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An electronic device system having a removable processor and a removable modular thermal unit. The electronic device enabling a first modular thermal and processor installed within the electronic device to be replaced by a second modular thermal unit and processor. The second processor producing a d

An electronic device system having a removable processor and a removable modular thermal unit. The electronic device enabling a first modular thermal and processor installed within the electronic device to be replaced by a second modular thermal unit and processor. The second processor producing a different amount of heat than the first processor and the second modular thermal unit providing a different amount of cooling than the first modular thermal unit.

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An electronic device system having a removable processor and a removable modular thermal unit. The electronic device enabling a first modular thermal and processor installed within the electronic device to be replaced by a second modular thermal unit and processor. The second processor producing a d

An electronic device system having a removable processor and a removable modular thermal unit. The electronic device enabling a first modular thermal and processor installed within the electronic device to be replaced by a second modular thermal unit and processor. The second processor producing a different amount of heat than the first processor and the second modular thermal unit providing a different amount of cooling than the first modular thermal unit. Ru adjacent to the bottom ferromagnetic layer; a first sublayer of ferromagnetic CoCr, CoCrB or CoPtCrB adjacent to the coupling/spacer layer, the first sublayer having a first thickness and a first moment; and a second sublayer of ferromagnetic CoPtCrB with a second moment and a second thickness with the second moment being lower than the first moment and the second thickness being greater than the first thickness, and the first and second sublayers being antiferromagnetically coupled to the bottom ferromagnetic layer. 12. A method of fabricating a magnetic thin film storage medium comprising the steps of: depositing an underlayer of a chromium alloy; depositing a bottom ferromagnetic layer of a cobalt alloy on the underlayer; depositing a nonmagnetic coupling/spacer layer on the bottom ferromagnetic layer; depositing a first sublayer of ferromagnetic CoCrB or CoPtCrB on the coupling/spacer layer, the first sublayer having a first thickness and a first moment; and depositing a second sublayer of ferromagnetic material with a second moment and a second thickness with the second moment being lower than the first moment and the second thickness being greater than the first thickness, and the first and second sublayers of ferromagnetic material being antiferromagnetically coupled to the bottom ferromagnetic layer. 13. The method of claim 12 wherein the second sublayer of ferromagnetic material comprises CoPtCrB. 14. The method claim 12 further comprising the step of depositing a seed layer of RuAl deposited prior to the step of depositing the underlayer and wherein the underlayer is deposited on the seed layer. 15. The method of claim 14 further comprising the step of depositing a pre-seed layer of CrTi, CrTa or AlTi prior to the seed layer and wherein the seed layer is deposited on the pre-seed layer. 16. The method of claim 12 wherein the bottom magnetic layer is CoCr. 17. The method of claim 16 wherein the nonmagnetic coupling/spacer layer is ruthenium. 18. The method of claim 17 wherein the second sublayer of ferromagnetic material includes CoPtCrB. 19. A disk drive comprising: a magnetic transducer including a read and a write head; a spindle; and a magnetic thin film disk mounted on the spindle, the magnetic thin film disk including: a bottom ferromagnetic layer deposited on the underlayer; a nonmagnetic coupling/spacer layer adjacent to the bottom ferromagnetic layer; a first sublayer of ferromagnetic CoCrB or CoPtCrB adjacent to the coupling/spacer layer, the first sublayer having a first thickness and a first moment; and a second sublayer of ferromagnetic material with a second moment and a second thickness with the second moment being lower than the first moment and the second thickness being greater than the first thickness, and the first and second sublayers being antiferromagnetically coupled to the bottom ferromagnetic layer. 20. The disk drive of claim 19 wherein the bottom ferromagnetic layer is CoCr. 21. The disk drive of claim 19 wherein the second sublayer is CoPtCrB. 22. The disk drive of claim 19 wherein the magnetic thin film disk further comprises a seed layer of RuAl under the underlayer. 23. The disk drive of claim 22 wherein the magnetic thin film disk further comprises a pre-seed layer of CrTi under the seed layer.