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A barrier layer structure and a method of forming the structure. The barrier layer structure comprises a bilayer, with a first layer formed by chemical vapor deposition and a second layer formed by physical vapor deposition. The first barrier layer comprises a metal or a metal nitride and the second

A barrier layer structure and a method of forming the structure. The barrier layer structure comprises a bilayer, with a first layer formed by chemical vapor deposition and a second layer formed by physical vapor deposition. The first barrier layer comprises a metal or a metal nitride and the second barrier layer comprises a metal or a metal nitride. The barrier bilayer is applicable to copper metallization.

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1. A method of copper metallization, comprising: depositing a refectory metal barrier layer by chemical vapor deposition; depositing a refractory metal nitride barrier layer by physical vapor deposition on the refectory metal barrier layer; depositing a copper seed layer by physical vapor depos

1. A method of copper metallization, comprising: depositing a refectory metal barrier layer by chemical vapor deposition; depositing a refractory metal nitride barrier layer by physical vapor deposition on the refectory metal barrier layer; depositing a copper seed layer by physical vapor deposition on the refractory metal nitride barrier layer; and then depositing a copper layer on the copper seed layer at conditions sufficient to form a (111) crystalline orientation. 2. The method of claim 1, wherein the refectory metal barrier layer comprises one or more metals selected from the group consisting of titanium, tantalum and tungsten. 3. The method of claim 1, wherein the refectory metal barrier layer has a thickness between about 25 .ANG. and about 100 .ANG.. 4. The method of claim 1, wherein the refractory metal nitride barrier layer comprises a metal selected from the group consisting of tantalum, titanium and tungsten. 5. The method of claim 1, wherein the refractory metal nitride barrier layer is tantalum nitride, titanium nitride, tungsten nitride, titanium silicon nitride, or tantalum silicon nitride. 6. The method of claim 1, wherein the refractory metal nitride barrier layer has a thickness between about 25 .ANG. and about 300 .ANG.. 7. The method of claim 1, wherein the copper seed layer is deposited at conditions sufficient to form a (111) crystalline orientation. 8. A method of copper metallization, comprising: depositing a refectory metal barrier layer by chemical vapor deposition; depositing a refractory metal nitride barrier layer by physical vapor deposition on the refectory metal barrier layer, depositing a copper seed layer by physical vapor deposition on the refractory metal nitride barrier layer at conditions sufficient to form a (111) crystalline orientation; and then depositing a copper layer on the copper seed at conditions sufficient to form a (111) crystalline orientation.