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A method of forming thick titanium nitride films with low resistivity. Using a thermal chemical vapor deposition reaction between ammonia (NH3) and titanium tetrachloride (TiCl4), a titanium nitride film is formed at a temperature of less than about 600° C., and an NH3:TiCl4ratio greater than about

A method of forming thick titanium nitride films with low resistivity. Using a thermal chemical vapor deposition reaction between ammonia (NH3) and titanium tetrachloride (TiCl4), a titanium nitride film is formed at a temperature of less than about 600° C., and an NH3:TiCl4ratio greater than about 5. The deposited TiN film is then treated in a hydrogen-containing plasma such as that generated from molecular hydrogen (H2). This results in a thick titanium nitride film with low resistivity and good step coverage. The deposition and plasma treatment steps may be repeated for additional cycles to form a thick, composite titanium nitride film of desired thickness, which is suitable for use in plug fill or capacitor structure applications.

대표청구항 ▼

A method of forming thick titanium nitride films with low resistivity. Using a thermal chemical vapor deposition reaction between ammonia (NH3) and titanium tetrachloride (TiCl4), a titanium nitride film is formed at a temperature of less than about 600° C., and an NH3:TiCl4ratio greater than about

A method of forming thick titanium nitride films with low resistivity. Using a thermal chemical vapor deposition reaction between ammonia (NH3) and titanium tetrachloride (TiCl4), a titanium nitride film is formed at a temperature of less than about 600° C., and an NH3:TiCl4ratio greater than about 5. The deposited TiN film is then treated in a hydrogen-containing plasma such as that generated from molecular hydrogen (H2). This results in a thick titanium nitride film with low resistivity and good step coverage. The deposition and plasma treatment steps may be repeated for additional cycles to form a thick, composite titanium nitride film of desired thickness, which is suitable for use in plug fill or capacitor structure applications. 525372, 19960600, Sayles; US-5665464, 19970900, Takayasu et al., 428/304.4; US-5756160, 19980500, Pratt; US-5952100, 19990900, Corman et al.; US-5962103, 19991000, Luthra et al.; US-6110535, 20000800, Rey et al., 427/249.2