[미국특허]
Wet-formed composite defining latent voids and macro-cavities
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
D21F-011/00
D21H-011/00
D21H-015/04
D21H-021/22
출원번호
US-0643803
(2000-08-22)
발명자
/ 주소
Wallajapet, Palani Raj Ramaswami
Edens, Ronald Lee
Mocadlo, Cheryl Ann
Hu, Sheng-Hsin
Yavich, Dmitry
Kale, David Michael
출원인 / 주소
Kimberly-Clark Worldwide, Inc.
대리인 / 주소
Pauley Petersen Kinne & Erickson
인용정보
피인용 횟수 :
3인용 특허 :
54
초록▼
A wet-formed composite defining latent voids and macro-cavities, the wet-formed composite having a basis weight greater than about 100 grams per square meter and a density of about 0.06 grams per cubic centimeter or more. The wet-formed composite comprises fibers and superabsorbent material, with th
A wet-formed composite defining latent voids and macro-cavities, the wet-formed composite having a basis weight greater than about 100 grams per square meter and a density of about 0.06 grams per cubic centimeter or more. The wet-formed composite comprises fibers and superabsorbent material, with the superabsorbent material present in an amount of about 10 dry weight percent or less, specifically about 5 dry weight percent or less, and particularly about 2 dry weight percent or less, but more than 0, based on the total dry weight of fibers and superabsorbent material present in the wet-formed composite. By virtue of the superabsorbent material having been allowed to swell and then shrink during the making of the wet-formed composite, macro-cavities are created. Densification compresses the macro-cavities. The resulting composite expands upon wetting and exhibits good absorbency properties.
대표청구항▼
A wet-formed composite defining latent voids and macro-cavities, the wet-formed composite having a basis weight greater than about 100 grams per square meter and a density of about 0.06 grams per cubic centimeter or more. The wet-formed composite comprises fibers and superabsorbent material, with th
A wet-formed composite defining latent voids and macro-cavities, the wet-formed composite having a basis weight greater than about 100 grams per square meter and a density of about 0.06 grams per cubic centimeter or more. The wet-formed composite comprises fibers and superabsorbent material, with the superabsorbent material present in an amount of about 10 dry weight percent or less, specifically about 5 dry weight percent or less, and particularly about 2 dry weight percent or less, but more than 0, based on the total dry weight of fibers and superabsorbent material present in the wet-formed composite. By virtue of the superabsorbent material having been allowed to swell and then shrink during the making of the wet-formed composite, macro-cavities are created. Densification compresses the macro-cavities. The resulting composite expands upon wetting and exhibits good absorbency properties. ication of the helicon source to plasma processing," J. Vac. Sci. Technol., vol. 9, No. 2, Mar./Apr. 1991, pp. 310-317. Samukawa, S., and Ohtake, H., "Pulse-time Modulated Plasma Etching for Precise ULSI Patterning," Abstract No. 162, Microelectrics Research Laboratories, NEC Corporation, Japan, May 1996, pp. 217-218. Shibano, T., Fujiwara, N., Hirayama, M., Nagata, H., and Demizu, K., "Etching of Si02by low energy CF+x and F+ions," Appl. Phys. Lett., vol. 63, No. 17, Oct. 25, 1993, pp. 2336-2338. Suagi, H., and Nakamura, K., "Diagnostics and control of radicals in an inductively coupled etching reactor," J. Vac. Sci. Technol., vol. 13, No. 3, May/Jun. 1995, pp. 8878-893. Tynan, GR., Bailey III, A.D., Campbell, G.A., Charatan, R., de Chambrier, A., Gibson, G., Hemker, D.J., Jones, K., Kuthi, A., Lee, C., and Wilcoxson, M., "Characterization of an Azimuthally Symmetric Helicon Wave High Density Plasma Source," Trikon Technologies, Inc., Japan, Jul. 1997. European Patent Office Communication Pursuant to Article 96(2) and Rule 51(2) EPC for Application No. 94307307.2-2208, mailed Jan., 1996. Patent Abstracts of Japan, Publication No. 410079372 A, Mar. 24, 1998 (Matsushita Electric Ind Co Ltd). Patent Abstracts of Japan, Publication No. 11026433, Jan. 29, 1999 (Matsushita Electron Corp). Patent Abstracts of Japan, Publication No. 57045927 A, Mar. 16, 1982 (Fujitsu Ltd). Patent Abstracts of Japan, Publication No. 620562714 A, Mar. 7, 1987 (Olympus Optical Co. Ltd; Toagosei Chem Ind Co Ltd). Patent Abstracts of Japan, Publication No. 06196446 A, Jul. 15, 1994 (NEC Corp). Patent Abstracts of Japan, Publication No. 07288196 A, Oct. 31, 1995 (Tokyo Electron Ltd). Patent Abstracts of Japan, Publication No. 08017799 A, Jan. 19, 1996 (Plasma Syst: KK).
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