arranged in a first row and spaced apart from one another by a first gap distance, and the conductive members including a first conductive member having a first bond-site coupled to the Vref bond-pad and a second conductive member having a second bond-site coupled to the signal bond-pad, the first bond-site of the first conductive member being spaced apart from the second bond-site of the second conductive member by a second distance greater than the first distance. 2. The microelectronic device assembly of claim 1 wherein the support structure is a lead frame comprising a perimeter frame section and the plurality of conductive members, wherein the plurality of conductive members are leads attached to the perimeter frame section proximate to the second ends of the conductive members. 3. The microelectronic device assembly of claim 1 wherein the support structure is an interposing substrate comprising a printed circuit sheet and the plurality of conductive members, the printed circuit sheet having an opening with a first side and a second side, and wherein the bond-sites of the conductive members are contact pads arranged along at least one of the first side or the second side of the opening through the sheet, the external connectors of the conductive members are solder ball-pads, and the elongated sections of the conductive members are conductive traces extending from the bond-sites to the ball-pads. 4. The microelectronic device assembly of claim 1, further comprising a shield between the first and second conductive members. 5. The microelectronic device assembly of claim 4 wherein the shield between the first and second conductive members comprises a conductive line coupled to a voltage potential. 6. The microelectronic device assembly of claim 4 wherein the shield between the first and second lines comprises a dielectric barrier. 7. A microelectronic device assembly, comprising: a microelectronic die having an integrated circuit and a plurality of bond-pads coupled to the integrated circuit, the bond-pads including a reference voltage (Vref) bond-pad and a signal bond-pad proximate to the Vref bond-pad; and a support structure having a plurality of conductive members coupled to the die, the conductive members including a first conductive member having a first elongated section and a first bond-site coupled to the Vref bond-pad by a first wire-bond line, a second conductive member having a second elongated section and a second bond-site coupled to the signal bond-pad by a second wire-bond line immediately adjacent to the first wire-bond line without an interposing wire-bond line from another bond-pad on the microelectronic die being between the first and second wire-bond lines, and a third conductive member having a third elongated section, wherein a portion of the first elongated section proximate to the first bond-site is immediately adjacent to and spaced apart from an adjacent portion of the third elongated section by a first distance, and wherein the portion of the first elongated section proximate to the first bond-site is spaced apart from a portion of the second elongated section proximate to the second bond-site by a second distance that is greater than the first distance. 8. The microelectronic device assembly of claim 7 wherein the support structure is a lead frame comprising a perimeter frame section and the plurality of conductive members, and wherein the plurality of conductive members are leads attached to the perimeter frame section proximate to the second ends of the conductive members. 9. The m icroelectronic device assembly of claim 7 wherein the support structure is an interposing substrate comprising a printed circuit sheet and the plurality of conductive members, the printed circuit sheet having an opening with a first side and a second side, the conductive members further comprising ball-pads coupled to individual elongated sections, and wherein the bond-sites of the conductive members are contact pads arranged along at least one of the first side or the second side of the opening through the sheet, and the elongated sections of the conductive members are conductive traces along the sheet extending from the bond-sites to the ball-pads. 10. The microelectronic device assembly of claim 7, further comprising a shield between the first and second conductive members. 11. The microelectronic device assembly of claim 10 wherein the shield between the first and second conductive members comprises the adjacent portion of the third elongated section that is adjacent to the portion of the first elongated section proximate to the first bond-site. 12. The microelectronic device assembly of claim 10 wherein the shield between the first and second lines comprises a dielectric barrier. 13. A microelectronic device assembly, comprising: a microelectronic die having an integrated circuit and a plurality of bond-pads coupled to the integrated circuit, the bond-pads including a reference voltage (Vref) bond-pad and a signal bond-pad proximate to the Vref bond-pad; a support structure having a plurality of conductive members coupled to the die, the conductive members having a first end with a bond-site proximate to a corresponding bond-pad of the die, a second end defining an external connector, and an elongated section connecting the bond-site to the external connector, the conductive members being arranged so that at least a portion of the bond-sites are arranged in a first row and spaced apart from one another by a first gap width, and the conductive members including a first conductive member having a first bond-site and a second conductive member having a second bond-site, the first bond-site of the first conductive member being spaced apart from the second bond-site of the second conductive member by a second gap width greater than the first gap width; and a plurality of wire-bond lines including a first wire-bond line from the Vref bond-pad to the first bond-site of the first conductive member and a second wire-bond line from the signal bond-pad to the second bond-site of the second conductive member, the first and second wire-bond lines being immediately adjacent to one another without an interposing wire-bond line from another bond-pad on the microelectronic die being between the first and second wire-bond lines. 14. The microelectronic device assembly of claim 13 wherein the support structure is a lead frame comprising a perimeter frame section and the plurality of conductive members, wherein the plurality of conductive members are leads attached to the perimeter frame section proximate to the second ends of the conductive members. 15. The microelectronic device assembly of claim 13 wherein the support structure is an interposing substrate comprising a printed circuit sheet and the plurality of conductive members, the printed circuit sheet having an opening with a first side and a second side, and wherein the bond-sites of the conductive members are contact pads arranged along at least one of the first side or the second side of the opening through the sheet, the external connectors of the conductive members are solder ball-pads, and the elongated sections of the conductive members are conductive traces extending from the bond-sites to the ball-pads. 16. The microelectronic device assembly of claim 13, further comprising a shield between the first and second conductive members. 17. The microelectronic device assembly of claim 16 wherein the shield between the first and second conductive members comprises a conductiv