Apparatus and method of thermal processing and method of pattern formation
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
G03F-007/16
G03F-007/30
G03F-007/38
B05C-011/00
B05C-011/02
출원번호
US-0017450
(2001-12-18)
우선권정보
JP-0385187 (2000-12-19)
발명자
/ 주소
Shinya, Hiroshi
Mizumoto, Kazuyoshi
Hayashida, Kazuhisa
Sekimoto, Eiichi
출원인 / 주소
Tokyo Electron Limited
대리인 / 주소
Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
인용정보
피인용 횟수 :
14인용 특허 :
1
초록▼
A substrate coated with a coating solution is placed on a heating plate in a processing chamber in which an inert gas is circulating. The substrate is heated on the heating plate while the inert gas is circulating at an extremely small first circulating amount. The substrate is heated further on the
A substrate coated with a coating solution is placed on a heating plate in a processing chamber in which an inert gas is circulating. The substrate is heated on the heating plate while the inert gas is circulating at an extremely small first circulating amount. The substrate is heated further on the heating plate while the inert gas is circulating at a second circulating amount larger than the first circulating amount. Detected is the density of the solvent in the processing chamber. The supply and exhaust amounts of the inert gas are controlled based on the density detected after the start of heating, so that an exhaust amount of the inert gas becomes a predetermined amount for a predetermined period until the solvent density reaches a predetermined density. A necessary control process is performed so that the solvent density reaches the predetermined density when the solvent density has not reached or exceeded the predetermined density after the predetermined period has elapsed. The two-time thermal-process or solvent-density control promotes evaporation of the resist solvent while restricting scattering of a photo-oxidizing agent included in the resist from being promoted beyond the wafer surface, thus achieving coated-film uniformity for the thermal process.
대표청구항▼
A substrate coated with a coating solution is placed on a heating plate in a processing chamber in which an inert gas is circulating. The substrate is heated on the heating plate while the inert gas is circulating at an extremely small first circulating amount. The substrate is heated further on the
A substrate coated with a coating solution is placed on a heating plate in a processing chamber in which an inert gas is circulating. The substrate is heated on the heating plate while the inert gas is circulating at an extremely small first circulating amount. The substrate is heated further on the heating plate while the inert gas is circulating at a second circulating amount larger than the first circulating amount. Detected is the density of the solvent in the processing chamber. The supply and exhaust amounts of the inert gas are controlled based on the density detected after the start of heating, so that an exhaust amount of the inert gas becomes a predetermined amount for a predetermined period until the solvent density reaches a predetermined density. A necessary control process is performed so that the solvent density reaches the predetermined density when the solvent density has not reached or exceeded the predetermined density after the predetermined period has elapsed. The two-time thermal-process or solvent-density control promotes evaporation of the resist solvent while restricting scattering of a photo-oxidizing agent included in the resist from being promoted beyond the wafer surface, thus achieving coated-film uniformity for the thermal process. static charge is stabilized, by surface-treating the metallic-oxide fine powder, which is selected from the group consisting of silica, alumina and titanium oxide, using a silane coupling agent containing primary amino group shown by following formula 3, at least one of silane coupling agents containing amino group, chosen from the silane coupling agents containing amino group shown by following formula 4, and a hydrophobic agent: XnR(3-n) Si--(CH2)m-NH2 (formula 3) wherein X is a functional group which can be hydrolyzed, R is hydrogen groups or alkyl groups, n is an integer of 1 to 3, and m is an integer of 1 to 6 XnR(3-n) Si--(CH2)m-R1R2 (formula 4) wherein X and R are the same as above mentioned ones, R1 and R2 are hydrogen groups, alkyl groups, or aryl groups, and the part of said groups can be replaced by oxygen, nitrogen, or sulfur atom except the case of R1=R2=H, n is an integer from 1 to 3 and m is an integer from 1 to 6. 3. A surface-treated metallic-oxide fine powder according to claim 1, wherein said powder has the tribo-electro static charge which satisfies at least one of the relational expressions shown by above-mentioned formula 1 or 2, by surface-treating said metallic-oxide fine powder, using the silane coupling agent containing primary amino group shown by above mentioned formula 3, at least one of silane coupling agents containing amino groups chosen from silane coupling agents containing amino groups shown by above-mentioned formula 4, and a hydrophobic agent. 