Apparatus for maintaining wafer back side and edge exclusion during supercritical fluid processing
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
B08B-006/00
C25F-001/00
출원번호
US-0011499
(2001-12-07)
발명자
/ 주소
Gopinath, Sanjay
Van Cleemput, Patrick A.
Juarez, Francisco
Shrinivasan, Krishnan
출원인 / 주소
Novellus Systems, Inc.
대리인 / 주소
Beyer Weaver & Thomas, LLP
인용정보
피인용 횟수 :
42인용 특허 :
2
초록▼
The present invention pertains to apparatus and methods for maintaining wafer back side, bevel, and front side edge exclusion during supercritical fluid processing. Apparatus of the invention include a pedestal and an exclusion ring. When the exclusion ring is engaged with the pedestal a channel is
The present invention pertains to apparatus and methods for maintaining wafer back side, bevel, and front side edge exclusion during supercritical fluid processing. Apparatus of the invention include a pedestal and an exclusion ring. When the exclusion ring is engaged with the pedestal a channel is formed. A reactant-free supercritical fluid is passed through the channel and over a circumferential front edge of a wafer. The flow of reactant-free supercritical fluid protects the bevel and circumferential front edge of the wafer from exposure to reactants in a supercritical processing medium. The back side of the wafer is protected by contact with the pedestal and the flow of reactant-free supercritical fluid. Exclusion rings of the invention, when engaged with their corresponding pedestals make no or very little physical contact with the wafer front side.
대표청구항▼
The present invention pertains to apparatus and methods for maintaining wafer back side, bevel, and front side edge exclusion during supercritical fluid processing. Apparatus of the invention include a pedestal and an exclusion ring. When the exclusion ring is engaged with the pedestal a channel is
The present invention pertains to apparatus and methods for maintaining wafer back side, bevel, and front side edge exclusion during supercritical fluid processing. Apparatus of the invention include a pedestal and an exclusion ring. When the exclusion ring is engaged with the pedestal a channel is formed. A reactant-free supercritical fluid is passed through the channel and over a circumferential front edge of a wafer. The flow of reactant-free supercritical fluid protects the bevel and circumferential front edge of the wafer from exposure to reactants in a supercritical processing medium. The back side of the wafer is protected by contact with the pedestal and the flow of reactant-free supercritical fluid. Exclusion rings of the invention, when engaged with their corresponding pedestals make no or very little physical contact with the wafer front side. -4793339, 19881200, Matsumoto et al., 128/200.16; US-4796807, 19890100, Bendig et al., 239/102.2; US-4799622, 19890100, Ishikawa et al., 239/102.2; US-4826759, 19890500, Guire; US-4828886, 19890500, Hieber, 427/422; US-4850534, 19890700, Takahashi et al., 239/102.2; US-4865006, 19890900, Nogi et al., 123/590; US-4877989, 19891000, Drews et al., 310/323; US-4888516, 19891200, Daeges et al., 310/323; US-4968299, 19901100, Ahlstrand et al.; US-4973493, 19901100, Guire; US-4976259, 19901200, Higson et al.; US-4979959, 19901200, Guire; US-4994043, 19910200, Ysebaert; US-5002582, 19910300, Guire et al.; US-5021701, 19910600, Takahashi et al., 310/345; US-5063396, 19911100, Shiokawa et al., 346/140.R; US-5063922, 19911100, Hakkinen, 128/200.16; US-5073484, 19911200, Swanson et al.; US-5076266, 19911200, Babaev, 128/200.36; US-5080649, 19920100, Vetter; US-5086785, 19920200, Gentile et al.; US-5115803, 19920500, Sioutas, 128/200.23; US-5134993, 19920800, van der Linden et al., 128/200.14; US-5139016, 19920800, Waser, 128/200.16; US-5140740,
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이 특허에 인용된 특허 (2)
van de Ven Everhardus P. ; Broadbent Eliot K. ; Benzing Jeffrey C. ; Chin Barry L. ; Burkhart Christopher W., Gas-based substrate deposition protection.
Gopinath, Sanjay; Van Cleemput, Patrick A.; Schulberg, Michelle; Ramanathan, Sasangan; Juarez, Francisco; Joyce, Patrick, Method and apparatus for introduction of solid precursors and reactants into a supercritical fluid reactor.
Gale,Glenn; Hillman,Joseph T.; Jacobson,Gunilla; Palmer,Bentley, System and method for processing a substrate using supercritical carbon dioxide processing.
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