[특허]Siloxan polymer film on semiconductor substrate

[미국특허] Siloxan polymer film on semiconductor substrate 원문보기

IPC분류정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	H01L-023/58
출원번호	US-0133419 (2002-04-25)
우선권정보	JP-0037929 (1998-02-05)
발명자 / 주소	Matsuki, Nobuo Sik, Lee Jea Morisada, Yoshinori Takahashi, Satoshi
출원인 / 주소	ASM Japan K.K.
대리인 / 주소	Knobbe, Martens Olson & Bear, LLP
인용정보	피인용 횟수 : 44 인용 특허 : 10

초록 ▼

A siloxan polymer insulation film has a dielectric constant of 3.1 or lower and has --SiR2O-- repeating structural units with a C atom concentration of 20% or less. The siloxan polymer also has high thermal stability and high humidity-resistance. The siloxan polymer is formed by directly vaporizing a silicon-containing hydrocarbon compound of the formula SiαOα-1R2α-β+2(OCnH2n+1)βwherein α is an integer of 1-3, β is 2, n is an integer of 1-3, and R is C1-6hydrocarbon attached to Si, and then introducing the vaporized compound with an oxidizing agent to the reaction chamber of the plasma CVD apparatus. The residence time of the source gas is lengthened by reducing the total flow of the reaction gas, in such a way as to form a siloxan polymer film having a micropore porous structure with low dielectric constant.

대표청구항 ▼

1. A siloxan polymer insulation film formed on a semiconductor substrate, obtainable by a method comprising the steps of: vaporizing a silicon-containing hydrocarbon compound to produce a material gas for siloxan polymer, said silicon-containing hydrocarbon having the formula SiαOα-1R2α-β+2(OCnH2n+1)βwherein α is an integer of 1-3, β is 2, n in an integer of 1-3, and R is C1-6hydrocarbon attached to Si; introducing the material gas into a reaction chamber for plasma CVD processing wherein a semiconductor substrate is placed; introducing an additive gas comprising an inert gas and an oxidizing gas, said oxidizing gas being used in an amount less than the material gas; and forming a siloxan polymer film having --SiR2O-- repeating structural units on the semiconductor substrate by activating plasma polymerization reaction in the reaction chamber, which siloxan polymer has a dielectric constant of 3.1 or lower and which has --SiR2O-- repeating structural units and has a C atom concentration of 20% or less formed by plasma polymerization reaction from a silicon-containing hydrocarbon having the formula SiαOα-1R2α-β+2(OCnH2n+1)βwherein α is an integer of 1-3, β is 2, n is an integer of 1-3, and R is C1-6hydrocarbon attached to Si. 2. The siloxan polymer insulation film according to claim 1, which has a dielectric constant of 2.7 or less. 3. The siloxan polymer insulation film according to claim 1, wherein said R in the repeating structural unit is C1hydrocarbon.

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IPC	Description
A	생활필수품
A62	인명구조; 소방(사다리 E06C)
A62B	인명구조용의 기구, 장치 또는 방법(특히 의료용에 사용되는 밸브 A61M 39/00; 특히 물에서 쓰이는 인명구조 장치 또는 방법 B63C 9/00; 잠수장비 B63C 11/00; 특히 항공기에 쓰는 것, 예. 낙하산, 투출좌석 B64D; 특히 광산에서 쓰이는 구조장치 E21F 11/00)
A62B-1/08	.. 윈치 또는 풀리에 제동기구가 있는 것

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[미국특허] Siloxan polymer film on semiconductor substrate 원문보기