Method for production of a thin film and a thin-film solar cell, in particular, on a carrier substrate
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-021/30
H01L-021/46
H01L-021/302
출원번호
US-0438072
(1999-11-10)
우선권정보
DE-0051968 (1998-11-11); DE-0036941 (1999-08-05)
발명자
/ 주소
Artmann, Hans
Frey, Wilhelm
Moellendorf, Manfred
출원인 / 주소
Robert Bosch GmbH
대리인 / 주소
Kenyon & Kenyon
인용정보
피인용 횟수 :
56인용 특허 :
6
초록▼
A method for producing a thin film on a carrier substrate. For this purpose, a buried sacrificial layer is initially produced in the interior of a parent body, the buried sacrificial layer separating a layer from a residual body remaining from the parent body. After that, the carrier substrate is at
A method for producing a thin film on a carrier substrate. For this purpose, a buried sacrificial layer is initially produced in the interior of a parent body, the buried sacrificial layer separating a layer from a residual body remaining from the parent body. After that, the carrier substrate is attached to the layer and the sacrificial layer is then removed. As a result, the thin film to be produced comes into being on the carrier substrate. The method is suitable for the production of electronic components or thin-film solar cells, the parent body being made up, for example, of monocrystalline silicon in which a sacrificial layer of porous silicon is produced.
대표청구항▼
A method for producing a thin film on a carrier substrate. For this purpose, a buried sacrificial layer is initially produced in the interior of a parent body, the buried sacrificial layer separating a layer from a residual body remaining from the parent body. After that, the carrier substrate is at
A method for producing a thin film on a carrier substrate. For this purpose, a buried sacrificial layer is initially produced in the interior of a parent body, the buried sacrificial layer separating a layer from a residual body remaining from the parent body. After that, the carrier substrate is attached to the layer and the sacrificial layer is then removed. As a result, the thin film to be produced comes into being on the carrier substrate. The method is suitable for the production of electronic components or thin-film solar cells, the parent body being made up, for example, of monocrystalline silicon in which a sacrificial layer of porous silicon is produced. ng a bottom layer formed on top of the conductive sublayer and each additional layer in the stack formed on a previous one of the layers in the stack including an undoped top silicon dioxide layer on top of the stack, with the doped silicon dioxide layers comprising BPSG layers, forming a mask over the stack with mask openings therethrough, etching the silicon dioxide layers through the mask openings to form capacitor-core-shaping cavities in the stack of silicon dioxide layers reaching down through the stack to the conductive sublayer at the bottom of the stack, differentially etching the silicon dioxide layers in the cavities with a combination of hydrogen fluoride vapor and water vapor forming undercut edges in the doped silicon dioxide layers with the undoped silicon dioxide layers having cantilevered ribs projecting from the stack into the cavities to complete the plurality of molds, depositing a thick conductive layer into the cavities to form monolithic, solid capacitor cores with counterpart cantilevered ribs with a complementary pattern to the plurality of molds and the capacitor cores having inner cavities and a top surface, each of the monolithic, solid capacitor cores being formed of a material selected from the group consisting of aluminum, copper, tungsten, and titanium nitride and each of the monolithic, solid capacitor cores having a thickness from 500 .ANG. to 1,000 .ANG., polishing away the undoped top silicon dioxide layer of the plurality of molds and the top surface of each of the monolithic, solid capacitor cores by a Chemical Mechanical Planarization (CMP) process which removes the top undoped layer of the plurality of molds and the top of each of the monolithic, solid capacitor cores providing a flat upper surface thereof with a rib located on top of each of the monolithic, solid capacitor cores, etching away the plurality of molds, and then, after etching away the plurality of molds, etching back the sub layer to separate the thin, monolithic capacitor cores from adjacent thin, monolithic capacitor cores exposing the planarizing glass insulating layer.
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이 특허에 인용된 특허 (6)
Levy Miguel ; Osgood ; Jr. Richard M., Crystal ion-slicing of single-crystal films.