4. A surface-treated metallic-oxide fine powder according to claim 2, wherein an addition of a silane coupling agent containing primary amino group of above-mentioned formula 3, is from 0.1 to 20% by weight, an addition of the silane coupling agent containing amino group of above-mentioned formula 4 is from 0.1 to 20% by weight, and an addition of a hydrophobic agent is from 5 to 50% by weight. 5. A surface-treated metallic-oxide fine powder according to claim 2, 3, or 4, wherein, a hydrophobic agent is an alkyl silazane compound, an alkyl alkoxy silane compound, a chloro-silane compound, a silicone varnish containing reactive functional groups, a non-reactive silicone varnish, a silicone oil containing reactive functional groups, or a non-reactive silicone oil, and the degree of hydrophobicity by a permeability method is 70% or more. 6. A surface-treated metallic-oxide fine powder according to claim 1 or 2, wherein, said metallic-oxide fine powder is a silica fine powder which is generated by the flame hydrolysis of a volatile silicon compound and is less than 400 m2/g by BET specific surface area. 7. A production method of a surface-treated metallic-oxide fine powder, wherein a silane coupling agent containing primary amino group shown by above-mentioned formula 3, a silane coupling agent containing amino group shown by above-mentioned formula 4, and a hydrophobic agent, are sprayed to the metallic-oxide fine powder selected from the group consisting of silica, alumina and titanium oxide and heated, or said metallic-oxide fine powder is heated after dipped in mixed solution of these agents. 8. A toner containing a surface-treated silica fine powder according to claim 1, 2 or 3. ing to claim 1 wherein the substrate comprises a field emission display substrate and the photosensitive material comprises photoresist. 5. A structure forming method comprising: providing a solution including photosensitive material and a plurality of masking particles; applying the solution over a substrate; agitating the plurality of the masking particles to settle the masking particles over the substrate; removing at least a portion of the photosensitive material while leaving the masking particles over the substrate; and processing the substrate using the masking particles as a mask. 6. The method according to claim 5 wherein the applying comprises screen printing the solution over the substrate. 7. The method according to claim 5 wherein the substrate comprises a field emission display substrate. 8. The method according to claim 5 wherein the substrate comprises a semiconductive substrate. 9. The method according to claim 5 wherein the method comprises an electronic device forming method. 10. The method according to claim 5 further comprising adhering the masking particles over the substrate using the photosensitive material. 11. The method according to claim 5 further comprising removing the masking particles following the processing. 12. The method according to claim 5 wherein the providing comprises providing a solution including photosensitive material comprising photoresist. 13. A structure forming method comprising: providing a solution including photosensitive material and a plurality of masking particles within the photosensitive material; screen printing a layer of the solution over a substrate; curing at least a portion of the photosensitive material screen printed over the substrate; removing cured photosensitive material while leaving the masking particles over the substrate; and processing the substrate using the masking particles as a mask. 14. The method according to claim 13 wherein the substrate comprises a field emission display substrate. 15. The method according to claim 13 wherein the substrate comprises a semiconductive substrate. 16. The method according to claim 13 further comprising adhering the masking particles over the substrate using the photosensitive material. 17. The method according to claim 13 further comprising removing the masking particles following the processing. 18. The method according to claim 13 wherein the providing comprises providing a solution including photosensitive material comprising photoresist. 19. The structure according to claim 1 wherein the substrate comprises a semiconductive substrate. 20. The structure according to claim 1 wherein substantially all of the masking particles contact the surface of the substrate. 21. The method according to claim 13 wherein the screen printing comprises physically contacting a screen with a squeegee to urge the masking particles through the screen. 22. The method according to claim 13 wherein the screen printing comprises offset printing. 23. The method according to claim 13 wherein the screen printing comprises contact printing.
Englhardt, Eric A.; Rice, Michael R.; Hudgens, Jeffrey C.; Hongkham, Steve; Pinson, Jay D.; Salek, Mohsen; Carlson, Charles; Weaver, William T; Armer, Helen R., Cartesian cluster tool configuration for lithography type processes.
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