초록 ▼

The invention includes a method of forming a heat treated sputtering target assembly. A backing plate is diffusion bonded to a sputtering target to produce a sputtering target assembly. The sputtering target assembly is heat treated to precipitation harden the backing plate of the assembly. The heat

The invention includes a method of forming a heat treated sputtering target assembly. A backing plate is diffusion bonded to a sputtering target to produce a sputtering target assembly. The sputtering target assembly is heat treated to precipitation harden the backing plate of the assembly. The heat treatment includes heating and quenching, with the quenching being performed by immersing the backing plate in a quenchant without submerging the sputtering target.

대표청구항 ▼

1. A sputtering target assembly comprising a precipitation hardened backing plate diffusion bonded to a sputtering target having a coefficient of thermal expansion different from the backing plate, the assembly having a Ni-comprising material between the backing plate and the sputtering target. 2. A

1. A sputtering target assembly comprising a precipitation hardened backing plate diffusion bonded to a sputtering target having a coefficient of thermal expansion different from the backing plate, the assembly having a Ni-comprising material between the backing plate and the sputtering target. 2. A sputtering target assembly according to claim 1 wherein the backing plate comprises a heat treatable alloy of titanium, aluminum, or copper. 3. A sputtering target assembly according to claim 1 wherein the backing plate comprises an aluminum alloy of the 2000, 6000, or 7000 series. 4. A sputtering target assembly according to claim 1 wherein the sputtering target comprises aluminum, tungsten, nickel, titanium, titanium-tungsten, tantalum, cobalt, or alloys thereof. 5. A sputtering target assembly according to claim 1 wherein the sputtering target comprises a scrolled surface and the Ni-comprising material contacts the scrolled surface. 6. A sputtering target assembly according to claim 1 wherein the Ni-comprising material comprises plated Ni and is on the sputtering target. 7. A sputtering target assembly according to claim 1 wherein the Ni-comprising material comprises vacuum annealed Ni. 8. A sputtering target assembly comprising a precipitation hardened backing plate diffusion bonded to a sputtering target having a coefficient of thermal expansion different from the backing plate, the assembly having vacuum annealed Ni plated on the sputtering target between the backing plate and the sputtering target. 9. A sputtering target assembly comprising a precipitation hardened backing plate diffusion bonded to a sputtering target, the assembly having a Ni-comprising material between the backing plate and the sputtering target, wherein the backing plate comprises aluminum or an aluminum alloy and exhibits a hardened temper comprising O, T4, or T6. 10. A sputtering target assembly according to claim 9 wherein the backing plate exhibits a T6 temper. 11. A sputtering target assembly according to claim 9 wherein the backing plate consists of aluminum or an aluminum alloy.