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Moslehi, Mehrdad M.; Kramer, Karl-Josef; Wang, David Xuan-Qi; Kapur, Pawan; Nag, Somnath; Kamian, George D.; Ashjaee, Jay; Yonehara, Takao, Apparatus for forming porous silicon layers on at least two surfaces of a plurality of silicon templates.
Moslehi, Mehrdad M.; Wang, David Xuan-Qi; Kramer, Karl-Josef; Seutter, Sean M.; Tor, Sam Tone; Calcaterra, Anthony, Backplane reinforcement and interconnects for solar cells.
Fonash,Stephen J.; Nam,Wook Jun; Lee,Youngchul; Chang,Kyuhwan; Hayes,Daniel J.; Kalkan,A. Kaan; Bae,Sanghoon, Deposited thin films and their use in separation and sacrificial layer applications.
Moslehi, Mehrdad M.; Kramer, Karl-Josef; Wang, David Xuan-Qi; Kapur, Pawan; Nag, Somnath; Kamian, George D; Ashjaee, Jay; Yonehara, Takao, Double-sided reusable template for fabrication of semiconductor substrates for photovoltaic cell and microelectronics device manufacturing.
Moslehi, Mehrdad M.; Kramer, Karl-Josef; Ashjaee, Jay; Kamian, George D.; Mordo, David; Yonehara, Takao, High productivity deposition reactor comprising a gas flow chamber having a tapered gas flow space.
Parikh, Suketu; Ozguven, Nevran; Harwood, Duncan; Moslehi, Mehrdad M., Integrated three-dimensional and planar metallization structure for thin film solar cells.
Ito, Atsuo; Akiyama, Shoji; Kawai, Makoto; Tanaka, Kouichi; Tobisaka, Yuuji; Kubota, Yoshihiro, Method for manufacturing single crystal silicon solar cell and single crystal silicon solar cell.
Ito, Atsuo; Akiyama, Shoji; Furuya, Masahiro; Kawai, Makoto; Tanaka, Koichi; Kubota, Yoshihiro; Tobisaka, Yuuji, Method for producing single crystal silicon solar cell and single crystal silicon solar cell.
Ito, Atsuo; Akiyama, Shoji; Kawai, Makoto; Tanaka, Koichi; Tobisaka, Yuuji; Kubota, Yoshihiro, Method for producing single crystal silicon solar cell and single crystal silicon solar cell.
Ito, Atsuo; Akiyama, Shoji; Kawai, Makoto; Tanaka, Koichi; Tobisaka, Yuuji; Kubota, Yoshihiro, Method for producing single crystal silicon solar cell and single crystal silicon solar cell.
Ito, Atsuo; Akiyama, Shoji; Kawai, Makoto; Tanaka, Koichi; Tobisaka, Yuuji; Kubota, Yoshihiro, Method for producing single crystal silicon solar cell and single crystal silicon solar cell.
Moslehi, Mehrdad M.; Wang, David Xuan-Qi; Tor, Sam Tone; Kramer, Karl-Josef, Method for releasing a thin semiconductor substrate from a reusable template.
Ito, Atsuo; Akiyama, Shoji; Kawai, Makoto; Tanaka, Koichi; Tobisaka, Yuuji; Kubota, Yoshihiro, Method of manufacturing single crystal silicon solar cell and single crystal silicon solar cell.
Ghyselen,Bruno; Aulnette,C챕cile; Osternaud,B챕n챕dite; Akatsu,Takeshi; Le Vaillant,Yves Mathieu, Recycling of a wafer comprising a multi-layer structure after taking-off a thin layer.
Moslehi, Mehrdad M.; Wang, David Xuan-Qi; Tor, Sam Tone; Kramer, Karl-Josef, Releasing apparatus for separating a semiconductor substrate from a semiconductor template.
Wang, David Xuan-Qi; Moslehi, Mehrdad M.; Kapur, Pawan; Parikh, Suketu, Structure and method for improving solar cell efficiency and mechanical strength.
Fonash,Stephen J.; Li,Handong; Lee,Youngchul; Cuiffi,Joseph D.; Hayes,Daniel J., Use of sacrificial layers in the manufacture of high performance systems on tailored substrates.
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